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NJW21193G

Onsemi

NJW21193G by Onsemi

NJW21193G by Onsemi is a PNP BJT transistor with 250V VCEO, 16A IC, and 200W power dissipation. Ideal for amplifier applications, it has a min hFE of 8 and operates up to 150°C. The package style is flange mount with a rectangular shape and through-hole terminals.

Median Price

$5.080

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 416 parts In-Stock

1+ parts

$5.080

100+ parts

-

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416

$5.080

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DigiKey

USA . 137 parts In-Stock

1+ parts

$5.080

100+ parts

$2.842

1k+ parts

$1.989

10k+ parts

$1.869

137

$5.080

$2.842

$1.989

$1.869

Chip1Stop

Japan . 31 parts In-Stock

1+ parts

$6.850

100+ parts

-

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31

$6.850

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Verical

USA . 270 parts In-Stock

1+ parts

-

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$2.106

1k+ parts

$1.976

10k+ parts

-

270

-

$2.106

$1.976

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Master Electronics

USA . 270 parts In-Stock

1+ parts

-

100+ parts

$1.790

1k+ parts

$1.660

10k+ parts

$1.610

270

-

$1.790

$1.660

$1.610

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$2.278

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-

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50

$2.278

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Digiode

USA . 1,699 parts In-Stock

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$3.306

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1,699

$3.306

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TME

Poland . 37 parts In-Stock

1+ parts

$3.830

100+ parts

$2.840

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37

$3.830

$2.840

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Maritex

Poland . 54 parts In-Stock

1+ parts

$7.224

100+ parts

$4.359

1k+ parts

$3.682

10k+ parts

-

54

$7.224

$4.359

$3.682

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Sensible Micro Corp

USA . 562,155 parts In-Stock

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562,155

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ComSIT Distribution GmbH

Germany . 86,308 parts In-Stock

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86,308

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Vyrian

USA . 7,822 parts In-Stock

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7,822

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Chip Stock

USA . 5,500 parts In-Stock

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5,500

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Flip Electronics

USA . 5,370 parts In-Stock

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5,370

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IBS Electronics

USA . 270 parts In-Stock

1+ parts

-

100+ parts

$2.510

1k+ parts

$2.328

10k+ parts

$2.258

270

-

$2.510

$2.328

$2.258

NAC Semi

USA . 150 parts In-Stock

1+ parts

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$2.900

1k+ parts

$2.700

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150

-

$2.900

$2.700

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 575 parts In-Stock

1+ parts

$0.740

100+ parts

-

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575

$0.740

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Ampacity Inc.

Singapore . 476 parts In-Stock

1+ parts

$1.720

100+ parts

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476

$1.720

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Corohmni

South Africa . 223 parts In-Stock

1+ parts

$2.188

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223

$2.188

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$2.233

100+ parts

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1k+ parts

$2.143

10k+ parts

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100

$2.233

-

$2.143

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Argo Parts USA

USA . 2,727 parts In-Stock

1+ parts

$2.278

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2,727

$2.278

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Continental Prestige Electronics

USA . 329 parts In-Stock

1+ parts

$2.278

100+ parts

-

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$2.233

329

$2.278

-

-

$2.233

Semicontronic

India . 297 parts In-Stock

1+ parts

$2.960

100+ parts

$2.886

1k+ parts

$2.871

10k+ parts

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297

$2.960

$2.886

$2.871

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Corphita

USA . 1,176 parts In-Stock

1+ parts

$3.132

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1,176

$3.132

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Microchip USA

USA . 9,359 parts In-Stock

1+ parts

$27.300

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9,359

$27.300

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RC Electronics

USA . 38,760 parts In-Stock

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38,760

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Kepictronics

USA . 16,998 parts In-Stock

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TANS Electronics

Latvia . 7,841 parts In-Stock

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7,841

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Kulean Microsystems

USA . 6,696 parts In-Stock

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6,696

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A-Z Elektronik GmbH

Germany . 5,969 parts In-Stock

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5,969

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Lixinc

USA . 3,943 parts In-Stock

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3,943

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Problanco Electronics

Mexico . 1,815 parts In-Stock

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1,815

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Perfect Parts

USA . 1,566 parts In-Stock

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1,566

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UHIMA Technologies

Türkiye . 548 parts In-Stock

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548

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Authorized Procurement Solutions

USA . 120 parts In-Stock

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120

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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SupplyDigital Components

Austria . 37 parts In-Stock

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37

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Overview

Elevate your electronic projects with the NJW21193G Power BJT from Onsemi. Known for their high-quality components, Onsemi delivers reliable and efficient products that are perfect for a wide range of applications. Whether you're looking to amplify signals or power up your circuits, this PNP transistor offers unmatched performance with a maximum power dissipation of 200W and a maximum collector-emitter voltage of 250V. Trust Onsemi to provide you with the tools you need to succeed in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This makes the product lightweight and durable, ideal for portable applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections.

No. of Terminals: 3

Three terminals offer flexibility in circuit design and connection options.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability allows for handling of large amounts of power.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides easy mounting and heat dissipation.

Minimum DC Current Gain (hFE): 8

Minimum current gain ensures consistent and reliable performance.

Maximum Operating Temperature: 150 °C

High operating temperature range makes the product suitable for a variety of environments.

Maximum Collector-Emitter Voltage: 250 V

High collector-emitter voltage rating allows for handling of high voltages.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and reliability.

Maximum Collector Current (IC): 16 A

High collector current rating allows for handling of large currents.

Terminal Finish: MATTE TIN

Matte tin finish ensures good conductivity and corrosion resistance.

Terminal Position: SINGLE

Single terminal position simplifies installation and connections.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency enables fast switching and response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJW21193G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJW21193G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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