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TEMT6000

Vishay Intertechnology

TEMT6000 by Vishay Intertechnology

Vishay Intertechnology's TEMT6000 is a phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, with max power dissipation of 0.1W and dark current of 50nA. Ideal for surface mount applications, it has a max on state current of 0.02A.

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Nova Conductors

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AZTECH Wire

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Overview

Experience the superior quality and reliability of Vishay Intertechnology's TEMT6000 Phototransistor. Perfect for a wide range of applications, this state-of-the-art component offers unparalleled performance in detecting light levels with peak wavelength at 570nm. With a maximum operating temperature of 85°C and a minimum of -40°C, this surface mount device is built to withstand even the harshest environments. Trust Vishay Intertechnology for cutting-edge technology that delivers precision and efficiency, making the TEMT6000 an essential choice for your next project.

Feature Benefit Bullets

Peak Wavelength (nm): 570

This specific peak wavelength allows for accurate detection and efficient performance in various applications.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor, this product offers high sensitivity to light, making it ideal for light detection and control circuits.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this phototransistor can withstand harsh environmental conditions without loss of functionality.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in extreme cold temperatures.

Terminal Finish: Tin (Sn)

The use of tin as the terminal finish provides excellent solderability and resistance to corrosion, enhancing the overall reliability of the product.

Maximum Power Dissipation: 0.1 W

With a maximum power dissipation of 0.1 W, this phototransistor can handle high power loads without overheating or damage.

Maximum Dark Current: 50 nA

The low dark current value ensures minimal leakage current in the absence of light, resulting in accurate light sensing capabilities.

Mounting Feature: SURFACE MOUNT

The surface mount design allows for easy and convenient installation on PCBs, saving space and simplifying the assembly process.

Maximum On State Current: 0.02 A

With a maximum on-state current of 0.02 A, this phototransistor can efficiently switch high currents, making it suitable for a wide range of applications.

Technical Specifications

Phototransistors TEMT6000 attributes and parameters. Explore more Phototransistors devices from Vishay Intertechnology

Specs

Maximum Dark Current:

50 nA

JESD-609 Code:

e3

Mounting Feature:

Maximum On State Current:

.02 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

570

Maximum Power Dissipation:

.1 W

Sub-Category:

Photo Transistors

Terminal Finish:

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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