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NJVMJD122T4G-VF01

Onsemi

NJVMJD122T4G-VF01 by Onsemi

NJVMJD122T4G-VF01 by Onsemi is a NPN BJT with Darlington configuration, hFE of 100, and VCE of 100V. Ideal for amplifier applications, it operates b/w -65 to 150°C with IC up to 8A. Suitable for surface mount with Gull Wing terminals in a small outline package.

Median Price

$1.040

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 37,950 parts In-Stock

1+ parts

$0.380

100+ parts

$0.370

1k+ parts

$0.360

10k+ parts

-

37,950

$0.380

$0.370

$0.360

-

Element14

Singapore . 355 parts In-Stock

1+ parts

$1.040

100+ parts

$0.554

1k+ parts

$0.443

10k+ parts

$0.361

355

$1.040

$0.554

$0.443

$0.361

Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$1.645

100+ parts

$1.563

1k+ parts

$1.563

10k+ parts

-

5,000

$1.645

$1.563

$1.563

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 969 parts In-Stock

1+ parts

$0.361

100+ parts

-

1k+ parts

-

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969

$0.361

-

-

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ComSIT Distribution GmbH

Germany . 255,000 parts In-Stock

1+ parts

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255,000

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Flip Electronics

USA . 27,500 parts In-Stock

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-

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27,500

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-

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Vyrian

USA . 7,697 parts In-Stock

1+ parts

-

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7,697

-

-

-

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Greenchips

USA . 1,666 parts In-Stock

1+ parts

-

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1,666

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SIE Connect GmbH - GreenChips

Germany . 1,666 parts In-Stock

1+ parts

-

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1,666

-

-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

-

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 14,425 parts In-Stock

1+ parts

$0.323

100+ parts

-

1k+ parts

-

10k+ parts

-

14,425

$0.323

-

-

-

Semicontronic

India . 14,189 parts In-Stock

1+ parts

$0.323

100+ parts

$0.315

1k+ parts

$0.313

10k+ parts

-

14,189

$0.323

$0.315

$0.313

-

Corphita

USA . 239 parts In-Stock

1+ parts

$0.342

100+ parts

-

1k+ parts

-

10k+ parts

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239

$0.342

-

-

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Corohmni

South Africa . 355 parts In-Stock

1+ parts

$0.380

100+ parts

-

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-

10k+ parts

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355

$0.380

-

-

-

Aztec Data Supply Inc.

USA . 13,549 parts In-Stock

1+ parts

$0.538

100+ parts

-

1k+ parts

-

10k+ parts

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13,549

$0.538

-

-

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Continental Prestige Electronics

USA . 555 parts In-Stock

1+ parts

$0.545

100+ parts

$0.252

1k+ parts

$0.171

10k+ parts

-

555

$0.545

$0.252

$0.171

-

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$1.645

100+ parts

$1.563

1k+ parts

$1.563

10k+ parts

-

5,000

$1.645

$1.563

$1.563

-

AZTECH Wire

Italy . 838 parts In-Stock

1+ parts

$12.760

100+ parts

-

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-

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838

$12.760

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Component Stockers USA

USA . 568 parts In-Stock

1+ parts

$99.990

100+ parts

-

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568

$99.990

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Perfect Parts

USA . 22,400 parts In-Stock

1+ parts

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22,400

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Kulean Microsystems

USA . 7,005 parts In-Stock

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7,005

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SupplyDigital Components

Austria . 5,541 parts In-Stock

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5,541

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TANS Electronics

Latvia . 5,497 parts In-Stock

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5,497

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Argo Parts USA

USA . 2,013 parts In-Stock

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2,013

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Problanco Electronics

Mexico . 1,001 parts In-Stock

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1,001

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Bastille Electronics

Australia . 900 parts In-Stock

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900

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UHIMA Technologies

Türkiye . 829 parts In-Stock

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829

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Microchip USA

USA . 274 parts In-Stock

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274

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Modulus Dynamics

Lithuania . 200 parts In-Stock

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200

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Robosynatics

Brazil . 150 parts In-Stock

1+ parts

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$17.176

1k+ parts

$17.176

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$17.176

150

-

$17.176

$17.176

$17.176

Lucentia Tech

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$17.176

1k+ parts

$17.176

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$17.176

150

-

$17.176

$17.176

$17.176

Overview

Enhance your amplifier designs with the NJVMJD122T4G-VF01 from Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers superior performance and reliability. Ideal for a wide range of applications, including amplification, this NPN transistor features a Darlington configuration with a built-in diode and resistor, ensuring seamless integration into your projects. With a high DC current gain of 100 and a maximum collector-emitter voltage of 100V, this transistor guarantees optimal functionality even in challenging conditions. Trust Onsemi's NJVMJD122T4G-VF01 to deliver unmatched quality and efficiency for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material makes the product suitable for various applications.

Polarity or Channel Type: NPN

Commonly used type in amplification circuits, providing versatility in design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Integrated components save space and simplify circuit design, making the product efficient.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Easy to mount on circuit boards, facilitating assembly and reducing manufacturing time.

Package Shape: RECTANGULAR

Space-efficient shape allows for compact designs and easy placement on PCBs.

Minimum DC Current Gain (hFE): 100

High current gain ensures efficient amplification and signal processing.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for various operating environments.

Maximum Collector-Emitter Voltage: 100 V

High voltage rating provides protection against voltage spikes, enhancing product reliability.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability.

Minimum Operating Temperature: -65 °C

Can operate in low-temperature environments, making the product versatile in different conditions.

Maximum Collector Current (IC): 8 A

High current rating enables the product to handle significant power loads.

Terminal Finish: MATTE TIN

Provides corrosion resistance and ensures reliable electrical connections.

Reference Standard: AEC-Q101

Compliance with automotive quality standards ensures reliability in automotive applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD122T4G-VF01 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NJVMJD122T4G-VF01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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