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PMZ290UNEYL

Nexperia

PMZ290UNEYL by Nexperia

PMZ290UNEYL by Nexperia is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and 1.2A ID, 0.32 ohm RDS(on), in PLASTIC/EPOXY package suitable for ENHANCEMENT MODE operation.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 108,000 parts In-Stock

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Vyrian

USA . 16,965 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Aztec Data Supply Inc.

USA . 2,174 parts In-Stock

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$0.380

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$0.468

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$0.426

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$0.384

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$0.468

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AZTECH Wire

Italy . 14,424 parts In-Stock

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$6.516

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Ampacity Inc.

Singapore . 1,094 parts In-Stock

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$7.050

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Semicontronic

India . 209 parts In-Stock

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$32.050

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$31.249

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$31.088

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Perfect Parts

USA . 67,200 parts In-Stock

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Microchip USA

USA . 4,390 parts In-Stock

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Continental Prestige Electronics

USA . 1,211 parts In-Stock

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Supply Digital

USA . 608 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Enhance your electronics projects with the PMZ290UNEYL from Nexperia, a top-quality N-CHANNEL Small Signal Field Effect Transistor with a built-in diode. Perfect for switching applications, this chip carrier-style transistor offers a low on-resistance and high drain current capacity, ensuring optimal performance. Trust Nexperia's expertise in semiconductor technology to deliver a reliable product that meets IEC standards. Upgrade your designs with the PMZ290UNEYL and experience enhanced efficiency and functionality in your circuits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have higher mobility and conductivity compared to P-channel transistors, allowing for efficient operation.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and protects against reverse current flow, enhancing the overall efficiency and reliability of the product.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast on/off transitions and efficient performance in control circuits.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 20 V

The minimum breakdown voltage of 20V ensures reliable operation and protection against voltage spikes, making it suitable for a wide range of applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and low power consumption, making the transistor energy efficient and reliable.

Maximum Drain Current (ID): 1.2 A

The high maximum drain current of 1.2A allows for handling of higher power loads, making it suitable for applications requiring higher current capacity.

Maximum Drain-Source On Resistance: 0.32 ohm

The low drain-source on resistance of 0.32 ohms reduces power loss and heat generation, improving the overall efficiency of the product.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMZ290UNEYL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Nexperia

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

1.2 A

Maximum Drain-Source On Resistance:

.32 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PBCC-N3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Polarity or Channel Type:

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMZ290UNEYL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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