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QSD123

Onsemi

QSD123 by Onsemi

The Onsemi QSD123 is a 5mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring fast response time and IR detection in through-hole mounting setups.

Median Price

$0.298

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 32 parts In-Stock

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$0.287

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$0.152

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$0.147

32

$0.287

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$0.147

Mouser Electronics

USA . 463 parts In-Stock

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$0.640

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$0.299

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$0.299

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DigiKey

USA . 1 parts In-Stock

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$0.700

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$0.274

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$0.228

1

$0.700

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$0.274

$0.228

Newark

USA . 2 parts In-Stock

1+ parts

$0.704

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$0.359

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$0.301

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$0.271

2

$0.704

$0.359

$0.301

$0.271

Chip1Stop

Japan . 8,750 parts In-Stock

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$0.268

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$0.232

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$0.209

8,750

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$0.268

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Avnet

USA . 1,500 parts In-Stock

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1,500

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Verical

USA . 500 parts In-Stock

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$0.310

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500

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$0.310

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Master Electronics

USA . 500 parts In-Stock

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$0.202

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$0.187

500

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$0.202

$0.187

RS (Exports)

UK . 100 parts In-Stock

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$0.253

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$0.234

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Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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$0.259

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50

$0.259

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TME

Poland . 576 parts In-Stock

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$0.450

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$0.261

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$0.205

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$0.194

576

$0.450

$0.261

$0.205

$0.194

Digiode

USA . 173 parts In-Stock

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$0.750

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$0.750

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NAC Semi

USA . 11,250 parts In-Stock

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$0.224

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PC Components Company LLC

USA . 5,000 parts In-Stock

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Bristol Electronics

USA . 5,000 parts In-Stock

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Vyrian

USA . 3,925 parts In-Stock

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IBS Electronics

USA . 500 parts In-Stock

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$0.283

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$0.262

500

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$0.283

$0.262

Standard Data Resources

USA . 31 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,794 parts In-Stock

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$0.125

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3,794

$0.125

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Corohmni

South Africa . 183 parts In-Stock

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$0.249

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$0.249

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Continental Prestige Electronics

USA . 6,792 parts In-Stock

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$0.259

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$0.254

6,792

$0.259

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Argo Parts USA

USA . 1,361 parts In-Stock

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$0.259

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$0.251

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Ampacity Inc.

Singapore . 3,739 parts In-Stock

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$0.374

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Corphita

USA . 2,110 parts In-Stock

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$0.711

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Component Stockers USA

USA . 6,534 parts In-Stock

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$0.730

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$0.320

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$0.240

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Kepictronics

USA . 20,000 parts In-Stock

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Metaverse IC Inc.

Canada . 10,880 parts In-Stock

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Perfect Parts

USA . 8,239 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 4,163 parts In-Stock

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Kulean Microsystems

USA . 3,210 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Supply Digital

USA . 2,729 parts In-Stock

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SupplyDigital Components

Austria . 1,802 parts In-Stock

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UHIMA Technologies

Türkiye . 925 parts In-Stock

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TANS Electronics

Latvia . 749 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unlock the potential of your applications with the QSD123 Phototransistor by Onsemi. With a peak wavelength of 880nm, this high-quality single configuration device offers reliable performance in a compact 5mm size. From infrared sensing to light detection, this versatile component provides fast response times and low dark current for precise results. Trust Onsemi's expertise in optoelectronics to deliver value and efficiency to your projects. Elevate your designs with the QSD123 and experience the difference!

Feature Benefit Bullets

Configuration: SINGLE

Having a single configuration simplifies the setup and allows for easier integration into various systems.

Size: 5 mm

Compact size makes it suitable for applications where space is limited.

Peak Wavelength (nm): 880

Optimized for a specific wavelength which enhances performance in applications requiring sensitivity to this wavelength.

Optoelectronic Type: PHOTO TRANSISTOR

Photo transistor type offers high sensitivity to light, making it ideal for light detection and measurement applications.

Maximum Operating Temperature: 100 °C

High maximum operating temperature ensures reliability in diverse environmental conditions.

Shape: ROUND

Round shape allows for omnidirectional light sensing, making it versatile in various lighting conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature enables usage in cold environments without compromising performance.

Terminal Finish: MATTE TIN

Matte tin finish enhances soldering reliability and conductivity for consistent performance.

Maximum Power Dissipation: 0.1 W

High power dissipation capability allows for handling of transient power surges effectively.

Nominal Light Current: 4 mA

High light current rating indicates strong sensitivity to light, ensuring accurate light detection.

Maximum Dark Current: 100 nA

Low dark current minimizes noise levels in low light conditions, improving the signal-to-noise ratio.

Infrared (IR) Range: YES

Infrared range capability extends the applications to include IR light detection and sensing.

Maximum Response Time: 0.000008 s

Ultra-fast response time ensures real-time light detection and rapid signal processing.

Minimum Collector-emitter Breakdown Voltage: 30 V

High breakdown voltage rating enhances the durability and reliability of the phototransistor in demanding conditions.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting allows for secure and stable installation in various electronic circuits and devices.

Technical Specifications

Phototransistors QSD123 attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Additional Features:

HIGH SENSITIVITY, DAY LIGHT FILTER

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

4 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.1 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Size:

5 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Trade Compliance

QSD123 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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