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SINGLE Power Bipolar Junction Transistors (BJT) 418

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZTX718STOA by Diodes Incorporated

ZTX718STOA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1.5 W

NO

WIRE

SINGLE

SILICON

180 MHz

.26 V

ZTX718STOB by Diodes Incorporated

ZTX718STOB

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1.5 W

NO

WIRE

SINGLE

SILICON

180 MHz

.26 V

ZTX718STZ by Diodes Incorporated

ZTX718STZ

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

1 W

1.5 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

180 MHz

.26 V

ZTX618STOA by Diodes Incorporated

ZTX618STOA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3.5 A;

3.5 A

30 pF

20 V

SINGLE

40

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1.5 W

NO

WIRE

SINGLE

SILICON

140 MHz

.255 V

ZTX618STOB by Diodes Incorporated

ZTX618STOB

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3.5 A;

3.5 A

30 pF

20 V

SINGLE

40

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1.5 W

NO

WIRE

SINGLE

SILICON

140 MHz

.255 V

ZTX618STZ by Diodes Incorporated

ZTX618STZ

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3.5 A;

3.5 A

30 pF

20 V

SINGLE

40

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1.5 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

140 MHz

.255 V

2SD1803T-TL-E by Onsemi

2SD1803T-TL-E

Onsemi

2SD1803T-TL-E by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 5A. It is commonly used for switching applications due to its low VCEsat of 0.55V and high transition frequency of 130MHz.

COLLECTOR

5 A

60 pF

50 V

SINGLE

35

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

20 W

Other Transistors

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON

130 MHz

.55 V

FZT560QTC by Diodes Incorporated

FZT560QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .15 A; Maximum Collector-Emitter Voltage: 500 V;

COLLECTOR

.15 A

500 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

60 MHz

STD878T4 by STMicroelectronics

STD878T4

STMicroelectronics

STD878T4 by STMicroelectronics is a NPN Power BJT with 30V VCEO, 5A IC, and 15W Ptot. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating up to 150 °C, it offers a min hFE of 70 and matte tin finish.

COLLECTOR

5 A

30 V

SINGLE

70

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

2STL2580 by STMicroelectronics

2STL2580

STMicroelectronics

2STL2580 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 1A. It has a min. DC current gain of 60, suitable for switching applications with a max. power dissipation of 1.5W in cylindrical package style for through-hole mounting at up to 150 °C operating temperature.

1 A

400 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STFN42 by STMicroelectronics

STFN42

STMicroelectronics

STFN42 by STMicroelectronics is a NPN BJT transistor with 400V VCE, 1A IC, and 1.4W power dissipation. It's used for switching applications in a small outline package with matte tin terminals, operating up to 150 °C.

COLLECTOR

1 A

400 V

SINGLE

5

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.4 W

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

STX0560 by STMicroelectronics

STX0560

STMicroelectronics

STX0560 by STMicroelectronics is a NPN BJT transistor with 600V VCE, 1A IC, and 1.5W power dissipation. Ideal for switching applications due to its single configuration in a cylindrical package with matte tin finish.

1 A

600 V

SINGLE

70

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

BCP5316TA by Diodes Incorporated

BCP5316TA

Diodes Incorporated

BCP5316TA by Diodes Inc. is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 100, and can handle up to 1A IC. With a max operating temp of 150°C, it's ideal for automotive electronics due to AEC-Q101 compliance.

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

FZT751QTC by Diodes Incorporated

FZT751QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

HIGH RELIABILITY

COLLECTOR

3 A

60 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

NJVMJD32CG by Onsemi

NJVMJD32CG

Onsemi

NJVMJD32CG by Onsemi is a PNP BJT with 15W power dissipation, 3A collector current, and 150°C max operating temp. Ideal for automotive applications due to AEC-Q101 standard compliance and 3MHz transition frequency.

3 A

SINGLE

10

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

3 MHz

NJVMJD45H11RLG by Onsemi

NJVMJD45H11RLG

Onsemi

NJVMJD45H11RLG by Onsemi is a PNP BJT transistor for switching applications. It has a max collector-emitter voltage of 80V, max collector current of 8A, and min DC current gain of 40. Suitable for small outline packages in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

20 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

90 MHz

SBCP68T1G by Onsemi

SBCP68T1G

Onsemi

SBCP68T1G by Onsemi is a NPN BJT transistor with VCEsat of 0.5V, hFE of 60, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and small outline package style. Operating temperature range from -65 to 150°C makes it suitable for various environments.

COLLECTOR

1 A

20 V

SINGLE

60

TO-261

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

60 MHz

.5 V

NJVMJB41CT4G by Onsemi

NJVMJB41CT4G

Onsemi

NJVMJB41CT4G by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high operating temperature range of -65°C to 150°C. Package style is small outline with gull wing terminals for surface mount assembly.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

65 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

ZX5T953GQTA by Diodes Incorporated

ZX5T953GQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 100 V;

HIGH RELIABILITY

COLLECTOR

5 A

100 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

125 MHz

2STD2360T4 by STMicroelectronics

2STD2360T4

STMicroelectronics

2STD2360T4 by STMicroelectronics is a PNP BJT transistor for switching applications. With 3A max collector current, 60V max collector-emitter voltage, and 15W max power dissipation, it operates at up to 150 °C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

COLLECTOR

3 A

60 V

SINGLE

160

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

130 MHz

2STN2340 by STMicroelectronics

2STN2340

STMicroelectronics

2STN2340 by STMicroelectronics is a PNP BJT transistor with 4 terminals. It has a max power dissipation of 1.6W, hFE of 180, and operates up to 150 °C. Ideal for switching applications due to its max collector-emitter voltage of 40V and max collector current of 3A.

COLLECTOR

3 A

40 V

SINGLE

180

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2STL2580-AP by STMicroelectronics

2STL2580-AP

STMicroelectronics

2STL2580-AP by STMicroelectronics is a NPN BJT with 1A IC, 60 hFE, and 1.5W Pd. Ideal for power applications, it operates up to 150 °C making it suitable for various electronic designs requiring high current amplification in a single configuration.

1 A

SINGLE

60

1

150 Cel

NPN

1.5 W

Other Transistors

NO

BD135TG by Onsemi

BD135TG

Onsemi

The Onsemi BD135TG is a NPN BJT with max power dissipation of 1.25W, hFE of 40, and IC of 1.5A. Ideal for power applications where a single configuration is needed, operating up to 150 °C.

1.5 A

SINGLE

40

e3

1

150 Cel

NPN

1.25 W

Other Transistors

NO

MATTE TIN

3STF1640 by STMicroelectronics

3STF1640

STMicroelectronics

3STF1640 by STMicroelectronics is a NPN BJT transistor with 40V VCEO, 6A IC, and 1.5W Ptot. Ideal for switching applications, it has a hFE of min. 20 and fT of 100MHz. Its small outline package makes it suitable for surface mount designs in various electronic devices.

COLLECTOR

6 A

40 V

SINGLE

20

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

FZT951QTC by Diodes Incorporated

FZT951QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY

COLLECTOR

5 A

60 V

SINGLE

10

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

120 MHz

FZT953QTA by Diodes Incorporated

FZT953QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 5 A; Reference Standard: AEC-Q101;

HIGH RELIABILITY

COLLECTOR

5 A

100 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

125 MHz

TTC3710B by Toshiba

TTC3710B

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 12 A;

ISOLATED

12 A

80 V

SINGLE

40

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

80 MHz

BCP5416QTA by Diodes Incorporated

BCP5416QTA

Diodes Incorporated

Diodes Inc. BCP5416QTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 25, and IC of 1A. With a max operating temp of 150°C, it's ideal for automotive electronics meeting AEC-Q101 and IATF 16949 standards.

COLLECTOR

1 A

25 pF

45 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101; IATF 16949

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

IGB01N120H2ATMA1 by Infineon Technologies

IGB01N120H2ATMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3.2 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 1200 V;

COLLECTOR

3.2 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

BCP55E6327HTSA1 by Infineon Technologies

BCP55E6327HTSA1

Infineon Technologies

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;

COLLECTOR

SINGLE

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

IGD01N120H2BUMA1 by Infineon Technologies

IGD01N120H2BUMA1

Infineon Technologies

Infineon's IGD01N120H2BUMA1 is a NPN BJT transistor with 1200V VCE, 3.2A IC, and 150°C max operating temp. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

COLLECTOR

3.2 A

1200 V

SINGLE

TO-252AA

R-PSSO-G2

e3

3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IGP01N120H2XKSA1 by Infineon Technologies

IGP01N120H2XKSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.2 A; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Terminal Position: SINGLE;

COLLECTOR

3.2 A

1200 V

SINGLE

TO-220AB

R-PSFM-T3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BD438TG by Onsemi

BD438TG

Onsemi

The Onsemi BD438TG is a PNP BJT with max power dissipation of 36W, hFE of 85, and IC of 4A. Ideal for applications requiring high-power amplification in temperature range -55 to 150°C. Suitable for single configuration setups needing reliable performance with fT of 3MHz.

4 A

SINGLE

85

e3

1

150 Cel

-55 Cel

PNP

36 W

Other Transistors

NO

MATTE TIN

3 MHz

APT13005SI-G1 by Diodes Incorporated

APT13005SI-G1

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 3.2 A; Minimum Operating Temperature: -65 Cel;

3.2 A

450 V

SINGLE

11

TO-251

R-PSIP-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005STF-G1 by Diodes Incorporated

APT13005STF-G1

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 3.2 A; Minimum Operating Temperature: -65 Cel;

ISOLATED

3.2 A

450 V

SINGLE

11

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005SU-G1 by Diodes Incorporated

APT13005SU-G1

Diodes Incorporated

Diodes Inc.'s APT13005SU-G1 is a NPN BJT transistor with max. collector-emitter voltage of 450V, ideal for switching applications. With a max. collector current of 3.2A and transition frequency of 4MHz, it operates b/w -65 to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.

3.2 A

450 V

SINGLE

11

TO-126

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

FZT749QTA by Diodes Incorporated

FZT749QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

100 pF

25 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

160 MHz

.6 V

FZT749QTC by Diodes Incorporated

FZT749QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

100 pF

25 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

160 MHz

.6 V

2SB1203S-H by Onsemi

2SB1203S-H

Onsemi

The Onsemi 2SB1203S-H is a NPN BJT transistor with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. With a power dissipation of 20W, it's suitable for various power electronics designs.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

20 W

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

2SB1203S-TL-H by Onsemi

2SB1203S-TL-H

Onsemi

The Onsemi 2SB1203S-TL-H is a NPN Power BJT for switching applications. Features include VCEsat of 0.4V, IC of 5A, and hFE of 35. With a max operating temperature of 150°C, it's ideal for high-power switching circuits in various electronic devices.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1 W

20 W

YES

TIN BISMUTH

GULL WING

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

2SB1203T-TL-H by Onsemi

2SB1203T-TL-H

Onsemi

Onsemi's 2SB1203T-TL-H is a NPN BJT transistor with VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications, it has a max operating temp of 150 °C and fT of 180MHz. With GULL WING terminals in a SMALL OUTLINE package, it offers high power dissipation at 20W.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1 W

20 W

YES

TIN BISMUTH

GULL WING

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

2SD1803T-H by Onsemi

2SD1803T-H

Onsemi

The Onsemi 2SD1803T-H is a PNP BJT transistor with VCEsat of 0.55V, IC of 5A, and hFE of 35. Ideal for switching applications, it has a max power dissipation of 20W and operates at temperatures up to 150°C. The package style is in-line with through-hole terminals.

COLLECTOR

5 A

60 pF

50 V

SINGLE

35

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

20 W

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

130 MHz

.55 V

BCP6925E6327HTSA1 by Infineon Technologies

BCP6925E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Terminal Position: DUAL;

COLLECTOR

1 A

20 V

SINGLE

160

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BCP5610E6327HTSA1 by Infineon Technologies

BCP5610E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

63

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP5616E6327HTSA1 by Infineon Technologies

BCP5616E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCX5216E6327HTSA1 by Infineon Technologies

BCX5216E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH: 1000

COLLECTOR

1 A

60 V

SINGLE

100

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

AEC-Q101

YES

FLAT

SINGLE

AMPLIFIER

SILICON

125 MHz

.5 V

BDP947E6327HTSA1 by Infineon Technologies

BDP947E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

45 V

SINGLE

50

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BDP949E6327HTSA1 by Infineon Technologies

BDP949E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

60 V

SINGLE

50

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V