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MJD31CT4

Onsemi

MJD31CT4 by Onsemi

MJD31CT4 by Onsemi is a NPN BJT transistor with 15W power dissipation, 100V max collector-emitter voltage, and 3A max collector current. Ideal for amplifier applications, it has a small outline package style and operates up to 150°C. With a transition frequency of 3MHz, it is suitable for surface mount designs.

Median Price

$0.278

Lifecycle Status

Suppliers In-Stock

61

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 17,500 parts In-Stock

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$0.180

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$0.180

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$0.170

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$0.180

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Newark

USA . 7,500 parts In-Stock

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$0.199

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Adafruit Industries

USA . 500 parts In-Stock

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$0.813

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$0.740

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$0.667

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$0.813

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Mouser Electronics

USA . 4,514 parts In-Stock

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$1.430

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$0.596

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$0.423

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$0.308

4,514

$1.430

$0.596

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$0.308

DigiKey

USA . 1,332 parts In-Stock

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$1.430

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$0.595

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$0.423

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EBV Elektronik

Germany . 962,500 parts In-Stock

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Arrow

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Verical

USA . 115,000 parts In-Stock

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Avnet

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Canada . 30,000 parts In-Stock

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Chip1Stop

Japan . 17,500 parts In-Stock

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Element14

Singapore . 2,548 parts In-Stock

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Distrelec

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UK . 2,120 parts In-Stock

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Farnell

UK . 83 parts In-Stock

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Freelance Electronics

USA . 3,260 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Maritex

Poland . 1,269 parts In-Stock

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Digiode

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TME

Poland . 1,433 parts In-Stock

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Component Electronics Inc.

Canada . 6,000 parts In-Stock

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IBS Electronics

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ComSIT Distribution GmbH

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Rutronik

Germany . 2,520 parts In-Stock

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Anansix

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Connector Distribution Corp

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Right Parts Inc.

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Bristol Electronics

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Corel Iberica Componentes, S.L.

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Semi Source

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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J & M Industries LLC

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Lantek

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Inventory MP

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Quantum Digital Technology

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Electronics Depot

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ACDS - Activité Composants Distribution Service

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Flex Direct, LLC

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PC Components Company LLC

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NexGen Digital

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Semicontronic

India . 60,070 parts In-Stock

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$0.092

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$0.090

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$0.089

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Aztec Data Supply Inc.

USA . 4,875 parts In-Stock

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$0.367

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Continental Prestige Electronics

USA . 5,543 parts In-Stock

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$0.392

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Argo Parts USA

USA . 254 parts In-Stock

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Corohmni

South Africa . 141 parts In-Stock

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$0.426

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IDEA Electronic Components Group

UK . 2,064 parts In-Stock

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$0.673

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$0.605

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Corphita

USA . 3,675 parts In-Stock

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$0.732

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Benley Electronics

USA . 2 parts In-Stock

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$0.750

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.813

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$0.740

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$0.667

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$0.813

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MKK Technologies

India . 222 parts In-Stock

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$1.265

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DigiPath Technology Company

USA . 222 parts In-Stock

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Component Stockers USA

USA . 521 parts In-Stock

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Perfect Parts

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Canada . 56,986 parts In-Stock

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iodParts Technologies Inc.

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Netroflash

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$0.396

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Giza Technologies, Inc.

USA . 600 parts In-Stock

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UHIMA Technologies

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Parana Technologies

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Authorized Procurement Solutions

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Overview

Upgrade your electronic devices with the MJD31CT4 by Onsemi, a high-quality Power Bipolar Junction Transistor that guarantees efficiency and reliability. Manufactured by Onsemi, a renowned industry leader, this NPN transistor is perfect for amplifier applications. With a maximum power dissipation of 15W and a maximum collector-emitter voltage of 100V, you can trust in the performance of this product. Its small outline package, Gull Wing terminals, and single configuration make it easy to use and integrate into your designs. Trust in Onsemi's expertise and choose the MJD31CT4 for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and mechanical strength, making the transistor durable and reliable.

Polarity or Channel Type: NPN

Commonly used for amplification applications, making it suitable for various electronic projects.

Configuration: SINGLE

Simplified design with only one transistor in the package, making it easier to use and integrate in circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in audio and signal amplification circuits.

Surface Mount: YES

Can be easily mounted on a PCB, saving space and simplifying the manufacturing process.

Package Shape: RECTANGULAR

Compact shape for efficient utilization of PCB real estate.

Terminal Form: GULL WING

Allows for easy soldering and reliable connection to the PCB.

Maximum Power Dissipation (Abs): 15 W

Can handle high power dissipation, suitable for applications requiring high power output.

Package Style (Meter): SMALL OUTLINE

Compact and space-saving design for efficient PCB layout.

Minimum DC Current Gain (hFE): 10

Ensures stable and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, suitable for various industrial and automotive applications.

Maximum Collector-Emitter Voltage: 100 V

Can handle moderate voltage levels, suitable for many amplifier applications.

Transistor Element Material: SILICON

Provides good electrical properties and reliable performance.

Maximum Collector Current (IC): 3 A

Can handle high current levels, suitable for applications requiring high power output.

Terminal Finish: Tin/Lead (Sn/Pb)

Ensures good solderability and electrical conductivity.

Terminal Position: SINGLE

Simplified connection with only one terminal position to consider.

Case Connection: COLLECTOR

Clearly indicates the connection point for easy integration into circuits.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for easy and quick reflow soldering during manufacturing processes.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures without degradation.

Nominal Transition Frequency (fT): 3 MHz

High frequency capability for fast switching speeds in amplification applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD31CT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD31CT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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