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2N7002DWH6327XTSA1

Infineon Technologies

2N7002DWH6327XTSA1 by Infineon Technologies

2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.

Median Price

$0.309

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 175,885 parts In-Stock

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$0.309

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175,885

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Arrow

USA . 222 parts In-Stock

1+ parts

$0.309

100+ parts

$0.112

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$0.069

10k+ parts

$0.048

222

$0.309

$0.112

$0.069

$0.048

Newark

USA . 20 parts In-Stock

1+ parts

$0.340

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$0.129

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$0.083

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20

$0.340

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$0.083

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Mouser Electronics

USA . 27,890 parts In-Stock

1+ parts

$0.360

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$0.146

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$0.097

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$0.069

27,890

$0.360

$0.146

$0.097

$0.069

Distrelec

Netherlands . 2,925 parts In-Stock

1+ parts

$0.507

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$0.452

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$0.364

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2,925

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Adafruit Industries

USA . 10 parts In-Stock

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$1.210

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$1.101

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$0.992

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10

$1.210

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Verical

USA . 175,885 parts In-Stock

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$0.150

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$0.098

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$0.070

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Element14

Singapore . 106,319 parts In-Stock

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Farnell

UK . 100,473 parts In-Stock

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$0.162

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$0.064

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DigiKey

USA . 15,015 parts In-Stock

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Flip Electronics (Authorized)

USA . 15,015 parts In-Stock

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Rochester

USA . 3,000 parts In-Stock

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$0.052

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$0.043

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$0.038

3,000

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$0.052

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$0.038

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 301 parts In-Stock

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$0.040

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Nova Conductors

Japan . 300 parts In-Stock

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Maritex

Poland . 9 parts In-Stock

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$0.105

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$0.087

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9

$0.199

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$0.087

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TME

Poland . 10,674 parts In-Stock

1+ parts

$0.270

100+ parts

$0.124

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$0.079

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10,674

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$0.124

$0.079

$0.053

NAC Semi

USA . 3,498,000 parts In-Stock

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IBS Electronics

USA . 1,854,000 parts In-Stock

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Vyrian

USA . 656,815 parts In-Stock

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Chip Stock

USA . 281,500 parts In-Stock

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Flip Electronics

USA . 15,015 parts In-Stock

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Bristol Electronics

USA . 11,920 parts In-Stock

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ComSIT Distribution GmbH

Germany . 10,754 parts In-Stock

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ComSIT USA

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Rotakorn

Sweden . 9,000 parts In-Stock

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A&K Electronics

USA . 9,000 parts In-Stock

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Rutronik

Germany . 6,000 parts In-Stock

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VNN

France . 2,851 parts In-Stock

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Schukat

Germany . 2,200 parts In-Stock

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$0.069

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$0.055

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$0.045

2,200

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$0.069

$0.055

$0.045

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 533,976 parts In-Stock

1+ parts

$0.027

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Semicontronic

India . 550,746 parts In-Stock

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Corphita

USA . 423 parts In-Stock

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Argo Parts USA

USA . 2,316 parts In-Stock

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$0.097

2,316

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Netroflash

USA . 100 parts In-Stock

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$0.129

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$0.123

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$0.120

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$0.129

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Corohmni

South Africa . 39 parts In-Stock

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$0.637

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$1.101

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$0.992

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10

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Aztec Data Supply Inc.

USA . 4,180 parts In-Stock

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$1.268

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Modulus Dynamics

Lithuania . 21,581 parts In-Stock

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$1.383

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$1.272

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Component Stockers USA

USA . 3,413 parts In-Stock

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$4.070

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$4.070

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$4.070

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$0.030

3,413

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$4.070

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Glotronic Ltd.

UK . 256,800 parts In-Stock

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Epart123

USA . 150,000 parts In-Stock

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Continental Prestige Electronics

USA . 139,356 parts In-Stock

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$0.085

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Futuretech Components

Singapore . 60,000 parts In-Stock

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GreenTree Electronics

Israel . 60,000 parts In-Stock

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RC Electronics

USA . 58,675 parts In-Stock

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Perfect Parts

USA . 33,429 parts In-Stock

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Robosynatics

Brazil . 17,024 parts In-Stock

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Lucentia Tech

USA . 17,024 parts In-Stock

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$1.075

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$1.075

iodParts Technologies Inc.

India . 14,255 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality 2N7002DWH6327XTSA1 Small Signal Field Effect Transistor from Infineon Technologies. With a focus on innovation and reliability, Infineon is a trusted manufacturer known for delivering top-notch components. This N-channel transistor is perfect for switching applications, offering a breakthrough in performance and efficiency. Its compact design, built-in diode, and low resistance make it a versatile choice for various projects. Trust in the value and benefits of this product to elevate your creations to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications and environments.

Polarity or Channel Type: N-CHANNEL

Offers efficient and fast switching characteristics, ideal for many electronic circuits and applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for versatile usage in circuits requiring multiple elements with the added functionality of a built-in diode.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Minimum DS Breakdown Voltage: 60 V

Offers a high breakdown voltage, providing an extra margin of safety in high voltage applications.

Surface Mount: YES

Enables easy and convenient mounting on circuit boards, saving space and simplifying assembly processes.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Features advanced MOSFET technology for efficient and high-performance transistor operation.

Maximum Drain Current (ID): 0.3 A

Can handle a maximum drain current of 0.3 A, suitable for various low-power applications.

Maximum Drain-Source On Resistance: 3 ohm

Provides low on-resistance for efficient power handling and reduced heat dissipation.

Maximum Feedback Capacitance (Crss): 3 pF

Low feedback capacitance helps in reducing signal distortion and improving overall circuit performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N7002DWH6327XTSA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.3 A

Maximum Drain-Source On Resistance:

3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

3 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N7002DWH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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