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1N5723

Texas Instruments

1N5723 by Texas Instruments

1N5723 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. Ideal for applications requiring fast response time and IR detection in through-hole mounting setups.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,747 parts In-Stock

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Digiode

USA . 57 parts In-Stock

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Ampacity Inc.

Singapore . 410 parts In-Stock

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$0.100

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410

$0.100

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Parana Technologies

USA . 78 parts In-Stock

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$0.593

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$1.676

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78

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DigiPath Technology Company

USA . 634 parts In-Stock

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$0.653

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$0.600

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634

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ChromeModa Solutions

Germany . 2,460 parts In-Stock

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$0.666

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$0.546

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IDEA Electronic Components Group

UK . 1,866 parts In-Stock

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$0.666

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$0.599

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$0.666

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Semicontronic

India . 1,054 parts In-Stock

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$5.100

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$4.972

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$4.947

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1,054

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AZTECH Wire

Italy . 398 parts In-Stock

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$11.501

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One Stop Electronics

USA . 1,141 parts In-Stock

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$18.100

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Corphita

USA . 2,260 parts In-Stock

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Northwest PG Solutions

USA . 422 parts In-Stock

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Corohmni

South Africa . 308 parts In-Stock

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Native Components

USA . 251 parts In-Stock

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Overview

Discover the power of Texas Instruments with the 1N5723 Phototransistor. With a peak wavelength of 900nm and a fast response time of 0.0000015s, this high-quality component is perfect for applications in sensors, light control, and more. Backed by Texas Instruments' reputation for excellence, this phototransistor offers reliable performance, superior quality, and exceptional value. Upgrade your projects with the 1N5723 and experience the difference that top-notch components can make.

Feature Benefit Bullets

Configuration: SINGLE

Having a single configuration makes it easy to integrate this phototransistor into a circuit with less hassle.

Peak Wavelength (nm): 900

The peak wavelength of 900 nm makes this phototransistor suitable for applications that require detection in the infrared spectrum.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor, this product provides high sensitivity to light, making it ideal for light sensing applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this phototransistor can withstand harsh environmental conditions without malfunctioning.

Shape: ROUND

The round shape allows for easy mounting and positioning in a circuit or device.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C ensures that this phototransistor can function effectively in cold environments.

Maximum Power Dissipation: 0.05 W

The low power dissipation of 0.05 W indicates that this phototransistor is energy efficient and will not overheat during operation.

Nominal Light Current: 2 mA

The high nominal light current of 2 mA means that this phototransistor can detect and respond to light signals effectively.

Maximum Dark Current: 25 nA

The low maximum dark current of 25 nA ensures that this phototransistor has a low noise level when detecting light in dark conditions.

Infrared (IR) Range: YES

Having an infrared range makes this phototransistor suitable for applications that require detection of infrared light.

Maximum Response Time: 0.0000015 s

The fast maximum response time of 0.0000015 seconds ensures that this phototransistor can quickly react to changes in light intensity.

Minimum Collector-emitter Breakdown Voltage: 50 V

The high minimum collector-emitter breakdown voltage of 50 V indicates that this phototransistor can withstand high voltage conditions without breakdown.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature makes it easy to securely mount this phototransistor on a circuit board for reliable performance.

Technical Specifications

Phototransistors 1N5723 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

2 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.0000015 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

1N5723 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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