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2SJ600-Z-E1-AZ

Renesas Electronics

2SJ600-Z-E1-AZ by Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

Median Price

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Lifecycle Status

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1

In-Stock Inventory

1k+

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Vyrian

USA . 1,886 parts In-Stock

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1,886

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Distributors (Availability)

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AZTECH Wire

Italy . 50 parts In-Stock

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$11.870

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50

$11.870

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Component Stockers USA

USA . 775 parts In-Stock

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$99.990

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775

$99.990

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Native Components

USA . 151 parts In-Stock

1+ parts

$398.810

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$390.834

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$386.846

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$382.858

151

$398.810

$390.834

$386.846

$382.858

Northwest PG Solutions

USA . 498 parts In-Stock

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$438.691

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498

$438.691

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Perfect Parts

USA . 20,160 parts In-Stock

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20,160

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A-Z Elektronik GmbH

Germany . 9,900 parts In-Stock

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9,900

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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Assy Fe

Spain . 1,000 parts In-Stock

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Technical Specifications

Small Signal Field Effect Transistors (FET) 2SJ600-Z-E1-AZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

25 A

Maximum Drain Current (ID):

25 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

2SJ600-Z-E1-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Renesas Electronics

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