Loading...

1N5722

Texas Instruments

1N5722 by Texas Instruments

1N5722 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. Ideal for applications requiring fast response time and IR detection in through-hole mounting setups.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,224 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,224

-

-

-

-

Digiode

USA . 4,015 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,015

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,059 parts In-Stock

1+ parts

$0.073

100+ parts

-

1k+ parts

$1.443

10k+ parts

-

1,059

$0.073

-

$1.443

-

DigiPath Technology Company

USA . 626 parts In-Stock

1+ parts

$0.080

100+ parts

$0.074

1k+ parts

-

10k+ parts

-

626

$0.080

$0.074

-

-

ChromeModa Solutions

Germany . 2,556 parts In-Stock

1+ parts

$0.082

100+ parts

$0.067

1k+ parts

-

10k+ parts

-

2,556

$0.082

$0.067

-

-

IDEA Electronic Components Group

UK . 1,550 parts In-Stock

1+ parts

$0.082

100+ parts

-

1k+ parts

$0.074

10k+ parts

-

1,550

$0.082

-

$0.074

-

One Stop Electronics

USA . 1,232 parts In-Stock

1+ parts

$2.100

100+ parts

-

1k+ parts

-

10k+ parts

-

1,232

$2.100

-

-

-

AZTECH Wire

Italy . 670 parts In-Stock

1+ parts

$5.943

100+ parts

-

1k+ parts

-

10k+ parts

-

670

$5.943

-

-

-

Semicontronic

India . 699 parts In-Stock

1+ parts

$6.100

100+ parts

$5.948

1k+ parts

$5.917

10k+ parts

-

699

$6.100

$5.948

$5.917

-

Ampacity Inc.

Singapore . 1,600 parts In-Stock

1+ parts

$15.100

100+ parts

-

1k+ parts

-

10k+ parts

-

1,600

$15.100

-

-

-

Corphita

USA . 4,573 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,573

-

-

-

-

Northwest PG Solutions

USA . 624 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

624

-

-

-

-

Native Components

USA . 324 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

324

-

-

-

-

Corohmni

South Africa . 179 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

179

-

-

-

-

Overview

Experience the superior quality and reliability of Texas Instruments with the 1N5722 phototransistor. Perfect for a wide range of optoelectronic applications, this component offers unparalleled performance and durability. With a peak wavelength of 900nm and maximum operating temperature of 125°C, the 1N5722 delivers exceptional sensitivity and responsiveness. Trust in Texas Instruments for cutting-edge technology and innovation that exceeds expectations. Elevate your projects with the 1N5722 and unlock endless possibilities.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for simplified design and easy installation.

Peak Wavelength (nm): 900

Peak wavelength of 900nm is suitable for applications requiring detection in the infrared range.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor type offers high sensitivity to light, making it ideal for light sensing applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature of 125°C ensures reliable performance in harsh environments.

Shape: ROUND

Round shape allows for easy integration into various devices and applications.

Minimum Operating Temperature: -60 °C

Low minimum operating temperature of -60°C enables use in cold environments.

Maximum Power Dissipation: 0.05 W

Low power dissipation of 0.05W helps in energy efficiency and minimizes heat generation.

Nominal Light Current: 0.5 mA

Nominal light current of 0.5mA indicates high sensitivity to light sources.

Maximum Dark Current: 25 nA

Low maximum dark current of 25nA ensures accurate detection in low light conditions.

Infrared (IR) Range: YES

Infrared range capability makes it suitable for applications requiring detection of IR light sources.

Maximum Response Time: 0.0000015 s

Ultra-fast maximum response time of 0.0000015s ensures quick detection and response to light changes.

Minimum Collector-emitter Breakdown Voltage: 50 V

Minimum breakdown voltage of 50V provides protection against voltage spikes and overloads.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature allows for secure and stable mounting in various applications.

Technical Specifications

Phototransistors 1N5722 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

.5 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.0000015 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

1N5722 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 3