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NJVMJD45H11T4G

Onsemi

NJVMJD45H11T4G by Onsemi

NJVMJD45H11T4G by Onsemi is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it operates b/w -55 to 150°C. Its small outline package and high transition frequency of 90MHz make it suitable for various electronic designs.

Median Price

$0.748

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 70 parts In-Stock

1+ parts

$0.526

100+ parts

$0.500

1k+ parts

$0.500

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70

$0.526

$0.500

$0.500

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Arrow

USA . 90,000 parts In-Stock

1+ parts

$0.748

100+ parts

$0.534

1k+ parts

$0.338

10k+ parts

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90,000

$0.748

$0.534

$0.338

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Newark

USA . 2,653 parts In-Stock

1+ parts

$1.530

100+ parts

$0.645

1k+ parts

$0.460

10k+ parts

-

2,653

$1.530

$0.645

$0.460

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DigiKey

USA . 1,066 parts In-Stock

1+ parts

$1.580

100+ parts

$0.663

1k+ parts

$0.473

10k+ parts

-

1,066

$1.580

$0.663

$0.473

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Mouser Electronics

USA . 98 parts In-Stock

1+ parts

$1.580

100+ parts

$0.663

1k+ parts

$0.474

10k+ parts

$0.370

98

$1.580

$0.663

$0.474

$0.370

Rochester

USA . 117,500 parts In-Stock

1+ parts

-

100+ parts

$0.474

1k+ parts

$0.393

10k+ parts

$0.351

117,500

-

$0.474

$0.393

$0.351

Verical

USA . 117,500 parts In-Stock

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-

100+ parts

-

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$0.492

10k+ parts

$0.439

117,500

-

-

$0.492

$0.439

Flip Electronics (Authorized)

USA . 10,000 parts In-Stock

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Farnell

UK . 2,653 parts In-Stock

1+ parts

-

100+ parts

$0.537

1k+ parts

$0.353

10k+ parts

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2,653

-

$0.537

$0.353

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Element14

Singapore . 2,653 parts In-Stock

1+ parts

-

100+ parts

$0.859

1k+ parts

$0.613

10k+ parts

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2,653

-

$0.859

$0.613

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,712 parts In-Stock

1+ parts

$0.369

100+ parts

-

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1,712

$0.369

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.489

100+ parts

-

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150

$0.489

-

-

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Bristol Electronics

USA . 26,362 parts In-Stock

1+ parts

$0.938

100+ parts

$0.347

1k+ parts

$0.244

10k+ parts

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26,362

$0.938

$0.347

$0.244

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Sensible Micro Corp

USA . 77,743 parts In-Stock

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77,743

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Chip Stock

USA . 63,000 parts In-Stock

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63,000

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Vyrian

USA . 62,547 parts In-Stock

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62,547

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Dan-Mar Components

USA . 25,000 parts In-Stock

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25,000

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Cyclops Electronics Ltd

UK . 19,280 parts In-Stock

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19,280

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Flip Electronics

USA . 10,000 parts In-Stock

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10,000

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NAC Semi

USA . 5,000 parts In-Stock

1+ parts

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$0.500

5,000

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$0.500

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 62,703 parts In-Stock

1+ parts

$0.330

100+ parts

$0.322

1k+ parts

$0.320

10k+ parts

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62,703

$0.330

$0.322

$0.320

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Ampacity Inc.

Singapore . 62,563 parts In-Stock

1+ parts

$0.330

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62,563

$0.330

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Corphita

USA . 1,573 parts In-Stock

1+ parts

$0.349

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1,573

$0.349

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Corohmni

South Africa . 449 parts In-Stock

1+ parts

$0.375

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449

$0.375

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Argo Parts USA

USA . 3,873 parts In-Stock

1+ parts

$0.444

100+ parts

-

1k+ parts

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10k+ parts

$0.431

3,873

$0.444

-

-

$0.431

Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.526

100+ parts

$0.500

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$0.500

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70

$0.526

$0.500

$0.500

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Aztec Data Supply Inc.

USA . 2,075 parts In-Stock

1+ parts

$0.759

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2,075

$0.759

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Perfect Parts

USA . 1,309,694 parts In-Stock

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1,309,694

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Continental Prestige Electronics

USA . 217,500 parts In-Stock

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$0.470

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217,500

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$0.470

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GreenTree Electronics

Israel . 97,700 parts In-Stock

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97,700

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RC Electronics

USA . 83,970 parts In-Stock

1+ parts

-

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$0.550

1k+ parts

$0.500

10k+ parts

$0.490

83,970

-

$0.550

$0.500

$0.490

Authorized Procurement Solutions

USA . 60,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,525 parts In-Stock

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ChipstoGo Electronic ltd

UK . 20,000 parts In-Stock

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Lixinc

USA . 6,508 parts In-Stock

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6,508

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SupplyDigital Components

Austria . 5,267 parts In-Stock

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5,267

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Problanco Electronics

Mexico . 2,592 parts In-Stock

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2,592

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iodParts Technologies Inc.

India . 2,144 parts In-Stock

1+ parts

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$0.519

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2,144

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-

$0.519

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Component Connect

USA . 1,753 parts In-Stock

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1,753

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Kulean Microsystems

USA . 898 parts In-Stock

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898

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UHIMA Technologies

Türkiye . 544 parts In-Stock

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544

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Robosynatics

Brazil . 200 parts In-Stock

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200

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Lucentia Tech

USA . 200 parts In-Stock

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200

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Bastille Electronics

Australia . 67 parts In-Stock

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67

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TANS Electronics

Latvia . 22 parts In-Stock

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22

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Overview

Enhance your power management solutions with the NJVMJD45H11T4G by Onsemi. Crafted with precision and expertise, this PNP Power BJT transistor offers high-quality performance for switching applications. With a maximum collector-emitter voltage of 80V and a maximum operating temperature of 150°C, this transistor ensures reliable operation even in challenging environments. Whether you're looking to optimize efficiency in automotive electronics or industrial controls, this transistor's small outline package and high DC current gain make it a valuable asset for your projects. Trust Onsemi for superior quality and performance that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits requiring PNP transistors, offering compatibility and flexibility.

Configuration: SINGLE

Single configuration simplifies circuit design and makes installation straightforward.

Transistor Application: SWITCHING

Designed for switching applications, providing efficient on/off control for various electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on circuit boards, enabling compact and space-saving designs.

Package Shape: RECTANGULAR

Rectangular shape offers ease of handling and placement in circuit layouts.

Terminal Form: GULL WING

Gull wing terminal form facilitates secure soldering and connection, ensuring reliable performance.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability enables the transistor to handle larger loads and operate efficiently in demanding conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style enhances space efficiency and allows for compact circuit designs.

Minimum DC Current Gain (hFE): 40

High DC current gain ensures stable and consistent amplification performance in various applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function reliably in diverse environmental conditions.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating provides safety and reliability in high-voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for the transistor's semiconductor element.

Minimum Operating Temperature: -55 °C

Low operating temperature ensures the transistor can function in cold environments without performance degradation.

Maximum Collector Current (IC): 8 A

High collector current capability allows the transistor to handle heavy loads and high current applications.

Terminal Finish: MATTE TIN

Matte Tin finish provides excellent solderability and corrosion resistance for long-lasting performance.

Terminal Position: SINGLE

Single terminal position simplifies installation and connections in circuit layouts.

Case Connection: COLLECTOR

Collector case connection offers easy and reliable connection to the circuit, ensuring proper function and performance.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time ensures the reliability of solder joints and prevents overheating during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability allows for efficient and reliable soldering during assembly.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Nominal Transition Frequency (fT): 90 MHz

High transition frequency allows for fast switching speeds and efficient performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD45H11T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJD45H11T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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