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IRLML2502TRPBF-1

Infineon Technologies

IRLML2502TRPBF-1 by Infineon Technologies

Infineon's IRLML2502TRPBF-1 is a N-channel FET with 20V DS breakdown voltage and 4.2A max drain current. Ideal for enhancement mode operation, it has a built-in diode and 0.045 ohm RDS(on). Widely used in small outline packages for applications requiring high power dissipation up to 1.25W at temperatures ranging from -55°C to 150°C.

Median Price

$0.144

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 70 parts In-Stock

1+ parts

$0.938

100+ parts

$0.891

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$0.891

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70

$0.938

$0.891

$0.891

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Rochester

USA . 3,800 parts In-Stock

1+ parts

-

100+ parts

$0.144

1k+ parts

$0.119

10k+ parts

$0.107

3,800

-

$0.144

$0.119

$0.107

Verical

USA . 3,000 parts In-Stock

1+ parts

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$0.133

3,000

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$0.133

Distributors (In-Stock)

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Digiode

USA . 477 parts In-Stock

1+ parts

$0.112

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477

$0.112

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Vyrian

USA . 136 parts In-Stock

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136

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Nova Conductors

Japan . 62 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 246 parts In-Stock

1+ parts

$0.100

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246

$0.100

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Semicontronic

India . 236 parts In-Stock

1+ parts

$0.100

100+ parts

$0.098

1k+ parts

$0.097

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236

$0.100

$0.098

$0.097

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Corphita

USA . 503 parts In-Stock

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$0.106

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503

$0.106

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Aztec Data Supply Inc.

USA . 4,894 parts In-Stock

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$0.515

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4,894

$0.515

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.938

100+ parts

$0.891

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$0.891

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70

$0.938

$0.891

$0.891

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Modulus Dynamics

Lithuania . 2,353 parts In-Stock

1+ parts

$1.286

100+ parts

$1.235

1k+ parts

$1.183

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2,353

$1.286

$1.235

$1.183

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Corohmni

South Africa . 312 parts In-Stock

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$1.859

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312

$1.859

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Continental Prestige Electronics

USA . 3,929 parts In-Stock

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3,929

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Lucentia Tech

USA . 1,775 parts In-Stock

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$1.859

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$1.859

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$1.859

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$1.859

$1.859

$1.859

Argo Parts USA

USA . 801 parts In-Stock

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801

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Overview

Boost your electronic projects with the IRLML2502TRPBF-1 by Infineon Technologies, a top-tier manufacturer known for delivering high-quality Small Signal Field Effect Transistors (FET). This N-CHANNEL transistor offers reliability and performance in a compact package, perfect for a wide range of applications. With a maximum drain current of 4.2 A and a minimum DS breakdown voltage of 20 V, this transistor provides exceptional power and efficiency. Trust Infineon Technologies to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and ensures the product can withstand harsh environmental conditions.

Polarity or Channel Type: N-CHANNEL

The N-channel design allows for efficient switching and low on-state resistance, making it suitable for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and helps protect against back EMF, enhancing the overall performance of the transistor.

Surface Mount: YES

The surface mount capability allows for easy and compact integration onto circuit boards, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 20 V

The 20V minimum breakdown voltage ensures reliable operation and protection against voltage spikes in the system.

Package Shape: RECTANGULAR

The rectangular package shape provides ease of handling and mounting, making it ideal for automated assembly processes.

Terminal Form: GULL WING

The gull wing terminal form offers secure solder connections and improved thermal performance for efficient heat dissipation.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for precise control and modulation of the transistor, enhancing overall performance.

Maximum Drain Current (Abs) (ID): 4.2 A

With a high maximum drain current of 4.2A, this transistor can handle demanding load conditions with ease.

No. of Terminals: 3

The 3 terminals provide easy connectivity and flexibility in circuit design, making it suitable for a wide range of applications.

Maximum Power Dissipation (Abs): 1.25 W

The maximum power dissipation of 1.25W ensures reliable operation and prevents overheating during high-power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for high-density mounting, making it ideal for compact applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology offers high performance, low noise, and improved reliability in various operating conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures stable performance under extreme temperature conditions.

Transistor Element Material: SILICON

The silicon material used in the transistor element provides high efficiency, reliability, and low noise performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C enables reliable operation in cold environments without compromising performance.

Maximum Drain-Source On Resistance: 0.045 ohm

The low drain-source on resistance of 0.045 ohm reduces power losses and improves efficiency in switching applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and ensures easy connectivity in various configurations.

Maximum Feedback Capacitance (Crss): 66 pF

The maximum feedback capacitance of 66pF ensures stable operation and prevents signal distortion in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) IRLML2502TRPBF-1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

4.2 A

Maximum Drain Current (ID):

4.2 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

66 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1.25 W

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

IRLML2502TRPBF-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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