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MJD44H11A

Nexperia

MJD44H11A by Nexperia

The Nexperia MJD44H11A is a NPN BJT transistor with VCEsat of 1V, hFE of 40, and IC of 8A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 80V. With a package style of small outline and surface mount capability, it offers high performance in power electronics.

Median Price

$0.413

Lifecycle Status

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3

In-Stock Inventory

1k+

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Element14

Singapore . 2,626 parts In-Stock

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$0.413

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$0.250

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2,626

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$0.413

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Chip Stock

USA . 61,000 parts In-Stock

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Vyrian

USA . 5,089 parts In-Stock

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5,089

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Distributors (Availability)

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AZTECH Wire

Italy . 2,834 parts In-Stock

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$0.410

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$0.410

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Supply Digital

USA . 2,710 parts In-Stock

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iodParts Technologies Inc.

India . 2,549 parts In-Stock

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$0.296

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Continental Prestige Electronics

USA . 445 parts In-Stock

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$0.368

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$0.233

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$0.219

445

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Overview

Unleash the power of innovation with Nexperia's MJD44H11A Power Bipolar Junction Transistor. Designed for high-performance switching applications, this NPN transistor offers unparalleled value and reliability. With a maximum collector-emitter voltage of 80V and a minimum DC current gain of 40, this transistor delivers efficient power dissipation up to 20W. Whether you're designing automotive electronics or industrial controls, the MJD44H11A is the perfect choice for your next project. Trust Nexperia for quality components that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and long-term reliability of the transistor.

Polarity or Channel Type: NPN

NPN type is commonly used in switching applications making it versatile for a variety of uses.

Configuration: SINGLE

Single configuration simplifies circuit design and integration.

Transistor Application: SWITCHING

Designed specifically for fast switching applications, making it efficient and responsive.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly.

Maximum VCEsat: 1 V

Low VCEsat reduces power losses and improves overall efficiency of the transistor.

Package Shape: RECTANGULAR

Rectangular shape enables easy placement and routing on PCBs.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections during assembly.

No. of Terminals: 2

Having only 2 terminals simplifies circuit connections and reduces chances of errors.

Maximum Power Dissipation: 20 W

High power dissipation capability allows for handling more power in demanding applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and enables denser PCB layouts.

Minimum DC Current Gain (hFE): 40

A high minimum DC current gain ensures stable and consistent performance in various operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures reliability in harsh environments.

Maximum Collector-Base Capacitance: 30 pF

Low collector-base capacitance reduces chances of parasitic oscillations and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating allows for handling higher voltage levels.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in transistor applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in cold environments or during startup conditions.

Maximum Collector Current (IC): 8 A

High maximum collector current rating enables handling of larger currents in the circuit.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and reduces chances of errors.

Case Connection: COLLECTOR

Collector case connection simplifies circuit layout and provides efficient heat dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

30 seconds maximum time at peak reflow temperature ensures proper soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable and robust solder joints during assembly.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability of the product.

Nominal Transition Frequency (fT): 160 MHz

High nominal transition frequency indicates fast response and switching speed of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD44H11A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Base Capacitance:

30 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

MJD44H11A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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