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BSS138NE6433

Infineon Technologies

BSS138NE6433 by Infineon Technologies

BSS138NE6433 by Infineon Technologies is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is surface mountable and has a max drain current of 0.23A. This transistor is commonly used in applications requiring enhancement mode operation and low power dissipation.

Median Price

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4

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1k+

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Vyrian

USA . 3,583 parts In-Stock

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VNN

France . 2,923 parts In-Stock

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2,923

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Digiode

USA . 81 parts In-Stock

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Nova Conductors

Japan . 76 parts In-Stock

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Corohmni

South Africa . 299 parts In-Stock

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$0.480

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299

$0.480

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Modulus Dynamics

Lithuania . 5,600 parts In-Stock

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$1.744

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$1.674

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$1.604

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5,600

$1.744

$1.674

$1.604

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Semicontronic

India . 1,155 parts In-Stock

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$13.050

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$12.724

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$12.658

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1,155

$13.050

$12.724

$12.658

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AZTECH Wire

Italy . 756 parts In-Stock

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$16.517

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Ampacity Inc.

Singapore . 1,100 parts In-Stock

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$61.050

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Component Stockers USA

USA . 293 parts In-Stock

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$99.990

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293

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Continental Prestige Electronics

USA . 3,195 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

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$10.606

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$10.606

Corphita

USA . 252 parts In-Stock

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Argo Parts USA

USA . 170 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Discover the BSS138NE6433 by Infineon Technologies, a high-quality Small Signal Field Effect Transistor (FET) that offers exceptional value and benefits. With its N-CHANNEL configuration and built-in diode, this transistor is perfect for a wide range of applications. Its compact and surface-mount design, along with its robust package body material, ensures durability and reliability. Experience enhanced performance with its maximum drain current of 0.23 A and minimum DS breakdown voltage of 60 V. Whether you're designing circuits or building electronic devices, the BSS138NE6433 is your go-to choice for efficiency and excellence.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material offers good durability and insulating properties, making it a reliable choice for small signal Field Effect Transistors.

Polarity or Channel Type

N-CHANNEL - N-channel transistors provide efficient amplification and switching capabilities, making them suitable for various electronic applications.

Configuration

SINGLE WITH BUILT-IN DIODE - The built-in diode enhances the functionality of this transistor, allowing for better control and protection in circuit designs.

Surface Mount

YES - Being surface mountable, this transistor offers easy integration onto circuit boards, saving valuable space and simplifying assembly processes.

Minimum DS Breakdown Voltage

60 V - With a high breakdown voltage, this transistor can handle larger voltages without failure, ensuring reliable operation in demanding applications.

Package Shape

RECTANGULAR - The rectangular shape of this transistor's package offers better compatibility with automated assembly processes, making it ideal for high-volume production.

Terminal Form

GULL WING - The gull wing terminal form provides improved solderability, secure connection, and ease of testing during manufacturing, ensuring a robust and reliable product.

Operating Mode

ENHANCEMENT MODE - The enhancement mode operation offers low on-resistance and high gain, making this transistor a high-performance choice for amplification and signal switching.

No. of Elements

1 - With a single element, this transistor simplifies circuit designs and reduces complexity, making it a cost-effective solution for various applications.

Maximum Drain Current (Abs) (ID)

0.23 A - The high maximum drain current allows this transistor to handle substantial current flows, ensuring its suitability for power-hungry devices and applications.

No. of Terminals

3 - The three terminals allow for easy connection to external circuitry, facilitating integration and offering flexibility in circuit design.

Maximum Power Dissipation (Abs)

0.36 W - This transistor's high maximum power dissipation rating ensures it can handle power spikes and reliable operation under demanding conditions.

Package Style (Meter)

SMALL OUTLINE - The small outline package style makes this transistor space-efficient, facilitating miniaturization and enabling compact designs in applications with limited space.

Field Effect Transistor Technology

METAL-OXIDE SEMICONDUCTOR - Utilizing metal-oxide semiconductor technology, this transistor offers efficient performance, low power consumption, and improved temperature stability.

Maximum Operating Temperature

150 °C - With a high maximum operating temperature, this transistor can withstand harsh environmental conditions, ensuring reliable operation in various applications.

Transistor Element Material

SILICON - Silicon is a widely used and reliable material for transistor elements, providing excellent electrical properties and temperature stability.

Minimum Operating Temperature

55 °C - The low minimum operating temperature ensures this transistor can operate reliably even in extreme cold conditions, expanding its applicability in various environments.

Maximum Drain-Source On Resistance

3.5 ohm - The low drain-source on resistance minimizes power loss and improves efficiency, making this transistor suitable for high-performance applications.

Terminal Position

DUAL - The dual terminal position allows for versatile mounting and efficient routing of connections on circuit boards, providing flexibility in layout and design.

Moisture Sensitivity Level (MSL)

1 - With an MSL level of 1, this transistor is highly resistant to moisture and withstands standard board-level soldering processes without compromising performance or reliability.

Peak Reflow Temperature °C

260 - The high peak reflow temperature ensures proper solder joint formation during assembly, guaranteeing reliable connections and eliminating potential issues.

Maximum Feedback Capacitance (Crss)

3.8 pF - The low feedback capacitance minimizes signal distortion and allows for high-frequency operation, making this transistor suitable for applications with stringent bandwidth requirements.

Reference Standard

MIL-STD-883 - Complying with the MIL-STD-883 standard ensures this transistor meets rigorous reliability and performance criteria, making it an ideal choice for demanding military or industrial applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS138NE6433 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.23 A

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

3.8 pF

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.36 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

MIL-STD-883

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

BSS138NE6433 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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