Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SFT1407-TL-E
Onsemi
SFT1407-TL-E by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 45V DS Breakdown Voltage, 14A ID, and 0.028 ohm RDS(on). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.
DRAIN
SINGLE
45 V
14 A
.028 ohm
METAL-OXIDE SEMICONDUCTOR
190 pF
R-PSSO-G2
e6
1
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
1 W
20 W
YES
Tin/Bismuth (Sn/Bi)
GULL WING
SWITCHING
SILICON
SMMBF4391LT1G
SMMBF4391LT1G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 3.5pF Crss, and -55 to 150 °C operating temperature range. This SMALL OUTLINE transistor with GULL WING terminals is ideal for DEPLETION MODE operation in various electronic circuits.
30 V
30 ohm
JUNCTION
3.5 pF
TO-236
R-PDSO-G3
e3
3
DEPLETION MODE
150 Cel
-55 Cel
260
.225 W
AEC-Q101
Other Transistors
TIN
DUAL
NVF2201NT1G
NVF2201NT1G by Onsemi is a N-CHANNEL FET with 0.3A max drain current and 0.15W max power dissipation. Ideal for surface mount applications, it operates at up to 150 °C making it suitable for various electronic devices requiring high temperature resistance.
.3 A
.15 W
FET General Purpose Powers
30
NTMFS4C06NT3G
NTMFS4C06NT3G by Onsemi is a N-CHANNEL FET with 69A max drain current and 30.5W power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features METAL-OXIDE SEMICONDUCTOR technology. Suitable for surface mount configurations, it offers reliability in various electronic designs.
69 A
30.5 W
FET General Purpose Power
MATTE TIN
NTTFS3A08PZTAG
NTTFS3A08PZTAG by Onsemi is a P-CHANNEL FET with 22A max drain current and 4.9W power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and power management systems.
22 A
P-CHANNEL
4.9 W
DMN3030LFG-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; No. of Elements: 1; JESD-609 Code: e3;
8.6 A
2.3 W
DMN3030LFG-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Drain Current (ID): 8.6 A; Terminal Finish: MATTE TIN;
NTNS3A65PZT5G
NTNS3A65PZT5G by Onsemi is a P-CHANNEL FET with max drain current of 0.281A and power dissipation of 0.218W. Ideal for applications requiring high temperature resistance up to 150°C, such as in surface mount configurations for electronic devices.
.281 A
e4
.218 W
NICKEL PALLADIUM GOLD
NTTFS4C25NTWG
NTTFS4C25NTWG by Onsemi is a N-CHANNEL FET with 27A max drain current and 20.2W power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 150°C, ideal for high-power applications requiring surface mount configuration.
27 A
20.2 W
NTZS3151PT1H
NTZS3151PT1H by Onsemi is a P-CHANNEL FET with 0.86A max drain current and 0.21W power dissipation. Ideal for applications requiring surface mount technology, it operates at up to 150 °C and features metal-oxide semiconductor technology.
.86 A
.21 W
DMP2225LQ-7
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; No. of Elements: 1; Maximum Drain Current (ID): 2.6 A;
2.6 A
1.08 W
NTLUS3A18PZCTAG
NTLUS3A18PZCTAG by Onsemi is a P-CHANNEL FET with 8.2A max drain current and 3.8W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and industrial control systems.
8.2 A
3.8 W
NTLUS3A18PZCTBG
NTLUS3A18PZCTBG by Onsemi is a P-CHANNEL FET with 8.2A max drain current and 3.8W power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive electronics or power management systems.
SFT1345-TL-H
The Onsemi SFT1345-TL-H is a P-CHANNEL FET with 11A max drain current and 35W max power dissipation. Ideal for surface mount applications, it features metal-oxide semiconductor technology and tin bismuth terminal finish.
11 A
35 W
TIN BISMUTH
5LN01SP-AC
5LN01SP-AC by Onsemi is a N-CHANNEL FET with max drain current of 0.1A and power dissipation of 0.25W. Ideal for applications requiring single configuration, it operates at up to 150°C making it suitable for various electronic devices.
.1 A
e2
.25 W
NO
Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
5LP01SS-TL-E
5LP01SS-TL-E by Onsemi is a P-CHANNEL FET with 0.07A max drain current and 0.15W power dissipation. Ideal for applications requiring surface mount technology, such as temperature-sensitive circuits in consumer electronics.
.07 A
MCH3376-TL-E
MCH3376-TL-E by Onsemi is a P-CHANNEL FET with 1.5A max drain current and 0.8W power dissipation. Ideal for applications requiring surface mount technology, such as in METAL-OXIDE SEMICONDUCTOR circuits operating up to 150 °C.
1.5 A
.8 W
SCH1330-TL-H
SCH1330-TL-H by Onsemi is a P-CHANNEL FET with 1.5A max drain current and 1W max power dissipation. Ideal for surface mount applications, it operates at up to 150 °C making it suitable for various electronic devices requiring high temperature resistance.
SCH1332-TL-H
SCH1332-TL-H by Onsemi is a P-CHANNEL FET with 2.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C, making it suitable for various electronic devices requiring high-performance transistors.
2.5 A
SCH1343-TL-H
SCH1343-TL-H by Onsemi is a P-CHANNEL FET with 3.5A max drain current and 1W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, it features surface mount configuration for compact designs in electronics.
3.5 A
SCH1345-TL-H
SCH1345-TL-H by Onsemi is a P-CHANNEL FET with 4.5A max drain current and 1W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as in surface mount configurations for electronic devices.
4.5 A
BS107PSTOA
Zetex Plc
BS107PSTOA by Zetex Plc is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 0.12A and 23 ohm RDS(on), operating in ENHANCEMENT MODE at up to 200°C. The transistor's PLASTIC/EPOXY body, RECTANGULAR shape, and WIRE terminals make it suitable for various electronic designs.
200 V
.12 A
23 ohm
R-PSIP-W3
200 Cel
IN-LINE
Not Qualified
WIRE
10
BS107PSTOB
BS107PSTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. With 200V DS Breakdown Voltage, it has 23 ohm Drain-Source On Resistance and 0.12A Drain Current. Its PLASTIC/EPOXY body, ENHANCEMENT MODE operation, and SILICON material make it ideal for various electronic circuits.
ZVNL120ASTOB
ZVNL120ASTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 200V DS Breakdown Voltage, 0.18A ID, and 10Ω RDS(on). With SILICON element material and ENHANCEMENT MODE operation, it operates up to 200°C making it suitable for various electronic circuits.
.18 A
10 ohm
ZVN4424ASTOA
ZVN4424ASTOA by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 240V DS Breakdown Voltage, 0.26A Drain Current, and 6ohm On Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 200°C and uses METAL-OXIDE SEMICONDUCTOR tech.
240 V
.26 A
6 ohm
ZVN4424ASTOB
ZVN4424ASTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 240V DS Breakdown Voltage, 0.26A ID, and 6Ω Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 200°C and uses METAL-OXIDE SEMICONDUCTOR technology.
ZVN0545ASTOB
ZVN0545ASTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 450V DS Breakdown Voltage, 50Ω Drain-Source On Resistance, and 0.09A Max Drain Current. Ideal for high voltage switching circuits due to its ENHANCEMENT MODE operation and SILICON material.
450 V
.09 A
50 ohm
ZVN4206ASTOA
Zetex Plc's ZVN4206ASTOA is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for SWITCHING applications. Featuring SINGLE configuration, it has 0.6A ID and 1.5 ohm RDS(on), operating in ENHANCEMENT MODE at up to 200°C. Package style: IN-LINE, terminal finish: MATTE TIN, making it suitable for various electronic designs.
60 V
.6 A
1.5 ohm
ZVN4206ASTOB
Zetex Plc's ZVN4206ASTOB is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Featuring single configuration, 0.6A ID, and 1.5Ω RDS(on), it operates in enhancement mode up to 200°C. Its rectangular package with wire terminals makes it suitable for various electronic devices.
ZVP2110ASTOA
ZVP2110ASTOA by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.23A ID, and 8Ω RDS(ON). With ENHANCEMENT MODE operation and SILICON material, it operates up to 200°C making it ideal for various electronic circuits.
100 V
.23 A
8 ohm
ZVP2110ASTOB
ZVP2110ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 8Ω Drain-Source Resistance, and 0.23A Drain Current. With SILICON element material and ENHANCEMENT MODE operation, it's ideal for various electronic circuits.
ZVP4424ASTOB
ZVP4424ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 240V DS Breakdown Voltage, 15 ohm Drain-Source Resistance, and 0.2A Drain Current. With ENHANCEMENT MODE operation and SILICON material, it operates at up to 200°C.
.2 A
15 ohm
ZVP3306ASTOB
ZVP3306ASTOB by Zetex Plc is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 14 ohm Drain-Source On Resistance, 0.16A Drain Current, and operates at up to 200°C. The transistor has a RECTANGULAR shape, WIRE terminals, and uses METAL-OXIDE SEMICONDUCTOR technology.
.16 A
14 ohm
ZVP3306ASTZ
ZVP3306ASTZ by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 14 ohm Drain-Source On Resistance, and 0.16A Drain Current. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology, it's ideal for various electronic circuits requiring efficient switching capabilities.
ZVP2106ASTOB
ZVP2106ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.28A ID, and 5Ω RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 200°C.
.28 A
5 ohm
2SJ600-Z-E1-AZ
Renesas Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
25 A
NOT SPECIFIED
45 W
2SK3386(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Maximum Drain Current (Abs) (ID): 34 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
34 A
40 W
2SK3402(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
36 A
UPA1917TE-T1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 6 A;
6 A
2 W
2SJ624-T1B-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
1.25 W
2SJ648-T1-A
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e6;
.4 A
.2 W
2SK3385(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
30 A
36 W
2SK3483(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 28 A;
28 A
2SK3484(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 16 A;
16 A
30 W
PCP1405-TD-H
The Onsemi PCP1405-TD-H is a N-CHANNEL FET with 0.6A max drain current and 3.5W max power dissipation. Ideal for surface mount applications, it operates up to 150 °C making it suitable for various electronic devices requiring high temperature tolerance.
3.5 W
PN4303/D26Z
National Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Application: AMPLIFIER; Terminal Form: THROUGH-HOLE;
3 pF
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
THROUGH-HOLE
BOTTOM
AMPLIFIER
2N5457/D26Z
2N5457/D26Z by National Semiconductor is a N-CHANNEL DEPLETION MODE FET with PLASTIC/EPOXY package. It has a max feedback capacitance of 3 pF and is commonly used for SWITCHING applications.
2N5457/D27Z
2N5457/D27Z by National Semiconductor is a N-CHANNEL FET with DEPLETION MODE operation. It has 3 terminals, PLASTIC/EPOXY body, and 3 pF Crss. Ideal for SWITCHING applications due to its JUNCTION technology and SINGLE configuration in a CYLINDRICAL package.
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