Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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QSB363GR by Onsemi is a single phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and nominal light current of 1.5mA.
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SINGLE configuration makes it easier to integrate into various electronic circuits without requiring complex wiring.
Compact size allows for easy integration in small electronic devices or tight spaces.
Peak sensitivity at 940nm ensures accurate detection of light sources emitting within that wavelength range.
Phototransistors provide higher sensitivity and faster response times compared to traditional photodiodes, making them ideal for light detection applications.
High maximum operating temperature ensures reliable performance even in harsh environmental conditions.
Round shape allows for easy positioning and mounting within electronic circuits.
Low minimum operating temperature allows for use in cold environments without compromising performance.
Matte tin finish provides good solderability and ensures a secure connection during assembly.
High maximum power dissipation rating allows for reliable operation without the risk of overheating.
Nominal light current provides a stable output signal for accurate light detection.
Low dark current ensures minimal interference from background light sources, improving accuracy in light detection applications.
Infrared range compatibility makes this phototransistor suitable for applications involving IR light sources.
High breakdown voltage ensures durability and protection against voltage spikes in the circuit.
Surface mount capability simplifies the assembly process and allows for easy integration into PCB designs.
Phototransistors QSB363GR attributes and parameters. Explore more Phototransistors devices from Onsemi
Additional Features:
Minimum Collector-emitter Breakdown Voltage:
Configuration:
Maximum Dark Current:
Infrared (IR) Range:
JESD-609 Code:
Nominal Light Current:
Mounting Feature:
No. of Functions:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Peak Wavelength (nm):
Maximum Power Dissipation:
Shape:
Size:
Sub-Category:
Terminal Finish:
QSB363GR Optoelectronics trade compliance attributes, and parameters.
HTS
8541.40.70.80
SB
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LL4148
Hy Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
FDN5618P
Onsemi
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
LM78L05ACMX/NOPB
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
BAV99
Infinex
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
PIC18F4550-I/P
Microchip Technology
PIC18F4550-I/P by Microchip Technology is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring low power consumption and high-speed data processing. With 2048 RAM bytes and 256 Data EEPROM size, this CMOS technology-based microcontroller offers versatile performance in various embedded systems.
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
LM107H
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
MBR130T1G
MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.
BSS138
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;
1N4148
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;
2N2222A
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
BSS123,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
International Components
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;
1552200168
Molex
WIRE AND CABLE;
MBR0520L-T1
Won-top Electronics
MBR0520L-T1 by Won-top Electronics is a Schottky rectifier diode with 20V peak reverse voltage and 0.5A output current. It is a single-config, surface-mount diode in a small outline package, suitable for applications requiring high-speed switching and low forward voltage drop. Operating temperature range from -65°C to 125°C makes it ideal for various electronic circuits.
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
MMBT2907ALT1G
MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.
SMBJ18CA
World Products
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SFH320-3-Z
Osram Opto Semiconductors
Osram Opto Semiconductors SFH320-3-Z is a single phototransistor with peak wavelength of 980nm. It operates b/w -40 to 100°C, dissipating max 0.165W power. Ideal for applications requiring IR detection, it has a collector-emitter breakdown voltage of 35V and max on state current of 0.015A.
SFH300-3
Infineon Technologies
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Response Time: .00001 s; Peak Wavelength (nm): 850;
QSB363C
The Onsemi QSB363C is a 2mm phototransistor with peak wavelength of 940nm. It operates b/w -25 °C to 85°C, with max power dissipation of 0.075W. Ideal for IR applications, it has a min collector-emitter breakdown voltage of 30V and nominal light current of 1.5mA.
SD5410-002
Micro Switch
PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .15 W; Maximum Response Time: .000015 s; Maximum Dark Current: 250 nA;
KDT00030
The Onsemi KDT00030 is a single phototransistor with peak wavelength of 630nm. It operates b/w -40 °C to 85°C, with nominal light current of 0.01mA and max dark current of 100nA. Ideal for applications requiring rectangular shape optoelectronic components in compact size.
SFH325FA-4
SFH325FA-4 by Infineon Technologies is a single phototransistor with a peak wavelength of 900nm. It operates b/w -40 to 100°C, has a response time of 0.000008s, and can handle a max power dissipation of 0.165W. Ideal for applications requiring fast light detection in compact spaces.
SD3410-001
Honeywell Sensing And Control
PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 250 nA; Maximum Power Dissipation: .15 W; Minimum Operating Temperature: -55 Cel;
TPS601A(F)
Toshiba
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Additional Features: HIGH SENSITIVITY; Infrared (IR) Range: YES; Size: 4.7 mm;
SD5410-002 by Honeywell Sensing And Control is a PHOTO DARLINGTON phototransistor with a max operating temperature of 125°C and a min operating temperature of -55°C. It has a max power dissipation of 0.15W and a max dark current of 250nA. This through-hole mount component is commonly used in optoelectronic applications.
SFH3710-Z
The Osram Opto Semiconductors SFH3710-Z is a single phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, has a collector-emitter breakdown voltage of 5.5V, and nominal light current of 0.0025mA. Ideal for applications requiring precise light detection in compact spaces.
SFH310
SFH310 by Infineon Technologies is a phototransistor with peak wavelength of 780nm. It can operate b/w -55°C to 100°C, with max power dissipation of 0.165W and dark current of 5nA. Ideal for applications requiring fast response time (0.000007s) and on-state current up to 0.05A, featuring through-hole mounting.
LTR-4206E
Lite-on Technology
LTR-4206E by Lite-on Technology is a 3mm round phototransistor with high sensitivity. It operates b/w -40 °C to 85 °C and has a max power dissipation of 0.1 W. It has a nominal light current of 2 mA and a max dark current of 100 nA. This phototransistor is suitable for through-hole mounting applications.
SPS281C
SPS281C by Onsemi is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It has max power dissipation of 0.05W and response time of 0.00003s. Ideal for applications requiring optoelectronic sensing in temperatures ranging from -25 °C to 80°C.
SFH320-2
Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .000006 s; Minimum Operating Temperature: -55 Cel; Maximum Power Dissipation: .165 W; Maximum Dark Current: 200 nA;
SFH3201
Infineon's SFH3201 phototransistor operates in -55 to 100°C range with peak wavelength of 860nm. It has max power dissipation of 0.165W and response time of 0.000005s. Ideal for surface mount applications, it can handle max on-state current of 0.015A.
SFH320-4-Z
The Osram Opto Semiconductors SFH320-4-Z is a single phototransistor with peak wavelength of 980nm. It has a max operating temperature of 100°C and min operating temperature of -40°C. Ideal for applications requiring infrared detection, it features a nominal light current of 0.65mA and max power dissipation of 0.165W.
TPS611
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .05 A; Additional Features: HIGH SENSITIVITY; Maximum Dark Current: 100 nA; Configuration: SINGLE;
BPW17N
Telefunken Microelectronics
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Response Time: .0000016 s; Maximum Power Dissipation: .1 W;
ASDL-6770-C22
Broadcom
PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; Infrared (IR) Range: YES; Maximum Operating Temperature: 85 Cel; Shape: ROUND;
SPS181C
SPS181C by Onsemi is a phototransistor with peak wavelength of 880nm. It operates b/w -20 °C to 75°C, dissipating max power of 0.07W. With max on state current of 0.02A and dark current at 200nA, it's ideal for through hole mounting in various applications.
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QSB363ZR
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: MATTE TIN; No. of Functions: 1; Configuration: SINGLE; JESD-609 Code: e3;
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE; Maximum Dark Current: 100 nA;
QSB363.ZR
Qt Optoelectronics
QSB363.ZR by Qt Optoelectronics is a 1.9mm ROUND PHOTO TRANSISTOR with max operating temp of 85°C and min of -40°C. It has 0.7mA light current, 100nA dark current, and 30V breakdown voltage. Ideal for applications requiring precise light sensing in compact spaces.
QSB363
QSB363 by Onsemi is a single configuration phototransistor with a size of 1.9 mm. It operates at temperatures ranging from -25 to 85 °C and has a peak wavelength of 940 nm. It is commonly used in applications requiring infrared sensing or detection.
PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 880; Maximum Dark Current: 100 nA; Configuration: SINGLE;
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Shape: ROUND; Additional Features: DAY LIGHT FILTER; JESD-609 Code: e3;
QSB320F
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 100 Cel;
QSB320TR
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin (Sn); Maximum Power Dissipation: .165 W; Additional Features: HIGH SENSITIVITY; No. of Functions: 1;
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Infrared (IR) Range: YES; Minimum Operating Temperature: -25 Cel; No. of Functions: 1; Nominal Light Current: 1.5 mA;
QSB363YR
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: MATTE TIN; No. of Functions: 1; Maximum Power Dissipation: .075 W; Nominal Light Current: 1.5 mA;
QSB363C.YR
PHOTO TRANSISTOR; Nominal Light Current: 1.5 mA; Maximum Dark Current: 100 nA; Configuration: SINGLE; No. of Functions: 1; Size: 1.9 mm;
QSB363CGR
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Shape: ROUND; Maximum Operating Temperature: 85 Cel; Nominal Light Current: 1.5 mA;
QSB363CYR
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; Maximum Operating Temperature: 85 Cel; Nominal Light Current: 1.5 mA; Minimum Operating Temperature: -25 Cel;
QSB363CZR
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Dark Current: 100 nA; Nominal Light Current: 1.5 mA; Size: 1.9 mm;
QSB363GR
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 85 Cel; Size: 1.9 mm; Configuration: SINGLE;
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .075 W; Shape: ROUND; Minimum Operating Temperature: -25 Cel;
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