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TIL416

Texas Instruments

TIL416 by Texas Instruments

TIL416 by Texas Instruments is a PHOTO DARLINGTON phototransistor with peak wavelength of 930nm. It operates b/w -40°C to 85°C, has max power dissipation of 0.05W, and response time of 0.001s. Ideal for through hole mounting applications requiring low dark current and on-state current of 100nA and 0.0001A respectively.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 3,425 parts In-Stock

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Vyrian

USA . 3,329 parts In-Stock

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Parana Technologies

USA . 1,263 parts In-Stock

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$0.065

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$1.439

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DigiPath Technology Company

USA . 358 parts In-Stock

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$0.072

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ChromeModa Solutions

Germany . 1,184 parts In-Stock

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$0.073

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$0.060

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IDEA Electronic Components Group

UK . 906 parts In-Stock

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$0.066

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Semicontronic

India . 1,497 parts In-Stock

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$1.072

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$1.067

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AZTECH Wire

Italy . 475 parts In-Stock

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$9.589

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One Stop Electronics

USA . 1,027 parts In-Stock

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Ampacity Inc.

Singapore . 1,412 parts In-Stock

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Corphita

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Corohmni

South Africa . 213 parts In-Stock

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Overview

Unleash the power of light sensing with the TIL416 phototransistor by Texas Instruments. With a peak wavelength of 930nm, this Photo Darlington optoelectronic component offers unmatched quality and reliability for your applications. From security systems to industrial automation, the TIL416 excels in detecting light changes accurately. Trust in Texas Instruments' renowned reputation for cutting-edge technology, and experience the value and benefits this product brings to your projects. Upgrade to the TIL416 today and see the difference for yourself.

Feature Benefit Bullets

Peak Wavelength (nm): 930

The peak wavelength of 930nm ensures high sensitivity to light in the infrared spectrum, making this phototransistor ideal for applications where infrared detection is required.

Optoelectronic Type: PHOTO DARLINGTON

The PHOTO DARLINGTON optoelectronic type offers high current transfer ratio and sensitivity, making this phototransistor suitable for low light detection applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this phototransistor can withstand high temperature environments, increasing its versatility for various applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows this phototransistor to function effectively in cold environments, ensuring reliable performance in a wide range of conditions.

Maximum Power Dissipation: 0.05 W

The low maximum power dissipation of 0.05W helps in preventing overheating and ensures the longevity of the phototransistor, making it a reliable choice for continuous operation.

Maximum Dark Current: 100 nA

With a low maximum dark current of 100nA, this phototransistor offers high signal-to-noise ratio, making it suitable for precision light sensing applications where accurate detection is crucial.

Maximum Response Time: 0.001 s

The fast maximum response time of 0.001s allows this phototransistor to quickly react to changes in light intensity, making it ideal for high-speed sensing applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount feature simplifies the installation process of this phototransistor, making it easy to integrate into existing circuit designs.

Maximum On State Current: 0.0001 A

The low maximum on-state current of 0.0001A reduces power consumption and heat generation, making this phototransistor energy-efficient and suitable for battery-operated devices.

Technical Specifications

Phototransistors TIL416 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

100 nA

Mounting Feature:

Maximum On State Current:

.0001 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

930

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.001 s

Sub-Category:

Photo Transistors

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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