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NJVMJD44H11G

Onsemi

NJVMJD44H11G by Onsemi

NJVMJD44H11G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of min. 40 and operates up to 150°C. Suitable for surface mount designs in automotive electronics (AEC-Q101 compliant).

Median Price

$0.398

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 6,910 parts In-Stock

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6,910

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DigiKey

USA . 2,910 parts In-Stock

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$0.280

2,910

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$0.280

Verical

USA . 2,475 parts In-Stock

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$0.352

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2,475

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$0.352

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Chip1Stop

Japan . 1,200 parts In-Stock

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$0.490

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$0.434

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$0.369

1,200

-

$0.490

$0.434

$0.369

Arrow

USA . 75 parts In-Stock

1+ parts

-

100+ parts

$0.443

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$0.391

10k+ parts

$0.336

75

-

$0.443

$0.391

$0.336

Distributors (In-Stock)

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Nova Conductors

Japan . 750 parts In-Stock

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$1.000

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750

$1.000

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Digiode

USA . 1,215 parts In-Stock

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$1.121

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$1.121

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Chip Stock

USA . 72,000 parts In-Stock

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Flip Electronics

USA . 2,910 parts In-Stock

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2,910

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Vyrian

USA . 1,736 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 1,681 parts In-Stock

1+ parts

$0.416

100+ parts

$0.406

1k+ parts

$0.404

10k+ parts

-

1,681

$0.416

$0.406

$0.404

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Ampacity Inc.

Singapore . 1,336 parts In-Stock

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$0.416

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1,336

$0.416

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Argo Parts USA

USA . 3,667 parts In-Stock

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$0.474

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$0.460

3,667

$0.474

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$0.460

Continental Prestige Electronics

USA . 3,014 parts In-Stock

1+ parts

$0.474

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$0.465

3,014

$0.474

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$0.465

Corohmni

South Africa . 128 parts In-Stock

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$0.490

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128

$0.490

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.521

100+ parts

$0.495

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$0.495

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500

$0.521

$0.495

$0.495

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Bastille Electronics

Australia . 1,000 parts In-Stock

1+ parts

$1.000

100+ parts

$0.950

1k+ parts

$0.902

10k+ parts

$0.890

1,000

$1.000

$0.950

$0.902

$0.890

Corphita

USA . 2,097 parts In-Stock

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$1.062

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$1.062

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Aztec Data Supply Inc.

USA . 129 parts In-Stock

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$1.320

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129

$1.320

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Problanco Electronics

Mexico . 7,772 parts In-Stock

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SupplyDigital Components

Austria . 6,302 parts In-Stock

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Kulean Microsystems

USA . 2,915 parts In-Stock

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TANS Electronics

Latvia . 2,880 parts In-Stock

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Perfect Parts

USA . 1,428 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Robosynatics

Brazil . 300 parts In-Stock

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Lucentia Tech

USA . 300 parts In-Stock

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$12.568

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$12.568

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$12.568

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$12.568

$12.568

UHIMA Technologies

Türkiye . 15 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the NJVMJD44H11G power bipolar junction transistor by Onsemi. Manufactured with superior quality and reliability, this NPN transistor is designed for switching applications, providing efficient power management. With a maximum collector-emitter voltage of 80V and a maximum collector current of 8A, this transistor offers high power dissipation of 20W. Ideal for a variety of applications, including automotive electronics and industrial equipment, the NJVMJD44H11G delivers outstanding value and functionality, making it a top choice for engineers and manufacturers seeking top-notch performance in their products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are versatile in various circuit designs.

Configuration: SINGLE

Single configuration makes it easy to integrate into existing circuit designs without complicating the layout.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in such scenarios.

Maximum Power Dissipation (Abs): 20 W

High power dissipation rating allows for handling of higher power requirements, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 80 V

High voltage rating allows for handling of higher voltage circuits, ensuring compatibility with a wide range of applications.

Maximum Collector Current (IC): 8 A

High collector current rating allows for handling of higher current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 85 MHz

High transition frequency enables fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD44H11G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJD44H11G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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