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QSE213C

Fairchild Semiconductor

QSE213C by Fairchild Semiconductor

QSE213C by Fairchild Semiconductor is a single phototransistor with a peak wavelength of 880nm. It has a min operating temperature of -40°C and a max power dissipation of 0.1W. This optoelectronic component is commonly used in applications requiring infrared sensing or detection.

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$0.076

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Overview

Discover the QSE213C, a high-quality phototransistor by Fairchild Semiconductor. With its advanced optoelectronic technology and superior manufacturing, this single configuration device offers incredible value and benefits to customers. Its compact size of 1.52mm makes it perfect for various applications. Whether you need precise light detection or reliable infrared range capabilities, the QSE213C delivers exceptional performance. Trust Fairchild Semiconductor for excellence in phototransistors and experience the advantages of this remarkable product.

Feature Benefit Bullets

Configuration:

SINGLE - This phototransistor is designed for single configuration, making it suitable for applications that require individual sensing or detection.

Size:

1.52 mm - The compact size of this phototransistor allows for easy integration into small electronic devices or systems, providing flexibility in design and space-saving benefits.

No. of Functions:

1 - With a single function, this phototransistor simplifies circuitry and enhances efficiency by focusing on a specific optoelectronic application.

Peak Wavelength (nm):

880 - The peak wavelength of 880 nm makes this phototransistor ideal for applications requiring detection or sensing in the infrared range, such as remote control systems or proximity sensors.

Optoelectronic Type:

PHOTO TRANSISTOR - As a phototransistor, this product provides high sensitivity to light, enabling accurate and reliable detection of optical signals or ambient light levels.

Maximum Operating Temperature:

100 °C - With a maximum operating temperature of 100°C, this phototransistor offers durability and reliability even in high-temperature environments, widening its range of potential applications.

Shape:

ROUND - The round shape of this phototransistor allows for easy placement and alignment during assembly, ensuring precise optical detection and consistent performance.

Minimum Operating Temperature:

40 °C - The wide operating temperature range (-40°C to 100°C) of this phototransistor makes it suitable for various environments, including both extreme cold and hot conditions.

Maximum Power Dissipation:

0.1 W - The high maximum power dissipation capability of 0.1 W enables this phototransistor to handle larger light currents or sudden surges, making it reliable and robust in demanding applications.

Nominal Light Current:

0.2 mA - With a nominal light current of 0.2 mA, this phototransistor offers sensitivity to low-intensity light signals, ensuring accurate detection even in low-light conditions.

Maximum Dark Current:

100 nA - The low maximum dark current of 100 nA minimizes unwanted electrical output in the absence of light, enhancing the signal-to-noise ratio and improving overall accuracy.

Infrared (IR) Range:

YES - Equipped with infrared range capabilities, this phototransistor is suitable for applications that require detection or sensing of infrared light, such as remote sensing, communication, or security systems.

Minimum Collector-emitter Breakdown Voltage:

30 V - The high minimum collector-emitter breakdown voltage of 30 V ensures safe operation even in high-voltage applications, providing protection against potential electrical failures.

Mounting Feature:

THROUGH HOLE MOUNT - The through-hole mounting feature simplifies installation and allows for strong mechanical connections, providing stability and reliability in various electronic assemblies or circuit boards.

Technical Specifications

Phototransistors QSE213C attributes and parameters. Explore more Phototransistors devices from Fairchild Semiconductor

Specs

Additional Features:

DAYLIGHT FILTER, SIDE LOOKER

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

Nominal Light Current:

.2 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.1 W

Shape:

ROUND

Size:

1.52 mm

Sub-Category:

Photo Transistors

Trade Compliance

QSE213C Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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