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SFH3400

Infineon Technologies

SFH3400 by Infineon Technologies

Infineon's SFH3400 phototransistor operates in -40 to 85°C range with peak wavelength of 850nm. It has max power dissipation of 0.12W, response time of 0.014s, and on-state current of 0.05A. Ideal for surface mount applications requiring fast and precise light detection.

Median Price

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Lifecycle Status

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7

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1k+

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ComSIT Distribution GmbH

Germany . 9,091 parts In-Stock

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GES GmbH

Germany . 2,658 parts In-Stock

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EMSNET

USA . 1,025 parts In-Stock

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Prism Electronics

USA . 322 parts In-Stock

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Vyrian

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Digiode

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Nova Conductors

Japan . 100 parts In-Stock

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Modulus Dynamics

Lithuania . 3,674 parts In-Stock

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$0.417

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$0.400

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$0.384

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Ampacity Inc.

Singapore . 479 parts In-Stock

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$7.100

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AZTECH Wire

Italy . 772 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

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Bastille Electronics

Australia . 2,809 parts In-Stock

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Corphita

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Overview

Enhance your electronic designs with the SFH3400 phototransistor from Infineon Technologies. With a peak wavelength of 850nm and a maximum operating temperature of 85°C, this high-quality component offers reliability and precision in various applications. From light sensors to optical switches, the SFH3400 provides fast response times and low dark current for optimal performance. Trust in Infineon's expertise in semiconductor technology to deliver value and efficiency in your next project. Choose the SFH3400 for superior results and seamless integration.

Feature Benefit Bullets

Peak Wavelength (nm): 850

This specific peak wavelength allows for accurate and efficient light sensing in the near-infrared spectrum, making it suitable for various applications requiring this range of sensitivity.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this phototransistor can withstand extreme heat conditions without affecting its performance, ensuring reliability in various environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature capability enables this phototransistor to function even in extremely cold conditions, making it suitable for a wide range of temperature environments.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and ensures a reliable electrical connection, making integration into electronic circuits easier and more secure.

Maximum Power Dissipation: 0.12 W

With a high maximum power dissipation rating, this phototransistor can handle higher power levels without overheating, allowing for continuous and reliable operation.

Maximum Dark Current: 200 nA

The low maximum dark current helps in reducing noise and improving signal-to-noise ratio in low-light conditions, ensuring accurate and reliable light sensing performance.

Maximum Response Time: 0.014 s

The fast response time of this phototransistor enables quick detection and response to changes in light intensity, making it ideal for applications requiring rapid sensing capabilities.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation on PCBs, simplifying the assembly process and ensuring a compact and space-efficient design.

Maximum On State Current: 0.05 A

With a high maximum on-state current rating, this phototransistor can handle higher current loads, making it suitable for applications requiring higher output or driving capabilities.

Technical Specifications

Phototransistors SFH3400 attributes and parameters. Explore more Phototransistors devices from Infineon Technologies

Specs

Maximum Dark Current:

200 nA

JESD-609 Code:

e0

Mounting Feature:

Maximum On State Current:

.05 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Peak Wavelength (nm):

850

Maximum Power Dissipation:

.12 W

Maximum Response Time:

.014 s

Sub-Category:

Photo Transistors

Terminal Finish:

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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