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2SJ601-AZ

Renesas Electronics

2SJ601-AZ by Renesas Electronics

2SJ601-AZ by Renesas Electronics is a P-CHANNEL FET with 60V DS breakdown voltage and 36A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it has a max power dissipation of 65W and can withstand temperatures up to 150°C.

Median Price

$6.040

Lifecycle Status

EOL

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4

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1k+

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Chip1Stop

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$6.040

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$5.890

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310

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$6.040

$5.890

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Nova Conductors

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$2.760

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Vyrian

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Aztec Data Supply Inc.

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$1.043

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Corohmni

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Advanced Electronics

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$1.804

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$1.642

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$1.479

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Continental Prestige Electronics

USA . 5,917 parts In-Stock

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$2.760

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$2.705

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Argo Parts USA

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$2.760

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Ampacity Inc.

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AZTECH Wire

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Perfect Parts

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Netroflash

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$2.705

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$2.622

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$2.567

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$2.567

Overview

Unlock the power of advanced technology with the 2SJ601-AZ by Renesas Electronics. This high-quality P-channel field-effect transistor offers exceptional performance in switching applications. With a maximum drain current of 36A and a minimum breakdown voltage of 60V, this transistor provides reliable and efficient operation. Its single configuration with a built-in diode makes it easy to integrate into your circuit design. Trust Renesas Electronics for top-of-the-line components that deliver unmatched value and performance. Elevate your projects with the 2SJ601-AZ and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and long-lasting performance.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplified design with built-in diode for added functionality.

Transistor Application: SWITCHING

Optimized for switching applications for improved performance.

Minimum DS Breakdown Voltage: 60 V

Suitable for applications requiring high breakdown voltage.

Package Shape: RECTANGULAR

Space-saving design for easy integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Convenient terminal form for ease of soldering and connectivity.

Operating Mode: ENHANCEMENT MODE

Efficient enhancement mode operation for enhanced performance.

Maximum Drain Current (Abs) (ID): 36 A

High maximum drain current for powerful operation.

Maximum Power Dissipation (Abs): 65 W

High power dissipation capability for robust performance.

Package Style (Meter): IN-LINE

Compact in-line package style for space-efficient design.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Advanced metal-oxide semiconductor technology for reliable operation.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatility in various environments.

Transistor Element Material: SILICON

High-quality silicon material for consistent performance.

Maximum Drain-Source On Resistance: 0.046 ohm

Low drain-source on resistance for efficient conduction.

Terminal Position: SINGLE

Single terminal position for simplified connectivity.

Maximum Time At Peak Reflow Temperature (s): 10

Short reflow time for quick and reliable assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature for proper soldering and assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2SJ601-AZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

36 A

Maximum Drain Current (ID):

36 A

Maximum Drain-Source On Resistance:

.046 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SJ601-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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