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Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.

Other Function Transistors

Available Parts 2,400+

Part RoHS Manufacturer Description Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)
BC547B by Texas Instruments

BC547B

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

NPN

SINGLE

NO

150 MHz

.625 W

.1 A

1

Other Transistors

200

150 Cel

BC547C-G by Weitron Technology

BC547C-G

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

NPN

SINGLE

NO

150 MHz

.625 W

.1 A

1

Other Transistors

420

150 Cel

199 by Solitron Devices

199

Solitron Devices

Other Transistors;

BC847B by Vishay Intertechnology

BC847B

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

1

Other Transistors

200

150 Cel

Matte Tin (Sn)

1

e3

SC0321 by Fairchild Semiconductor

SC0321

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 10 A;

NPN

SINGLE

NO

1 MHz

115 W

10 A

1

Other Transistors

20

175 Cel

Tin/Lead (Sn/Pb)

e0

MMBT3906 by Vishay Intertechnology

MMBT3906

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;

PNP

SINGLE

YES

250 MHz

.3 W

.2 A

1

Other Transistors

30

150 Cel

Matte Tin (Sn)

e3

BC817-40 by Vishay Intertechnology

BC817-40

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 250;

NPN

SINGLE

YES

.33 W

.5 A

1

Other Transistors

250

150 Cel

Matte Tin (Sn)

e3

2N3055- by General Electric Solid State

2N3055-

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

NPN

SINGLE

NO

2.5 MHz

115 W

15 A

1

Other Transistors

20

200 Cel

FDV304P_NB8U003 by Fairchild Semiconductor

FDV304P_NB8U003

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .46 A;

P-CHANNEL

SINGLE

YES

.35 W

ENHANCEMENT MODE

1

.46 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.46 A

BC847C by Vishay Intertechnology

BC847C

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

1

Other Transistors

420

150 Cel

Matte Tin (Sn)

1

e3

MMBT2907A by Vishay Intertechnology

MMBT2907A

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

PNP

SINGLE

YES

200 MHz

.3 W

.6 A

1

Other Transistors

50

150 Cel

Matte Tin (Sn)

e3

BSS84AKMB,315 by NXP Semiconductors

BSS84AKMB,315

NXP Semiconductors

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .715 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;

P-CHANNEL

SINGLE

YES

.715 W

ENHANCEMENT MODE

1

.23 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.23 A

1

e3

30

260

BC817-25 by Vishay Intertechnology

BC817-25

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

NPN

SINGLE

YES

.33 W

.5 A

1

Other Transistors

160

150 Cel

Matte Tin (Sn)

e3

BCY89 by Texas Instruments

BCY89

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;

NPN

SINGLE

NO

10 MHz

.15 W

.03 A

1

Other Transistors

100

175 Cel

BSS84AKV,115 by NXP Semiconductors

BSS84AKV,115

NXP Semiconductors

P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.17 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.17 A

1

e3

30

260

IRLML6402PBF by Infineon Technologies

IRLML6402PBF

Infineon Technologies

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;

P-CHANNEL

SINGLE

YES

1.3 W

ENHANCEMENT MODE

1

3.7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.7 A

BC846B by Vishay Intertechnology

BC846B

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

1

Other Transistors

200

150 Cel

Matte Tin (Sn)

1

e3

2N7002DW-G by Weitron Technology

2N7002DW-G

Weitron Technology

Other Transistors;

BC547C by Vishay Intertechnology

BC547C

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;

NPN

SINGLE

NO

.5 W

.1 A

1

Other Transistors

420

150 Cel

BC856B by Vishay Intertechnology

BC856B

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

PNP

SINGLE

YES

.31 W

.1 A

1

Other Transistors

200

150 Cel

Matte Tin (Sn)

e3

BC807-40 by Vishay Intertechnology

BC807-40

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 250;

PNP

SINGLE

YES

.35 W

.5 A

1

Other Transistors

250

150 Cel

Matte Tin (Sn)

e3

BC547B-G by Weitron Technology

BC547B-G

Weitron Technology

Other Transistors;

BC807-25 by Vishay Intertechnology

BC807-25

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A; Terminal Finish: Matte Tin (Sn);

PNP

SINGLE

YES

.35 W

.5 A

1

Other Transistors

160

150 Cel

Matte Tin (Sn)

e3

BC857B by Vishay Intertechnology

BC857B

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200;

PNP

SINGLE

YES

.31 W

.1 A

1

Other Transistors

200

150 Cel

Matte Tin (Sn)

e3

MPSA42 by Texas Instruments

MPSA42

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

NPN

SINGLE

NO

50 MHz

.625 W

.5 A

1

Other Transistors

40

150 Cel

MPS-A42 by General Electric Solid State

MPS-A42

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

NPN

SINGLE

NO

50 MHz

.625 W

.5 A

1

Other Transistors

40

150 Cel

FDN360P-F095 by Fairchild Semiconductor

FDN360P-F095

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2 A; JESD-609 Code: e3;

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin (Sn)

2 A

1

e3

30

260

FDN360P-NBGT003B by Fairchild Semiconductor

FDN360P-NBGT003B

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 2 A;

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin (Sn)

2 A

1

e3

30

260

FDN306P-F095 by Fairchild Semiconductor

FDN306P-F095

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

2.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin (Sn)

2.6 A

1

e3

30

260

BD139 by Texas Instruments

BD139

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

NPN

SINGLE

NO

250 MHz

8 W

1.5 A

1

Other Transistors

40

150 Cel

BC847B/DG,215 by NXP Semiconductors

BC847B/DG,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

200

150 Cel

BSS83PE6327 by Infineon Technologies

BSS83PE6327

Infineon Technologies

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

P-CHANNEL

SINGLE

YES

.36 W

ENHANCEMENT MODE

1

.33 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.33 A

1

260

BC557B by Texas Instruments

BC557B

Texas Instruments

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 180;

PNP

SINGLE

NO

.625 W

.1 A

1

Other Transistors

180

150 Cel

FDS4685-NF074 by Fairchild Semiconductor

FDS4685-NF074

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;

P-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

8.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

8.2 A

1

e3

30

260

BC327-25 by Texas Instruments

BC327-25

Texas Instruments

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;

PNP

SINGLE

NO

.625 W

.8 A

1

Other Transistors

160

150 Cel

40474 by National Semiconductor

40474

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .18 W; Maximum Collector Current (IC): .05 A;

NPN

SINGLE

NO

900 MHz

.18 W

.05 A

1

Other Transistors

275

175 Cel

Tin/Lead (Sn/Pb)

e0

BD138 by Texas Instruments

BD138

Texas Instruments

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

PNP

SINGLE

NO

75 MHz

8 W

1.5 A

1

Other Transistors

40

150 Cel

BD140 by Texas Instruments

BD140

Texas Instruments

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

PNP

SINGLE

NO

75 MHz

8 W

1.5 A

1

Other Transistors

40

150 Cel

MPS-A92 by General Electric Solid State

MPS-A92

General Electric Solid State

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

PNP

SINGLE

NO

50 MHz

.625 W

.5 A

1

Other Transistors

40

150 Cel

Tin/Lead (Sn/Pb)

e0

BC817-16 by Vishay Intertechnology

BC817-16

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; Terminal Finish: Matte Tin (Sn);

NPN

SINGLE

YES

.33 W

.5 A

1

Other Transistors

100

150 Cel

Matte Tin (Sn)

e3

BC847C/AU,215 by NXP Semiconductors

BC847C/AU,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

420

150 Cel

FDV302P-NB8V001 by Fairchild Semiconductor

FDV302P-NB8V001

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;

P-CHANNEL

SINGLE

YES

.35 W

ENHANCEMENT MODE

1

.12 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.12 A

1

e3

30

260

BDX53C by Texas Instruments

BDX53C

Texas Instruments

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;

NPN

DARLINGTON

NO

20 MHz

60 W

8 A

Other Transistors

750

150 Cel

BD243C by Texas Instruments

BD243C

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;

NPN

SINGLE

NO

65 W

8 A

1

Other Transistors

30

150 Cel

2SC5200O(Q) by Toshiba

2SC5200O(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; No. of Elements: 1;

NPN

SINGLE

NO

150 W

15 A

1

Other Transistors

80

150 Cel

30

260

BC546B by Texas Instruments

BC546B

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

NPN

SINGLE

NO

150 MHz

.625 W

.1 A

1

Other Transistors

200

150 Cel

BC337-16 by Texas Instruments

BC337-16

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;

NPN

SINGLE

NO

.625 W

.8 A

1

Other Transistors

100

150 Cel

NX3008CBKS,115 by NXP Semiconductors

NX3008CBKS,115

NXP Semiconductors

N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .445 W; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .35 A;

N-CHANNEL AND P-CHANNEL

YES

.445 W

ENHANCEMENT MODE

.35 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.35 A

1

e3

30

260