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Nexperia Small Signal Field Effect Transistors (FET) 16

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NX138AKSF by Nexperia

NX138AKSF

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

.17 A

4.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMV30UN2VL by Nexperia

PMV30UN2VL

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;

SINGLE WITH BUILT-IN DIODE

20 V

4.2 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMZ290UNEYL by Nexperia

PMZ290UNEYL

Nexperia

PMZ290UNEYL by Nexperia is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and 1.2A ID, 0.32 ohm RDS(on), in PLASTIC/EPOXY package suitable for ENHANCEMENT MODE operation.

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

1.2 A

.32 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

N-CHANNEL

IEC-60134

YES

NO LEAD

BOTTOM

SWITCHING

SILICON

2N7002CKVL by Nexperia

2N7002CKVL

Nexperia

Nexperia 2N7002CKVL is a N-CHANNEL FET with 60V DS breakdown voltage, 0.3A ID, and 1.6 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features GULL WING terminals, PLASTIC/EPOXY package, and operates b/w -55 to 150 °C.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.3 A

1.6 ohm

METAL-OXIDE SEMICONDUCTOR

7.5 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMV160UPVL by Nexperia

PMV160UPVL

Nexperia

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .21 ohm; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;

SINGLE WITH BUILT-IN DIODE

20 V

1.2 A

.21 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMV32UP/MIR by Nexperia

PMV32UP/MIR

Nexperia

PMV32UP/MIR by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 4A ID and 0.036 ohm RDS(ON), in a SMALL OUTLINE package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has a peak reflow temp of 260°C per IEC-60134 standard.

SINGLE WITH BUILT-IN DIODE

20 V

4 A

.036 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMV50UPEVL by Nexperia

PMV50UPEVL

Nexperia

PMV50UPEVL by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.2A ID. Ideal for SWITCHING applications, it features 0.066 ohm RDS(on) and operates in ENHANCEMENT MODE. This GULL WING package has METAL-OXIDE SEMICONDUCTOR technology and can withstand peak reflow at 260°C for 30s.

SINGLE WITH BUILT-IN DIODE

20 V

3.2 A

.066 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

IEC-60134

YES

GULL WING

DUAL

30

SWITCHING

SILICON

NX138BKVL by Nexperia

NX138BKVL

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;

SINGLE WITH BUILT-IN DIODE

60 V

.265 A

3.8 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMV48XP/MIR by Nexperia

PMV48XP/MIR

Nexperia

PMV48XP/MIR by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.5A and 0.055 ohm RDS(ON), in a SMALL OUTLINE package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has METAL-OXIDE SEMICONDUCTOR technology and SILICON element material.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

20 V

3.5 A

.055 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NX138BKSF by Nexperia

NX138BKSF

Nexperia

NX138BKSF by Nexperia is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is used for switching applications and features a max drain current of 0.21A and a max drain-source on resistance of 3.5 ohm.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

.21 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMN27UPH by Nexperia

PMN27UPH

Nexperia

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 5.7 A; Terminal Position: DUAL; Transistor Element Material: SILICON;

SINGLE WITH BUILT-IN DIODE

20 V

5.7 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

1

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

IEC-60134

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

PMN40UPEAX by Nexperia

PMN40UPEAX

Nexperia

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 4.7 A; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;

SINGLE WITH BUILT-IN DIODE

20 V

4.7 A

.072 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

1

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

PMT200EPEAX by Nexperia

PMT200EPEAX

Nexperia

PMT200EPEAX by Nexperia is a P-CHANNEL FET with 70V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.4A ID and 0.167 ohm RDS(ON), operating in ENHANCEMENT MODE. This SMALL OUTLINE transistor has GULL WING terminals and DUAL position, suitable for various electronic designs.

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

70 V

2.4 A

.167 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

1

4

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

PMCM650VNEZ by Nexperia

PMCM650VNEZ

Nexperia

PMCM650VNEZ by Nexperia is a N-CHANNEL FET with 6.4A ID and 0.032 ohm RDS(on), ideal for SWITCHING applications. It features a 12V DS breakdown voltage, SILICON transistor element, and ENHANCEMENT MODE operation in a GRID ARRAY package.

SINGLE WITH BUILT-IN DIODE

12 V

6.4 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBGA-B6

1

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

N-CHANNEL

IEC-60134

YES

BALL

BOTTOM

SWITCHING

SILICON

PMDT290UNEYL by Nexperia

PMDT290UNEYL

Nexperia

PMDT290UNEYL by Nexperia is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 20V, Max Drain Current of 0.8A, and Max Drain-Source On Resistance of 0.38 ohm. This small outline transistor operates in ENHANCEMENT MODE and is surface mountable.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

.8 A

.38 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

PMV65UNEAR by Nexperia

PMV65UNEAR

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Transistor Element Material: SILICON; JESD-609 Code: e3;

SINGLE WITH BUILT-IN DIODE

20 V

2.8 A

.073 ohm

METAL-OXIDE SEMICONDUCTOR

43 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

6.25 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON