Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): CHIP CARRIER; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR;
Median Price
$0.044
Lifecycle Status
Suppliers In-Stock
15
In-Stock Inventory
1k+
Verical
1+ parts
-
100+ parts
1k+ parts
10k+ parts
Chip1Stop
$0.041
Arrow
$0.043
Rochester
$0.094
$0.078
$0.070
Digiode
$0.035
Nova Conductors
$0.085
Chip Stock
NAC Semi
$0.055
IBS Electronics
$0.042
Vyrian
VNN
Anansix
ComSIT Distribution GmbH
ComSIT USA
Bristol Electronics
Semicontronic
$0.027
$0.026
Ampacity Inc.
Corphita
$0.033
AZTECH Wire
$0.050
Argo Parts USA
$0.077
$0.074
Modulus Dynamics
$0.088
$0.087
$0.084
Continental Prestige Electronics
$0.282
$0.120
$0.054
$0.040
Advanced Electronics
$0.391
$0.372
Aztec Data Supply Inc.
$1.320
Corohmni
$1.626
Perfect Parts
Authorized Procurement Solutions
S.R.D Solutions
Eastek
Futuretech Components
Glotronic Ltd.
iodParts Technologies Inc.
Robosynatics
Lucentia Tech
$9.018
Supply Digital
UNI Independent Distributors
Lixinc
Netroflash
$0.083
$0.081
$0.079
Small Signal Field Effect Transistors (FET) BSS84AKM,315 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Nexperia
Additional Features:
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
BSS84AKM,315 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - All Dev Label Chgs 2/Aug/2020 Logo 10/Dec/2016
Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.
CEO
Xuezheng Zhang (Wing)
CFO
Stefan Tilger
COO
Achim Kempe
Hamburg
Fabrication
Fab Initiation
1981
Germany
Wafer Capacity
36,000
Manchester (8-inch line)
2017
Australia
Hazelgrove
12,000
Manchester (6-inch line)
1998
22,000
Shanghai Fab
2022
China
Shanghai
Nexperia Newport
UK
Newport
34,000
LL4148
Vishay Intertechnology
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
BAV99WT1G
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Rfe International
BSS138
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;
LM358N
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Weitron Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;
1N4148
American Power Devices
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM78L05ACMX/NOPB
Texas Instruments
LM78L05ACMX/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 0.1A. It operates b/w 0-125°C, has a dropout voltage of 1.6V, and can handle input voltages up to 30V making it ideal for various electronic applications requiring stable power supply.
LM107H/883
LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.
Vishay Telefunken
SMBJ18CA
STMicroelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Secos
CSNF651
Honeywell Sensing And Control
CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.
LM2931AZ-5.0RAG
Onsemi
LM2931AZ-5.0RAG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage, 0.1A max output current, and 0.6V max dropout voltage. Ideal for applications requiring stable voltage regulation in temperature-sensitive environments up to 150°C.
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
ERJ6ENF10R0V
Panasonic
Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.
USB2514BI-AEZG
Microchip Technology
USB2514BI-AEZG by Microchip is a BUS CONTROLLER IC with 36 terminals, operating at 3.3V, supporting I2C, SMBUS, and USB buses. It has a clock frequency of up to 24MHz and can withstand industrial temperatures from -40°C to 85°C. This chip carrier package is surface mountable and suitable for various applications requiring USB connectivity.
ABS25-32.768KHZ-T
Abracon
Abracon's ABS25-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency, such as IoT devices and precision timing systems in industrial settings.
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
BSS131E6327
Infineon Technologies
Infineon BSS131E6327 is a N-CHANNEL FET with 240V DS breakdown voltage, 0.11A drain current, and 14 ohm on-resistance. Ideal for small signal applications, it operates in enhancement mode with a max power dissipation of 0.36W. Its GULL WING terminals and compact design make it suitable for surface mount configurations.
LND150N3-GP013
LND150N3-GP013 by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, 0.03A ID, and 1000 ohm RDS(on). Ideal for switching applications, it operates in depletion mode with a max temp of 150°C. The transistor features a built-in diode and has a package style of cylindrical.
PMV65XP,215
NXP Semiconductors
PMV65XP,215 by NXP Semiconductors is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.9A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.076 ohm On Resistance. Package: PLASTIC/EPOXY, GULL WING terminals, and can handle up to 150°C temperature.
SI2347DS-T1-GE3
SI2347DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 5A, 0.042 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and peak reflow temperature of 260°C, it is suitable for various electronic devices requiring high power dissipation.
IRLML2502GTRPBF
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 33 A; JESD-609 Code: e3; Qualification: Not Qualified;
BSS84PWL6327
BSS84PWL6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage and 0.15A max drain current. Ideal for small outline applications, it features a built-in diode, 8 ohm max on resistance, and operates in enhancement mode at up to 150°C.
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
ZVP2106ASTZ
Diodes Incorporated
ZVP2106ASTZ by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 0.28A max drain current, and 5 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.7W at 150°C.
NDS331N
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Application: SWITCHING;
2N7002L
Temic Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .8 A; Terminal Position: DUAL; No. of Elements: 1;
NUD3124DMT1G
NUD3124DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. Operating in enhancement mode, it has a max ID of 0.15A and RDS(on) of 1.4 ohm. Ideal for switching applications due to its small outline package style and temp rating of 150°C.
MMBFJ201
MMBFJ201 by Onsemi is a N-CHANNEL FET with PLASTIC/EPOXY body, suitable for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and can handle up to 0.35W power dissipation. This SMALL OUTLINE transistor has a max operating temperature of 150°C and peak reflow temperature of 260°C.
FDN337N
Onsemi's FDN337N is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.2A, 0.065 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE. The PLASTIC/EPOXY package with GULL WING terminals can handle up to 150°C temperature, making it suitable for various electronic devices.
ZVP2106ASTOA
Zetex Plc
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Maximum Drain Current (ID): .28 A;
BSS84PH6433
BSS84PH6433 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A ID, and 8 ohm RDS(on). Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance.
BSS138NL6327
BSS138NL6327 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.23A drain current, and 3.5 ohm on-resistance. Ideal for small outline applications requiring a single transistor with built-in diode in enhancement mode operation. Suitable for use in automotive electronics due to AEC-Q101 reference standard compliance.
DMN6075S-7
DMN6075S-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 2A ID, and 0.085 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.15W. Its small outline package makes it suitable for surface mount designs at temperatures ranging from -55 to 150°C.
BSS806NH6327XTSA1
BSS806NH6327XTSA1 by Infineon is a N-CHANNEL FET with 20V DS breakdown voltage, 9.3A pulsed drain current, and 0.057ohm max on-resistance. Ideal for applications requiring small outline package style, it operates in enhancement mode with a max temperature of 150°C.
2N7002T
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; Terminal Finish: Matte Tin (Sn);
2N7002PW
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
PMEG120G20ELR
BAS16TH
PMH260UNE
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au);
NCR320U
LED DISPLAY DRIVER; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
MJD31CA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;
BUK7V4R2-40H
Power Field-Effect Transistors; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
BUK7S0R7-40H
Power Field-Effect Transistors; Terminal Finish: Tin (Sn); Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
PSMNR51-25YLH
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Terminal Finish: Tin (Sn);
PMEG050T150EIPD
PMEG060T050ELPE
NCR321PAS
LED DISPLAY DRIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 6; Package Code: HVSON; Package Shape: SQUARE;
PESD3V3T1BL
NXB0104BQ
BUS TRANSCEIVER; JESD-609 Code: e4; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au);
PNE20010ER
BCP56H
Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: Tin (Sn);
NCR420Z
LED DISPLAY DRIVER; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
GAN041-650WSB
Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin (Sn);
74AUP1G17GX4
BUFFER; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
MJD45H11
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
PMEG120G10ELR
BSS84-7-F
Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.
Spc Technology/ Multicomp
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
BSS84PH6327XTSA2
BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.
BSS83PH6327XTSA1
Infineon's BSS83PH6327XTSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage. It features SINGLE configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. Ideal for small outline applications requiring low on-resistance and high drain current up to 0.33A at temperatures ranging from -55°C to 150°C.
BSS84W-7-F
BSS84W-7-F by Diodes Inc. is a P-channel FET with 50V breakdown voltage and 0.13A drain current, ideal for switching applications. It features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.2W. This MOSFET comes in a small outline package with gull wing terminals, suitable for surface mount assembly at temperatures up to 150°C.
BSS84,215
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
NXP Semiconductors' BSS84,215 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.13A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.25W.
BSS84LT1G
BSS84LT1G by Onsemi is a P-CHANNEL FET with 50V DS breakdown voltage and 0.13A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.225W.
BSS84PWH6327XTSA1
BSS84PWH6327XTSA1 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, 8 ohm RDS(on), and 3.8pF Crss. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and ENHANCEMENT MODE operation at temperatures ranging from -55°C to 150°C.
BSS84AK,215
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
NXP Semiconductors' BSS84AK,215 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.18A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.14W.
BSS84
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
Lite-on Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain-Source On Resistance: 10 ohm; Terminal Form: GULL WING;
Jiangsu Changjiang Electronics Technology
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
General Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE; Additional Features: LOGIC LEVEL COMPATIBLE;
Changzhou Galaxy Century Microelectronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 50 V; Maximum Drain-Source On Resistance: 10 ohm;
Taitron Components
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 50 V;
Good-ark Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (ID): .13 A; Package Shape: RECTANGULAR;
Infinex
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Transistor Element Material: SILICON; No. of Terminals: 3;
Continental Device India
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JEDEC-95 Code: TO-236AB; Terminal Finish: MATTE TIN;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved