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MJD32CG

Onsemi

MJD32CG by Onsemi

MJD32CG by Onsemi is a PNP BJT transistor with 100V VCEO, 3A IC, and 15W power dissipation. Ideal for amplifier applications, it operates b/w -65 to 150°C with a transition frequency of 3MHz. The Gull Wing terminal form and small outline package make it suitable for surface mount designs.

Median Price

$0.679

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3,218 parts In-Stock

1+ parts

$0.630

100+ parts

$0.259

1k+ parts

-

10k+ parts

-

3,218

$0.630

$0.259

-

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Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$0.679

100+ parts

$0.645

1k+ parts

$0.645

10k+ parts

-

5,000

$0.679

$0.645

$0.645

-

Newark

USA . 3,405 parts In-Stock

1+ parts

$0.736

100+ parts

$0.330

1k+ parts

$0.298

10k+ parts

$0.248

3,405

$0.736

$0.330

$0.298

$0.248

Farnell

UK . 3,760 parts In-Stock

1+ parts

$0.796

100+ parts

$0.342

1k+ parts

$0.328

10k+ parts

$0.321

3,760

$0.796

$0.342

$0.328

$0.321

Mouser Electronics

USA . 4,280 parts In-Stock

1+ parts

$0.960

100+ parts

$0.412

1k+ parts

-

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-

4,280

$0.960

$0.412

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DigiKey

USA . 10,423 parts In-Stock

1+ parts

$1.170

100+ parts

$0.507

1k+ parts

$0.372

10k+ parts

$0.279

10,423

$1.170

$0.507

$0.372

$0.279

Element14

Singapore . 3,760 parts In-Stock

1+ parts

$1.310

100+ parts

$0.550

1k+ parts

$0.528

10k+ parts

$0.517

3,760

$1.310

$0.550

$0.528

$0.517

EBV Elektronik

Germany . 6,000 parts In-Stock

1+ parts

-

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6,000

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Verical

USA . 3,218 parts In-Stock

1+ parts

-

100+ parts

$0.261

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3,218

-

$0.261

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RS (Exports)

UK . 3,214 parts In-Stock

1+ parts

-

100+ parts

$0.444

1k+ parts

$0.379

10k+ parts

$0.360

3,214

-

$0.444

$0.379

$0.360

Master Electronics

USA . 2,550 parts In-Stock

1+ parts

-

100+ parts

$0.425

1k+ parts

$0.304

10k+ parts

$0.241

2,550

-

$0.425

$0.304

$0.241

Avnet

USA . 2,025 parts In-Stock

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-

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2,025

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Rochester

USA . 163 parts In-Stock

1+ parts

-

100+ parts

$0.340

1k+ parts

$0.282

10k+ parts

$0.252

163

-

$0.340

$0.282

$0.252

Chip1Stop

Japan . 40 parts In-Stock

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40

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Distributors (In-Stock)

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Digiode

USA . 2,486 parts In-Stock

1+ parts

$0.264

100+ parts

-

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-

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2,486

$0.264

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.336

100+ parts

-

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10

$0.336

-

-

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TME

Poland . 282 parts In-Stock

1+ parts

$0.860

100+ parts

$0.399

1k+ parts

$0.356

10k+ parts

$0.340

282

$0.860

$0.399

$0.356

$0.340

Component Electronics Inc.

Canada . 96 parts In-Stock

1+ parts

$1.540

100+ parts

$1.150

1k+ parts

$1.000

10k+ parts

-

96

$1.540

$1.150

$1.000

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IBS Electronics

USA . 13,125 parts In-Stock

1+ parts

-

100+ parts

$0.393

1k+ parts

$0.540

10k+ parts

$0.372

13,125

-

$0.393

$0.540

$0.372

Vyrian

USA . 5,040 parts In-Stock

1+ parts

-

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5,040

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NAC Semi

USA . 4,800 parts In-Stock

1+ parts

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100+ parts

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$1.410

10k+ parts

$1.290

4,800

-

-

$1.410

$1.290

Chip Stock

USA . 2,989 parts In-Stock

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2,989

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Semi Source

USA . 125 parts In-Stock

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125

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ComSIT Distribution GmbH

Germany . 28 parts In-Stock

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28

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ComSIT USA

USA . 28 parts In-Stock

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28

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Pegasus Components GmbH

Germany . 17 parts In-Stock

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17

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J & M Industries LLC

USA . 7 parts In-Stock

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7

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,516 parts In-Stock

1+ parts

$0.236

100+ parts

-

1k+ parts

-

10k+ parts

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4,516

$0.236

-

-

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Semicontronic

India . 4,091 parts In-Stock

1+ parts

$0.236

100+ parts

$0.230

1k+ parts

$0.229

10k+ parts

-

4,091

$0.236

$0.230

$0.229

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Corphita

USA . 1,282 parts In-Stock

1+ parts

$0.250

100+ parts

-

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-

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1,282

$0.250

-

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Corohmni

South Africa . 493 parts In-Stock

1+ parts

$0.278

100+ parts

-

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493

$0.278

-

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Argo Parts USA

USA . 280 parts In-Stock

1+ parts

$0.332

100+ parts

-

1k+ parts

-

10k+ parts

$0.322

280

$0.332

-

-

$0.322

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.336

100+ parts

-

1k+ parts

-

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100

$0.336

-

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Aztec Data Supply Inc.

USA . 4,145 parts In-Stock

1+ parts

$0.383

100+ parts

-

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-

10k+ parts

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4,145

$0.383

-

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Continental Prestige Electronics

USA . 1,326 parts In-Stock

1+ parts

$0.622

100+ parts

$0.389

1k+ parts

$0.274

10k+ parts

$0.217

1,326

$0.622

$0.389

$0.274

$0.217

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$0.679

100+ parts

$0.645

1k+ parts

$0.645

10k+ parts

-

5,000

$0.679

$0.645

$0.645

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Modulus Dynamics

Lithuania . 24,584 parts In-Stock

1+ parts

$1.348

100+ parts

$1.348

1k+ parts

$1.348

10k+ parts

-

24,584

$1.348

$1.348

$1.348

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Perfect Parts

USA . 73,481 parts In-Stock

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73,481

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Kepictronics

USA . 19,950 parts In-Stock

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19,950

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Authorized Procurement Solutions

USA . 9,675 parts In-Stock

1+ parts

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9,675

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Kulean Microsystems

USA . 7,820 parts In-Stock

1+ parts

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7,820

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GreenTree Electronics

Israel . 7,200 parts In-Stock

1+ parts

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7,200

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A-Z Elektronik GmbH

Germany . 6,083 parts In-Stock

1+ parts

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6,083

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-

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SupplyDigital Components

Austria . 5,654 parts In-Stock

1+ parts

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5,654

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-

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Lixinc

USA . 5,579 parts In-Stock

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5,579

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Eastek

USA . 2,400 parts In-Stock

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2,400

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TANS Electronics

Latvia . 2,232 parts In-Stock

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2,232

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Glotronic Ltd.

UK . 2,109 parts In-Stock

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2,109

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Assy Fe

Spain . 1,204 parts In-Stock

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1,204

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Problanco Electronics

Mexico . 923 parts In-Stock

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923

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UHIMA Technologies

Türkiye . 495 parts In-Stock

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495

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Cyclops Electronics Ltd (Excess)

UK . 144 parts In-Stock

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144

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Overview

Enhance the efficiency and performance of your electronic devices with the MJD32CG Power Bipolar Junction Transistor by Onsemi. Manufactured with top-notch quality, this PNP transistor is ideal for amplifier applications, offering a maximum collector-emitter voltage of 100V and a maximum operating temperature of 150°C. With a small outline package style and gull wing terminal form, this transistor provides seamless integration and reliable operation. Trust Onsemi for superior products that deliver exceptional value and benefits to customers in various industries. Upgrade your technology with the MJD32CG today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and flexibility in design, making it suitable for various applications.

Polarity or Channel Type: PNP

Suitable for use in circuits where PNP transistors are required for proper functionality.

Configuration: SINGLE

Simplified design and ease of use in circuits that require a single transistor configuration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, providing optimized performance in such circuits.

Surface Mount: YES

Ease of installation on circuit boards, saving space and allowing for automated assembly.

Maximum Power Dissipation (Abs): 15 W

Allows for high power handling capability, making it suitable for applications that require high power.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications, while providing necessary performance capabilities.

Minimum DC Current Gain (hFE): 10

Ensures reliable amplification of input signals in the circuit.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial environments.

Maximum Collector-Emitter Voltage: 100 V

Designed to withstand high voltage levels in circuit applications.

Minimum Operating Temperature: -65 °C

Can operate in low-temperature environments, suitable for a wide range of operating conditions.

Maximum Collector Current (IC): 3 A

Capable of handling high current levels in the circuit without overheating or damage.

Nominal Transition Frequency (fT): 3 MHz

Provides fast switching speeds, suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD32CG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD32CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-575-4271, 5961015754271

NIIN

015754271

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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