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NJVMJD340T4G-VF01

Onsemi

NJVMJD340T4G-VF01 by Onsemi

NJVMJD340T4G-VF01 by Onsemi is a NPN BJT transistor for switching applications. It has hFE of 30, VCEO of 300V, and IC of 0.5A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and high operating temperature range from -65 to 150°C.

Median Price

$1.497

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 600 parts In-Stock

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$1.497

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$1.422

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$1.422

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600

$1.497

$1.422

$1.422

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Digiode

USA . 772 parts In-Stock

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$1.422

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772

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Flip Electronics

USA . 8,333 parts In-Stock

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Vyrian

USA . 761 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 500 parts In-Stock

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$1.112

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500

$1.112

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Semicontronic

India . 566 parts In-Stock

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$1.270

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$1.238

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$1.232

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566

$1.270

$1.238

$1.232

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Ampacity Inc.

Singapore . 410 parts In-Stock

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$1.270

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410

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Corphita

USA . 731 parts In-Stock

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$1.347

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731

$1.347

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$1.497

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$1.422

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$1.422

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600

$1.497

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$1.422

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Corohmni

South Africa . 103 parts In-Stock

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$1.497

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103

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AZTECH Wire

Italy . 761 parts In-Stock

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$9.099

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761

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SupplyDigital Components

Austria . 7,538 parts In-Stock

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Kulean Microsystems

USA . 7,537 parts In-Stock

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TANS Electronics

Latvia . 1,474 parts In-Stock

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UHIMA Technologies

Türkiye . 778 parts In-Stock

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Continental Prestige Electronics

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Robosynatics

Brazil . 350 parts In-Stock

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Lucentia Tech

USA . 350 parts In-Stock

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Argo Parts USA

USA . 285 parts In-Stock

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Problanco Electronics

Mexico . 108 parts In-Stock

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Bastille Electronics

Australia . 97 parts In-Stock

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Overview

Enhance your power management systems with the NJVMJD340T4G-VF01 by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. Its NPN configuration and high-quality silicon material ensure reliable operation, while its small outline package makes it ideal for space-constrained designs. Experience the benefits of a maximum collector-emitter voltage of 300V and a high DC current gain of 30, all in a single, surface-mountable package. Trust Onsemi to deliver superior quality and efficiency in every transistor, empowering your projects to reach new heights of success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and can handle high power levels efficiently.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

The surface mount feature allows for easy and compact PCB assembly, saving space and reducing overall product size.

Package Shape: RECTANGULAR

The rectangular shape is space-efficient and fits well in modern electronic devices.

Terminal Form: GULL WING

The gull wing terminals provide secure connections and facilitate easy soldering during assembly.

No. of Terminals: 2

Having only 2 terminals simplifies the circuit layout and connection, making it easier to integrate the transistor into a design.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for compact designs and enhances the overall aesthetic appeal of the product.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures reliable amplification and signal switching capabilities.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the transistor can withstand high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 300 V

The high collector-emitter voltage rating of 300V allows the transistor to handle high voltage applications without risk of damage.

Transistor Element Material: SILICON

Silicon transistors offer stable and consistent performance, making them a reliable choice for various electronic applications.

Minimum Operating Temperature: -65 °C

The minimum operating temperature of -65°C ensures the transistor can function in extremely cold environments without issues.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, the transistor can handle moderate power levels effectively.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals provides excellent solderability and ensures reliable electrical connections.

Terminal Position: SINGLE

The single terminal position simplifies circuit layout and ensures proper orientation during installation.

Case Connection: COLLECTOR

The case connection at the collector enhances thermal performance and allows for efficient heat dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time of 30 seconds minimizes the risk of thermal damage during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and maximum joint strength during assembly.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and performance in automotive applications.

Nominal Transition Frequency (fT): 10 MHz

The high nominal transition frequency of 10 MHz indicates the transistor's capability to switch signals quickly and accurately.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD340T4G-VF01 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJD340T4G-VF01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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