Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2SD1803T-TL-E
Onsemi
2SD1803T-TL-E by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 5A. It is commonly used for switching applications due to its low VCEsat of 0.55V and high transition frequency of 130MHz.
COLLECTOR
5 A
60 pF
50 V
SINGLE
35
R-PSSO-G2
e6
1
2
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
PNP
1 W
20 W
Other Transistors
YES
TIN BISMUTH
GULL WING
30
SWITCHING
SILICON
130 MHz
.55 V
NJVMJD32CG
NJVMJD32CG by Onsemi is a PNP BJT with 15W power dissipation, 3A collector current, and 150°C max operating temp. Ideal for automotive applications due to AEC-Q101 standard compliance and 3MHz transition frequency.
3 A
10
e3
15 W
AEC-Q101
MATTE TIN
3 MHz
NJVMJD45H11RLG
NJVMJD45H11RLG by Onsemi is a PNP BJT transistor for switching applications. It has a max collector-emitter voltage of 80V, max collector current of 8A, and min DC current gain of 40. Suitable for small outline packages in automotive electronics due to AEC-Q101 compliance.
8 A
80 V
40
90 MHz
NJVNJD35N04G
NJVNJD35N04G by Onsemi is a NPN Darlington BJT with 45W power dissipation, 4A collector current, and 300 min hFE. Ideal for automotive applications due to AEC-Q101 standard compliance and high transition frequency of 90MHz.
4 A
DARLINGTON
300
NPN
45 W
NSV40301MZ4T1G
NSV40301MZ4T1G by Onsemi is a NPN Power BJT with 40V VCE, 3A IC, and small outline package. Ideal for power management applications requiring high collector current and voltage capabilities.
40 V
SBCP68T1G
SBCP68T1G by Onsemi is a NPN BJT transistor with VCEsat of 0.5V, hFE of 60, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and small outline package style. Operating temperature range from -65 to 150°C makes it suitable for various environments.
1 A
20 V
60
TO-261
R-PDSO-G4
4
-65 Cel
1.5 W
DUAL
60 MHz
.5 V
NJVMJB41CT4G
NJVMJB41CT4G by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high operating temperature range of -65°C to 150°C. Package style is small outline with gull wing terminals for surface mount assembly.
6 A
100 V
15
65 W
BD135TG
The Onsemi BD135TG is a NPN BJT with max power dissipation of 1.25W, hFE of 40, and IC of 1.5A. Ideal for power applications where a single configuration is needed, operating up to 150 °C.
1.5 A
1.25 W
NO
BD438TG
The Onsemi BD438TG is a PNP BJT with max power dissipation of 36W, hFE of 85, and IC of 4A. Ideal for applications requiring high-power amplification in temperature range -55 to 150°C. Suitable for single configuration setups needing reliable performance with fT of 3MHz.
85
-55 Cel
36 W
2SB1203S-H
The Onsemi 2SB1203S-H is a NPN BJT transistor with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. With a power dissipation of 20W, it's suitable for various power electronics designs.
40 pF
R-PSIP-T3
3
IN-LINE
THROUGH-HOLE
180 MHz
.4 V
2SB1203S-TL-H
The Onsemi 2SB1203S-TL-H is a NPN Power BJT for switching applications. Features include VCEsat of 0.4V, IC of 5A, and hFE of 35. With a max operating temperature of 150°C, it's ideal for high-power switching circuits in various electronic devices.
2SB1203T-TL-H
Onsemi's 2SB1203T-TL-H is a NPN BJT transistor with VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications, it has a max operating temp of 150 °C and fT of 180MHz. With GULL WING terminals in a SMALL OUTLINE package, it offers high power dissipation at 20W.
2SD1803T-H
The Onsemi 2SD1803T-H is a PNP BJT transistor with VCEsat of 0.55V, IC of 5A, and hFE of 35. Ideal for switching applications, it has a max power dissipation of 20W and operates at temperatures up to 150°C. The package style is in-line with through-hole terminals.
NJVMJD31CG
NJVMJD31CG by Onsemi is a Power BJT with SILICON element. It comes in a RECTANGULAR PLASTIC package with GULL WING terminals for SMT. AEC-Q101 certified, it's ideal for automotive applications due to its high-temperature tolerance up to 260°C and small outline design.
2SA2012-TD-E
2SA2012-TD-E by Onsemi is a PNP BJT transistor for switching applications. With hFE of 200, it can handle up to 5A collector current and 3.5W power dissipation. Operating at max 150 °C, this transistor has a fT of 350MHz making it suitable for high-frequency applications.
30 V
200
TO-243
R-PSSO-F3
3.5 W
Tin/Bismuth (Sn/Bi)
FLAT
350 MHz
2SB1302T-TD-E
Onsemi's 2SB1302T-TD-E is a PNP BJT transistor with max. collector-emitter voltage of 20V and max. collector current of 5A. With a min. DC current gain of 60, it's ideal for switching applications in small outline packages at up to 150 °C operating temperature.
1.3 W
320 MHz
NJVMJD112G
NJVMJD112G by Onsemi is a NPN Darlington BJT with 2A IC, 20W Pd, and hFE of 1000. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency of 25MHz. Its small outline package makes it suitable for surface mount designs in harsh environments.
2 A
1000
Matte Tin (Sn) - annealed
25 MHz
NJX1675PDR2G
NJX1675PDR2G by Onsemi is a Power BJT with NPN/PNP polarity, 2 separate elements. Ideal for switching applications, it has hFE of 180, VCE of 30V, and IC of 3A. With a max temp of 150 °C and fT of 100MHz, this transistor in Gull Wing package suits SMT designs.
SEPARATE, 2 ELEMENTS
180
R-PDSO-G8
8
NPN AND PNP
Not Qualified
TIN
100 MHz
PCP1103-TD-H
PCP1103-TD-H by Onsemi is a PNP BJT transistor with 3 terminals, capable of handling up to 1.5A collector current and 30V collector-emitter voltage. With a min hFE of 200, it's ideal for switching applications at temperatures up to 150 °C. This surface-mount transistor has a small outline package style suitable for high-frequency operations up to 450MHz.
450 MHz
MJW0281AG
The Onsemi MJW0281AG is a NPN BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a min hFE of 75 and comes in a plastic/epoxy package with through-hole terminals.
15 A
260 V
75
TO-247
R-PSFM-T3
FLANGE MOUNT
Tin (Sn)
AMPLIFIER
30 MHz
MJW0302AG
The Onsemi MJW0302AG is a PNP BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a hFE of 75 and comes in a plastic/epoxy package with through-hole terminals.
NJL21193DG
NJL21193DG by Onsemi is a PNP BJT transistor with 250V VCE, 16A IC, and 4MHz fT. Ideal for amplifier applications due to its single configuration with built-in diode. Package style is flange mount with 5 terminals in a rectangular shape.
16 A
250 V
SINGLE WITH BUILT-IN DIODE
R-PSFM-T5
5
4 MHz
NJL21194DG
NJL21194DG by Onsemi is a NPN BJT transistor with 250V VCE, 16A IC, and 4MHz fT. Ideal for amplifier applications, it features a single configuration with built-in diode in a rectangular flange mount package.
TIP42G
TIP42G by Onsemi is a PNP BJT transistor with 65W power dissipation, 40V max. collector-emitter voltage, and 6A max. collector current. Ideal for switching applications, it has a min hFE of 15 and operates at up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
TO-220AB
NJL0281DG
NJL0281DG by Onsemi is a NPN BJT with 260V VCEO, 15A IC, and 180W Ptot. Ideal for amplifier applications due to its single configuration with built-in diode. Operates at up to 150°C, featuring a transition frequency of 30MHz in a rectangular package style.
HIGH RELIABILITY
TO-264
180 W
NJL0302DG
NJL0302DG by Onsemi is a PNP BJT with 180W power dissipation, 260V max collector-emitter voltage, and 30MHz transition frequency. Ideal for amplifier applications due to its single configuration with built-in diode and high collector current of 15A.
NJL4281DG
NJL4281DG by Onsemi is a NPN BJT transistor with 350V VCEO, 15A IC, and 200W Ptot. Ideal for amplifier applications due to its hFE of 10 and fT of 35MHz. Packaged in PLASTIC/EPOXY with FLANGE MOUNT style for through-hole mounting.
350 V
200 W
35 MHz
NJL4302DG
NJL4302DG by Onsemi is a PNP BJT transistor with 5 terminals. It has a max power dissipation of 200W, operating temp of 150 °C, and max collector-emitter voltage of 350V. Ideal for amplifier applications due to its single configuration with built-in diode and silicon element material.
MJD117RLG
MJD117RLG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 2A. It is designed for switching applications and has a min DC current gain of 200 (hFE).
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
NJW0281G
NJW0281G by Onsemi is a NPN BJT with 150W power dissipation, 250V max collector-emitter voltage, and 30MHz fT. Ideal for amplifier applications due to its single configuration and high hFE of 75. The transistor's flange mount package with matte tin finish makes it suitable for through-hole mounting in various electronic devices.
150 W
NJW21193G
NJW21193G by Onsemi is a PNP BJT transistor with 250V VCEO, 16A IC, and 200W power dissipation. Ideal for amplifier applications, it has a min hFE of 8 and operates up to 150°C. The package style is flange mount with a rectangular shape and through-hole terminals.
MJB41CT4
MJB41CT4 by Onsemi is a NPN BJT transistor with 100V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a hFE of 15 and operates up to 150 °C. Its GULL WING terminals make it suitable for surface mount designs in various electronic devices.
e0
235
Tin/Lead (Sn/Pb)
MJB41C
MJB41C by Onsemi is a NPN BJT transistor with 65W power dissipation, 100V collector-emitter voltage, and 6A collector current. It is used for switching applications in small outline packages with Gull Wing terminals. Operating at up to 150 °C, it offers a transition frequency of 3MHz for efficient performance.
MJD31CRL
MJD31CRL by Onsemi is a NPN BJT transistor with 15W power dissipation, 100V collector-emitter voltage, and 3A collector current. Ideal for amplifier applications, it has a small outline package style and operates up to 140 °C. Suitable for surface mount assembly with Gull Wing terminals.
140 Cel
MJD32CRL
MJD32CRL by Onsemi is a PNP BJT transistor with 100V VCEO, 3A IC, and 15W power dissipation. Ideal for amplifier applications, it has a hFE of 10 and operates up to 140 °C. This Gull Wing package with tin-lead finish is surface mountable and offers a transition frequency of 3MHz.
TIN LEAD
MJW1302A
The Onsemi MJW1302A is a PNP BJT transistor with 230V VCE, 15A IC, and 200W power dissipation. Ideal for amplifier applications, it has a min hFE of 12 and operates up to 150 °C. The package style is flange mount with a rectangular shape and through-hole terminals.
230 V
12
TO-247AD
MJW21193
MJW21193 by Onsemi is a PNP BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.
ISOLATED
MJW21194
MJW21194 by Onsemi is a NPN Power BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and 4MHz transition frequency. The transistor's plastic/epoxy package body and flange mount style make it suitable for through-hole mounting in various electronic devices.
MJW21195
MJW21195 by Onsemi is a PNP BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.
MJW21196
MJW21196 by Onsemi is a NPN Power BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon transistor element material. The package style is flange mount with through-hole terminals.
MJW3281A
MJW3281A by Onsemi is a NPN BJT transistor with 230V max collector-emitter voltage, 15A max collector current, and 200W max power dissipation. Ideal for amplifier applications due to its single configuration and silicon element material. The package style is flange mount with through-hole terminals.
BUB323ZT4
BUB323ZT4 by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 350V, collector current of 10A, and power dissipation of 150W. With a transition frequency of 2MHz, it is suitable for high-power electronic circuits in various industries.
10 A
500
175 Cel
2 MHz
BUB323Z
BUB323Z by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max power dissipation of 150W, hFE of 500, and VCE of 350V. With a small outline package style and surface mount capability, it operates b/w -65 to 175 °C for various electronic designs.
NCV1413BDR2
NCV1413BDR2 by Onsemi is a NPN BJT transistor for switching applications. It has a min hFE of 1000, max VCE of 50V, and max IC of 0.5A. This surface-mount transistor comes in a small outline package with 16 terminals and Gull Wing form factor, ideal for compact electronic designs.
LOGIC LEVEL COMPATIBLE
.5 A
COMPLEX
R-PDSO-G16
7
16
BD437T
The Onsemi BD437T is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 36W and max collector current of 4A. With a min DC current gain of 40, it operates at up to 150 °C, making it suitable for high-power electronic circuits.
45 V
TO-225AA
BD682T
BD682T by Onsemi is a PNP BJT transistor with 40W power dissipation, 4A collector current, and 10MHz transition frequency. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.
750
40 W
10 MHz
MJL4281A
The Onsemi MJL4281A is a NPN BJT transistor with 230W power dissipation, ideal for amplifier applications. It has a max collector-emitter voltage of 350V, max collector current of 15A, and min DC current gain of 10. The package style is flange mount with through-hole terminals in a rectangular shape.
TO-264AA
230 W
MJL4302A
The Onsemi MJL4302A is a PNP BJT transistor with 230W power dissipation, 350V max. collector-emitter voltage, and 15A max. collector current. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
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