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FDV303N_NL

Fairchild Semiconductor

FDV303N_NL by Fairchild Semiconductor

FDV303N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A ID, and 0.45 ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at 150°C max temp, it features ENHANCEMENT MODE technology for efficient performance.

Median Price

$1.651

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Adafruit Industries

USA . 300 parts In-Stock

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$1.651

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$1.569

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$1.569

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$1.651

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Digiode

USA . 732 parts In-Stock

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Corohmni

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$0.979

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Aztec Data Supply Inc.

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$1.169

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$1.358

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Corphita

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$1.486

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Decca Corp

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$2.989

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$9.244

AZTECH Wire

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Overview

Enhance your electronic projects with the FDV303N_NL by Fairchild Semiconductor. Manufactured by a trusted name in the industry, this small signal field effect transistor offers reliable performance and versatility for a variety of applications. With its N-channel configuration and built-in diode, this transistor is perfect for switching circuits. Its compact design and surface mount capability make it easy to integrate into your designs. Trust Fairchild Semiconductor for quality components that deliver exceptional value and performance. Upgrade your projects today with the FDV303N_NL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used for high power applications, making this transistor a good choice for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects the transistor from reverse voltage, providing added convenience and reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor delivers efficient performance in controlling the flow of current.

Surface Mount: YES

Being surface mountable, this transistor is easy to install on circuit boards, saving space and enabling compact designs.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this transistor can safely operate in various circuit environments without risk of damage.

Package Shape: RECTANGULAR

The rectangular package shape provides easy integration into circuit designs, enhancing versatility and compatibility.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high performance and efficiency in switching applications, making this transistor a reliable choice.

Maximum Drain Current (Abs) (ID): 0.68 A

With a maximum drain current of 0.68A, this transistor can handle moderate power loads effectively, ensuring stable operation.

No. of Terminals: 3

Having 3 terminals allows for easy connectivity in circuit designs, facilitating smooth operation and efficient power flow.

Maximum Power Dissipation (Abs): 0.35 W

The maximum power dissipation of 0.35W indicates the transistor's ability to dissipate heat efficiently, ensuring reliable performance under varying load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards, making this transistor ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability and performance in field effect transistors, ensuring long-lasting operation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors are known for their high efficiency and reliability, making this transistor a durable and dependable choice.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent conductivity and solderability, ensuring secure connections and stable performance.

Maximum Drain-Source On Resistance: 0.45 ohm

With a maximum on-resistance of 0.45 ohms, this transistor minimizes power loss and heat generation, enhancing overall efficiency.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit board placement, enabling versatile design options and ensuring optimal performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDV303N_NL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (Abs) (ID):

.68 A

Maximum Drain Current (ID):

.68 A

Maximum Drain-Source On Resistance:

.45 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDV303N_NL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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