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FDV301N-F169

Onsemi

FDV301N-F169 by Onsemi

FDV301N-F169 by Onsemi is a N-CHANNEL FET with 25V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max ID of 0.22A and RDS(on) of 4 ohm, it offers reliable performance in small outline packages.

Median Price

$0.058

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$0.659

100+ parts

$0.626

1k+ parts

$0.626

10k+ parts

-

1,000

$0.659

$0.626

$0.626

-

Rochester

USA . 116,449 parts In-Stock

1+ parts

-

100+ parts

$0.058

1k+ parts

$0.048

10k+ parts

$0.043

116,449

-

$0.058

$0.048

$0.043

Verical

USA . 107,196 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.054

107,196

-

-

-

$0.054

DigiKey

USA . 57,096 parts In-Stock

1+ parts

-

100+ parts

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57,096

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Flip Electronics (Authorized)

USA . 57,096 parts In-Stock

1+ parts

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57,096

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

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1,000

$0.043

-

-

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Digiode

USA . 1,554 parts In-Stock

1+ parts

$0.046

100+ parts

-

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1,554

$0.046

-

-

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Vyrian

USA . 67,650 parts In-Stock

1+ parts

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67,650

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Flip Electronics

USA . 57,096 parts In-Stock

1+ parts

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57,096

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DigiKey Marketplace

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.040

48,000

-

-

-

$0.040

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 495 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

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10k+ parts

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495

$0.040

-

-

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Ampacity Inc.

Singapore . 67,756 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

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67,756

$0.041

-

-

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.042

100+ parts

-

1k+ parts

$0.040

10k+ parts

-

2,000

$0.042

-

$0.040

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Argo Parts USA

USA . 4,954 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

10k+ parts

$0.041

4,954

$0.043

-

-

$0.041

Continental Prestige Electronics

USA . 4,934 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

10k+ parts

$0.042

4,934

$0.043

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-

$0.042

Corphita

USA . 1,571 parts In-Stock

1+ parts

$0.043

100+ parts

-

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1,571

$0.043

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Modulus Dynamics

Lithuania . 42 parts In-Stock

1+ parts

$0.047

100+ parts

$0.047

1k+ parts

$0.045

10k+ parts

-

42

$0.047

$0.047

$0.045

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Semicontronic

India . 67,608 parts In-Stock

1+ parts

$0.089

100+ parts

$0.087

1k+ parts

$0.086

10k+ parts

-

67,608

$0.089

$0.087

$0.086

-

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.659

100+ parts

$0.626

1k+ parts

$0.626

10k+ parts

-

1,000

$0.659

$0.626

$0.626

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Aztec Data Supply Inc.

USA . 100 parts In-Stock

1+ parts

$1.880

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100

$1.880

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Authorized Procurement Solutions

USA . 9,000 parts In-Stock

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9,000

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Problanco Electronics

Mexico . 7,008 parts In-Stock

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Kulean Microsystems

USA . 6,774 parts In-Stock

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6,774

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SupplyDigital Components

Austria . 2,227 parts In-Stock

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2,227

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TANS Electronics

Latvia . 2,064 parts In-Stock

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2,064

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Robosynatics

Brazil . 2,000 parts In-Stock

1+ parts

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100+ parts

$0.246

1k+ parts

$0.246

10k+ parts

$0.246

2,000

-

$0.246

$0.246

$0.246

Lucentia Tech

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$0.246

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$0.246

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$0.246

2,000

-

$0.246

$0.246

$0.246

UHIMA Technologies

Türkiye . 647 parts In-Stock

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647

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Overview

Discover the cutting-edge FDV301N-F169 by Onsemi, a top-of-the-line Small Signal Field Effect Transistor that guarantees superior performance and reliability. With Onsemi's reputation for excellence in semiconductor manufacturing, this N-CHANNEL FET offers unmatched quality and precision. Ideal for switching applications, this transistor boasts a built-in diode and operates in enhancement mode for seamless functionality. Say goodbye to technical hitches and hello to seamless operation with the FDV301N-F169 - your go-to solution for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a long lifespan.

Polarity or Channel Type: N-CHANNEL

Enhances the efficiency of the transistor in amplifying or switching signals.

Configuration: SINGLE WITH BUILT-IN DIODE

Allows for simple circuit design by incorporating a diode within the transistor package.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it reliable and efficient in such scenarios.

Surface Mount: YES

Facilitates easy mounting on circuit boards, saving space and allowing for automated assembly.

Minimum DS Breakdown Voltage: 25 V

Withstands high voltage levels, ensuring reliable performance in various applications.

Package Shape: RECTANGULAR

Simplifies the installation process on circuit boards and enhances the overall aesthetics of the product.

Terminal Form: GULL WING

Provides a secure connection and ease of soldering during installation.

Operating Mode: ENHANCEMENT MODE

Offers improved control over the switching behavior of the transistor.

No. of Terminals: 3

Provides the necessary connections for proper function in the circuit.

Package Style (Meter): SMALL OUTLINE

Saves space on the circuit board, making it ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high performance and reliability in a wide range of operating conditions.

Transistor Element Material: SILICON

Ensures durability and efficiency in signal amplification and switching.

Minimum Operating Temperature: -55 °C

Can withstand low operating temperatures, making it suitable for harsh environments.

Terminal Finish: Matte Tin (Sn) - annealed

Ensures a reliable connection and prevents corrosion of terminals.

Maximum Drain Current (ID): 0.22 A

Handles high current loads, making it suitable for various applications.

Maximum Drain-Source On Resistance: 4 ohm

Provides low power dissipation and efficient current flow in the circuit.

Terminal Position: DUAL

Allows for easy connections to the circuit board, enhancing overall functionality.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reliability during the manufacturing process.

Peak Reflow Temperature °C: 260

Withstands high-temperature reflow processes, ensuring durability during manufacturing.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDV301N-F169 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (ID):

.22 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDV301N-F169 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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