Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; No. of Elements: 1; JESD-609 Code: e3;
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Small Signal Field Effect Transistors (FET) IRLML2402TRPBF-1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier
Configuration:
Maximum Drain Current (Abs) (ID):
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JESD-609 Code:
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IRLML2402TRPBF-1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
M39029/58-360
Tri-star Electronics International
CONNECTOR ACCESSORY; Material: COPPER ALLOY; MIL Conformity: YES; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; MIL-Connector Accessory Name: CONTACT; Terminal Type: CRIMP;
BAV99
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
SMBJ18CA
Jiangsu Jiejie Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM317T
Fairchild Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Output Current-1: 1.5 A; No. of Outputs: 1; Qualification Status: Not Qualified;
Tesla Elektronicke Soucastky
LM7805CT
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
MBR0520LT1G
Onsemi
MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.
FDN5618P
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
M24308/2-1F
Itt Cannon
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSFM-T3; Adjustability: ADJUSTABLE; Package Equivalence Code: SIP3,.1TB;
2N7002
Comchip Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
FDD5614P
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
Carlisle Interconnect Technologies
GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;
1N4148W-T
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STMicroelectronics
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;
MMBFJ112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: DEPLETION MODE; No. of Terminals: 3;
IRLL2705TRPBF
Infineon Technologies
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 30 A; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
BSS223PWH6327XTSA1
Infineon BSS223PWH6327XTSA1 is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.39A ID, and 1.2Ω RDS(ON). Ideal for small signal applications due to its ENHANCEMENT MODE operation and built-in diode configuration. Suitable for compact designs with its GULL WING terminals and SMALL OUTLINE package style.
2N7002BKM,315
NXP Semiconductors
NXP Semiconductors' 2N7002BKM,315 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.45A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.7W. This chip carrier package has a max operating temperature of 150°C and features a built-in diode for efficient performance.
2N7002KW
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ULTRA-LOW RESISTANCE; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
FDS6681Z
FDS6681Z by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and 20A max Drain Current. Operating in ENHANCEMENT MODE, it has a max Power Dissipation of 2.5W and 0.0046 ohm Drain-Source On Resistance.
SI2319DS-T1-GE3
Vishay Intertechnology
SI2319DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage and 2.3A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. The transistor features a built-in DIODE, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology in a RECTANGULAR package style.
FDN306P
FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.
BSS670S2LH6327XTSA1
Infineon's BSS670S2LH6327XTSA1 is a N-CHANNEL FET with 55V DS breakdown voltage, 0.54A ID, and 0.825 ohm RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
FDMC8030
FDMC8030 by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 50A Max Pulsed Drain Current, and 21mJ Avalanche Energy Rating. With a SQUARE package shape and NO LEAD terminals, it operates in ENHANCEMENT MODE with a max power dissipation of 14W at 150°C.
BSS806NH6327XTSA1
BSS806NH6327XTSA1 by Infineon is a N-CHANNEL FET with 20V DS breakdown voltage, 9.3A pulsed drain current, and 0.057ohm max on-resistance. Ideal for applications requiring small outline package style, it operates in enhancement mode with a max temperature of 150°C.
NUD3105DMT1G
NUD3105DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 6V breakdown voltage, 0.5A drain current, and 1.3 ohm on resistance. Ideal for surface mount designs in small outline packages at temperatures up to 150°C.
BSS138P,215
NXP Semiconductors' BSS138P,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.36A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1140W.
ZXMN6A07FTA
Zetex Plc
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; Terminal Finish: Matte Tin (Sn); JESD-30 Code: R-PDSO-G3;
BS250P
Diodes Incorporated
Diodes Inc.'s BS250P is a P-CHANNEL FET with 45V DS Breakdown Voltage and 0.23A Drain Current. Ideal for applications requiring low power dissipation, such as portable electronics. Features include ENHANCEMENT MODE operation, SILICON transistor element, and 150°C max operating temp.
IRLHS6376TRPBF
IRLHS6376TRPBF by Infineon is a N-CHANNEL FET with 30V DS breakdown voltage and 3.4A max drain current, ideal for switching applications. It features separate elements with built-in diode in a small outline package, operating in enhancement mode at up to 150°C. With 0.082 ohm max on-resistance and 6.6W power dissipation, it offers reliable performance for various electronic designs.
ZVP2106ASTZ
ZVP2106ASTZ by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 0.28A max drain current, and 5 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.7W at 150°C.
DMP10H4D2S-7
DMP10H4D2S-7 by Diodes Inc. is a P-channel FET with 100V DS breakdown voltage, 0.27A max drain current, and 4.2 ohm max on resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and -55°C min operating temp.
NDC7003P
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .34 A;
2N7002T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Package Style (Meter): SMALL OUTLINE;
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IRLML2803TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Infineon's IRLML2803TRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.2A Drain Current, 0.25 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY package, it can handle temperatures from -55 to 150 °C.
IRLML2502TRPBF-1
Infineon's IRLML2502TRPBF-1 is a N-channel FET with 20V DS breakdown voltage and 4.2A max drain current. Ideal for enhancement mode operation, it has a built-in diode and 0.045 ohm RDS(on). Widely used in small outline packages for applications requiring high power dissipation up to 1.25W at temperatures ranging from -55°C to 150°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .045 ohm;
IRLML2402TRPBF
Infineon Technologies' IRLML2402TRPBF is a N-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. With 1.2A max drain current and 0.25 ohm max on resistance, it can handle up to 0.54W power dissipation efficiently at temperatures ranging from -55°C to 150°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Maximum Time At Peak Reflow Temperature (s): 30; No. of Terminals: 3;
IRLML6344TRPBF
Small Signal Field-Effect Transistors; Qualification: Not Qualified; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 5 A; Maximum Time At Peak Reflow Temperature (s): 30;
IRLML6402TRPBF-1
Infineon's IRLML6402TRPBF-1 is a P-CHANNEL FET with 4.3A max drain current and 1.3W power dissipation. Ideal for surface mount applications, it operates up to 150°C, making it suitable for various electronic devices requiring high-performance transistors.
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 4.3 A;
IRLML5103TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Transistor Application: SWITCHING; JESD-30 Code: R-PDSO-G3;
Infineon's IRLML5103TRPBF is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.54A Drain Current, and 0.6 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating from -55 to 150 °C.
IRLML6244TRPBF
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Pulsed Drain Current (IDM): 32 A; Peak Reflow Temperature (C): 260; Qualification: Not Qualified;
IRLML2803TRPBF-1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .25 ohm; JEDEC-95 Code: TO-236AB; JESD-30 Code: R-PDSO-G3;
IRLML2803TRPBF-1 by Infineon is a N-channel FET with 30V DS breakdown voltage and 1.2A max drain current. It is used in enhancement mode applications, featuring a built-in diode and 0.25 ohm RDS(on). Ideal for small outline packages requiring high power dissipation up to 150°C.
IRLML6302TRPBF
IRLML6302TRPBF by Infineon is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.78A Drain Current, and 0.6 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150°C. This small outline transistor has a built-in diode and matte tin finish for surface mount installation.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; No. of Terminals: 3; Terminal Form: GULL WING;
IRLML6346TRPBF
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 3.4 A; Maximum Pulsed Drain Current (IDM): 17 A; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
IRLML9303TRPBF
Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
IRLML2060TRPBF
Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; Maximum Pulsed Drain Current (IDM): 4.8 A;
IRLML2402GPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Moisture Sensitivity Level (MSL): 1; Terminal Form: GULL WING;
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