Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NJVMJD45H11RLG by Onsemi is a PNP BJT transistor for switching applications. It has a max collector-emitter voltage of 80V, max collector current of 8A, and min DC current gain of 40. Suitable for small outline packages in automotive electronics due to AEC-Q101 compliance.
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Provides good insulation and protection for the transistor, making it durable and less prone to damage.
Allows for easy integration into PNP circuit designs, providing flexibility in usage.
Simplifies circuit design and improves reliability by reducing complexity.
Designed for efficient switching applications, making it suitable for various electronics projects.
Enables easy and secure mounting on PCBs, saving space and improving mechanical stability.
Can handle high power levels without overheating, ensuring reliable performance under demanding conditions.
Suitable for applications requiring higher voltage levels, providing versatility in circuit design.
Capable of handling high currents, making it ideal for power applications or high-performance circuits.
Provides high switching speeds, allowing for fast operation in switching applications.
Power Bipolar Junction Transistors (BJT) NJVMJD45H11RLG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi
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No. of Terminals:
Maximum Operating Temperature:
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NJVMJD45H11RLG Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev ASSY 07/Sep/2023
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N2222A
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N7002
Calogic
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;
1N4148
Diotec Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LL4148
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;
M24308/2-1F
Amphenol
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body or Shell Style: RECEPTACLE; Body Length: 1.228 inch; No. of Rows Loaded: 2;
North American Philips Discrete Products Div
RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V; Terminal Finish: Tin/Lead (Sn/Pb);
BAV99
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
LM107H/883C
National Semiconductor
LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.
LM358MX
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LM107H/883
Linear Technology
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
CRG0805F10K
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SPC TECHNOLOGY/ MULTICOMP
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Weitronic Enterprise
2N7002-T1-E3
Vishay Intertechnology
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
Micro Commercial Components
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
261
Mercury Systems
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
LM2931AZ-5.0G
Onsemi
LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.
BD679
BD679 by Onsemi is a NPN Power BJT with 40W power dissipation, ideal for amplifier applications. Featuring a Darlington configuration, it has hFE of 750 and can handle up to 80V collector-emitter voltage. This transistor operates at temperatures up to 150°C in a through-hole package style.
BUV48A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
ULN2803AN-P
Texas Instruments
Power Bipolar Transistors; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;
TIP42C
General Transistor
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BCP5616H6327XTSA1
Infineon Technologies
Infineon's BCP5616H6327XTSA1 is a NPN BJT transistor with 80V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a hFE of 100, operates up to 150°C, and comes in a small outline package.
TIP111
Bourns
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON;
TIP31C
Solid State Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
2N3055
Swampscott Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BDW93C
Samsung
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY;
TIP122
Kec
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP120
TIP120 by Texas Instruments is a NPN Darlington transistor with max VCEsat of 4V and hFE of 1000. Ideal for switching applications, it has a max IC of 5A and can handle up to 65W power dissipation. With a max operating temp of 150°C, it's commonly used in power control circuits.
MJD31CT4
MJD31CT4 by Onsemi is a NPN BJT transistor with 15W power dissipation, 100V max collector-emitter voltage, and 3A max collector current. Ideal for amplifier applications, it has a small outline package style and operates up to 150°C. With a transition frequency of 3MHz, it is suitable for surface mount designs.
TIP147T
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Terminal Position: SINGLE;
Vpt Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD679A
BD679A by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications, it features a built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, this transistor has a max collector current of 4A and transition frequency of 10MHz.
TIP50
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP42A
Semiconductors
2SC5200O
Unisonic Technologies
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Collector Current (IC): 8 A; JEDEC-95 Code: TO-220AB;
2N2905A
Central Semiconductor
PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .6 A; Transistor Application: SWITCHING;
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NJVMJD31CT4G
NJVMJD31CT4G by Onsemi is a NPN BJT with 100V VCEO, 3A IC, and 15W Ptot. Ideal for automotive applications due to AEC-Q101 compliance and -65 to 150°C operating range. Suitable for surface mount designs with GULL WING terminals in a small outline package.
NJVMJD31CT4G-VF01
NJVMJD31CT4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 10, VCEO of 100V, and IC of 3A. Ideal for amplifier applications, it operates b/w -65 to 150°C and has a transition frequency of 3MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.
NJVMJD127T4G
NJVMJD127T4G by Onsemi is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has 100V VCEO, 8A IC, and 20W power dissipation. Ideal for amplifier applications due to its high hFE of 100 and operating temperature range from -65 to 150°C.
NJVMJD44H11T4G
NJVMJD44H11T4G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates b/w -55 to 150°C. This small outline package with Gull Wing terminals is AEC-Q101 compliant.
NJVMJD122T4G
NJVMJD122T4G by Onsemi is a NPN Darlington BJT with built-in diode and resistor, ideal for amplifier applications. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. With a package style of small outline and surface mount capability, it operates b/w -65 to 150°C.
NJVMJD44H11G
NJVMJD44H11G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of min. 40 and operates up to 150°C. Suitable for surface mount designs in automotive electronics (AEC-Q101 compliant).
NJVMJD122T4G-VF01
NJVMJD122T4G-VF01 by Onsemi is a NPN BJT with Darlington configuration, hFE of 100, and VCE of 100V. Ideal for amplifier applications, it operates b/w -65 to 150°C with IC up to 8A. Suitable for surface mount with Gull Wing terminals in a small outline package.
NJVMJD340T4G
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): .5 A;
NJVMJD112T4G
NJVMJD112T4G by Onsemi is a NPN Darlington BJT with 100V VCEO, 2A IC, and 20W Ptot. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency of 25MHz. Suitable for power management in compact designs with small outline package style.
NJVMJD117T4G
NJVMJD117T4G by Onsemi is a PNP BJT with Darlington configuration. Features 100V VCEO, 2A IC, and 20W power dissipation. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency of 25MHz.
NJVMJD44H11T4G-VF01
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 85 MHz; Maximum Collector Current (IC): 8 A; Minimum Operating Temperature: -65 Cel;
NJVMJD32CT4G-VF01
NJVMJD32CT4G-VF01 by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 3A. It is commonly used as an amplifier in various applications due to its small outline package style, high transition frequency of 3MHz, and wide operating temperature range from -65°C to 150°C.
NJVMJD32CT4G
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;
NJVMJD340T4G-VF01
NJVMJD340T4G-VF01 by Onsemi is a NPN BJT transistor for switching applications. It has hFE of 30, VCEO of 300V, and IC of 0.5A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and high operating temperature range from -65 to 150°C.
NJVMJD45H11T4G
NJVMJD45H11T4G by Onsemi is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it operates b/w -55 to 150°C. Its small outline package and high transition frequency of 90MHz make it suitable for various electronic designs.
NJVMJD31CG
NJVMJD31CG by Onsemi is a Power BJT with SILICON element. It comes in a RECTANGULAR PLASTIC package with GULL WING terminals for SMT. AEC-Q101 certified, it's ideal for automotive applications due to its high-temperature tolerance up to 260°C and small outline design.
NJVMJD45H11G
NJVMJD45H11G by Onsemi is a PNP BJT transistor for switching applications. With hFE of 40, it supports max VCE of 80V and IC of 8A. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs in automotive electronics.
NJVMJD44H11RLG
NJVMJD44H11RLG by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it operates up to 150°C and has an hFE of at least 40. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance.
NJVMJD50T4G
NJVMJD50T4G by Onsemi is a NPN BJT transistor with max. Vce of 400V, Ic of 1A, and hFE of 10. Ideal for switching applications, it operates b/w -65 to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
NJVMJD47T4G
NJVMJD47T4G by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 250V, max operating temp of 150°C, and max power dissipation of 15W. With a small outline package style, it's ideal for high-power switching circuits in automotive electronics.
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