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MJD350T4G

Onsemi

MJD350T4G by Onsemi

MJD350T4G by Onsemi is a PNP BJT transistor with 300V VCE, 0.5A IC, and 15W power dissipation. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating up to 150°C, it offers a min hFE of 30 and matte tin finish.

Median Price

$0.474

Lifecycle Status

Suppliers In-Stock

33

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,820 parts In-Stock

1+ parts

$1.240

100+ parts

$0.533

1k+ parts

$0.452

10k+ parts

-

1,820

$1.240

$0.533

$0.452

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DigiKey

USA . 48,116 parts In-Stock

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$1.260

100+ parts

$0.521

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$0.367

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48,116

$1.260

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Mouser Electronics

USA . 16,302 parts In-Stock

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$1.260

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$0.522

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$1.260

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Chip1Stop

Japan . 105,000 parts In-Stock

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$0.257

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Arrow

USA . 45,000 parts In-Stock

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$0.255

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Verical

USA . 45,000 parts In-Stock

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Avnet

USA . 12,500 parts In-Stock

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Master Electronics

USA . 5,000 parts In-Stock

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$0.537

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$0.349

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$0.276

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$0.537

$0.349

$0.276

Farnell

UK . 2,941 parts In-Stock

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$0.411

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$0.290

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Element14

Singapore . 2,941 parts In-Stock

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$0.700

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$0.496

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Rochester

USA . 481 parts In-Stock

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$0.348

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$0.289

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$0.258

481

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$0.258

Distributors (In-Stock)

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Digiode

USA . 460 parts In-Stock

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$0.284

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460

$0.284

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Nova Conductors

Japan . 10 parts In-Stock

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$0.348

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$0.348

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Maritex

Poland . 1,203 parts In-Stock

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$0.772

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$0.452

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$0.419

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$0.375

1,203

$0.772

$0.452

$0.419

$0.375

Chip Stock

USA . 77,500 parts In-Stock

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IBS Electronics

USA . 30,000 parts In-Stock

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$0.711

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$0.456

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$0.350

30,000

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$0.711

$0.456

$0.350

Vyrian

USA . 22,230 parts In-Stock

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Semtec, LLC

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Bristol Electronics

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PC Components Company LLC

USA . 2,500 parts In-Stock

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NAC Semi

USA . 2,500 parts In-Stock

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$0.824

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EPE Components Inc.

USA . 2,480 parts In-Stock

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Goldney Electronics S.L.

Spain . 2,400 parts In-Stock

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Atlantic Semiconductor

USA . 2,235 parts In-Stock

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Semi Source

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Microfarads

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Zilex Electronics Inc.

Canada . 1,707 parts In-Stock

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Cyclops Electronics Ltd

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

USA . 1,003 parts In-Stock

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Sea View Technologies

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Electronics Depot

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Contempo Components LLC

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Distributors (Availability)

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Ampacity Inc.

Singapore . 22,168 parts In-Stock

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$0.204

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Semicontronic

India . 18,373 parts In-Stock

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$0.204

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$0.199

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$0.198

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18,373

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Corohmni

South Africa . 484 parts In-Stock

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Corphita

USA . 1,371 parts In-Stock

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$0.269

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Argo Parts USA

USA . 2,996 parts In-Stock

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$0.348

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$0.338

2,996

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$0.338

Netroflash

USA . 50 parts In-Stock

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$0.348

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$0.331

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$0.324

50

$0.348

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$0.324

Continental Prestige Electronics

USA . 494 parts In-Stock

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$0.676

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$0.401

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$0.254

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494

$0.676

$0.401

$0.254

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Aztec Data Supply Inc.

USA . 1,978 parts In-Stock

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$1.392

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$1.392

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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GreenTree Electronics

Israel . 50,000 parts In-Stock

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Perfect Parts

USA . 48,554 parts In-Stock

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Kepictronics

USA . 47,500 parts In-Stock

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Futuretech Components

Singapore . 45,000 parts In-Stock

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Eastek

USA . 20,000 parts In-Stock

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Lixinc

USA . 19,766 parts In-Stock

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Infinite Electronics LLP (Excess)

. 11,921 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,662 parts In-Stock

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Kulean Microsystems

USA . 8,200 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,665 parts In-Stock

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TANS Electronics

Latvia . 2,930 parts In-Stock

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iodParts Technologies Inc.

India . 1,307 parts In-Stock

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$0.325

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SupplyDigital Components

Austria . 925 parts In-Stock

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925

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Robosynatics

Brazil . 900 parts In-Stock

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$1.408

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$1.408

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$1.408

900

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$1.408

$1.408

$1.408

Lucentia Tech

USA . 900 parts In-Stock

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$1.408

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$1.408

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$1.408

900

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$1.408

$1.408

$1.408

S.R.D Solutions

India . 500 parts In-Stock

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500

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Problanco Electronics

Mexico . 338 parts In-Stock

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Authorized Procurement Solutions

USA . 235 parts In-Stock

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UHIMA Technologies

Türkiye . 142 parts In-Stock

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Overview

Experience the power of innovation with the MJD350T4G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-of-the-line Power Bipolar Junction Transistors that are designed for switching applications. With a maximum collector-emitter voltage of 300V and a thermal dissipation of 15W, this PNP transistor offers unmatched performance and reliability. Whether you're looking to enhance your electronic projects or optimize your circuit designs, the MJD350T4G provides the perfect solution with its high-quality construction and superior functionality. Elevate your work with Onsemi's MJD350T4G and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material combination provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits and systems that require this specific polarity.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, saving time and effort during implementation.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers efficient performance in controlling current flow.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted on PCBs, saving space and improving overall circuit layout.

Package Shape: RECTANGULAR

The rectangular shape of the package offers a compact footprint, ideal for installations where space is limited.

Terminal Form: GULL WING

The gull-wing terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 2

The two terminals simplify connection to external circuits, making it user-friendly for installation and testing.

Maximum Power Dissipation (Abs): 15 W

With a high power dissipation capacity, this transistor can handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a low profile and lightweight design, suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 30

The minimum DC current gain ensures stable and reliable performance in amplification applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 300 V

The high collector-emitter voltage rating allows for compatibility with high voltage circuits, expanding the range of possible applications.

Transistor Element Material: SILICON

The silicon material of the transistor element provides excellent electrical properties, ensuring high performance and reliability.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor is capable of handling moderate current loads with ease.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals offers good solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, reducing the risk of errors during assembly.

Case Connection: COLLECTOR

The collector case connection ensures efficient heat dissipation and electrical conductivity, contributing to overall performance.

Maximum Time At Peak Reflow Temperature (s): 30

This specification indicates the maximum time the transistor can withstand peak reflow temperatures, ensuring reliability during soldering processes.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand soldering processes without damage, ensuring robust construction.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD350T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJD350T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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