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Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.

Other Function Transistors

Available Parts 223

Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
S1236 by Toshiba

S1236

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

4 A

SINGLE

40

e0

1

140 Cel

NPN

40 W

Other Transistors

NO

Tin/Lead (Sn/Pb)

10 MHz

TPC8109(TE12L) by Toshiba

TPC8109(TE12L)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Drain Current (Abs) (ID): 10 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

10 A

10 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.9 W

Other Transistors

YES

2N5952-D74Z by Fairchild Semiconductor

2N5952-D74Z

Fairchild Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3; Field Effect Transistor Technology: JUNCTION;

JUNCTION

e3

150 Cel

N-CHANNEL

.35 W

Other Transistors

NO

Matte Tin (Sn)

DP200 by Kodenshi Auk

DP200

Kodenshi Auk

Kodenshi Auk's DP200 is a PNP transistor with max power dissipation of 0.625W, ideal for low-power applications. With a min hFE of 40 and max IC of 1A, it operates up to 150°C, making it suitable for various electronic circuits requiring single configuration transistors.

1 A

SINGLE

40

1

150 Cel

PNP

.625 W

Other Transistors

NO

BC857BF-E6327 by Infineon Technologies

BC857BF-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 220;

.1 A

SINGLE

220

1

150 Cel

PNP

.25 W

Other Transistors

YES

BC860BF-E6327 by Infineon Technologies

BC860BF-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

.1 A

SINGLE

220

1

150 Cel

PNP

.25 W

Other Transistors

YES

BFP405F-E6327 by Infineon Technologies

BFP405F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .055 W; Maximum Collector Current (IC): .012 A;

.012 A

SINGLE

50

1

1

150 Cel

260

NPN

.055 W

Other Transistors

YES

18000 MHz

BFP420F-E6327 by Infineon Technologies

BFP420F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

50

1

1

150 Cel

260

NPN

.16 W

Other Transistors

YES

18000 MHz

BFR360L3-E6327 by Infineon Technologies

BFR360L3-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

90

1

150 Cel

NPN

.21 W

Other Transistors

YES

11000 MHz

BFR360F-E6327 by Infineon Technologies

BFR360F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

60

1

1

150 Cel

260

NPN

.21 W

Other Transistors

YES

11000 MHz

BFR380F-E6327 by Infineon Technologies

BFR380F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .38 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

90

1

1

150 Cel

260

NPN

.38 W

Other Transistors

YES

11000 MHz

BFS483-E6327 by Infineon Technologies

BFS483-E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A; Minimum DC Current Gain (hFE): 50;

.065 A

50

1

150 Cel

260

NPN

.45 W

Other Transistors

YES

6000 MHz

BSP61-E6327 by Infineon Technologies

BSP61-E6327

Infineon Technologies

PNP; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

1 A

DARLINGTON

1000

1

150 Cel

260

PNP

1.5 W

Other Transistors

YES

BSP60-E6433 by Infineon Technologies

BSP60-E6433

Infineon Technologies

PNP; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 1000;

1 A

DARLINGTON

1000

e0

1

150 Cel

235

PNP

1.5 W

Other Transistors

YES

TIN LEAD

BSP51-E6327 by Infineon Technologies

BSP51-E6327

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

1 A

DARLINGTON

1000

1

150 Cel

260

NPN

1.5 W

Other Transistors

YES

SMBT3904U-E6327 by Infineon Technologies

SMBT3904U-E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;

.2 A

30

1

150 Cel

260

NPN

.33 W

Other Transistors

YES

300 MHz

SMBTA42-E6433 by Infineon Technologies

SMBTA42-E6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

25

1

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

50 MHz

SMBTA92-E6433 by Infineon Technologies

SMBTA92-E6433

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

25

1

1

150 Cel

260

PNP

.36 W

Other Transistors

YES

50 MHz

AOD403L by Alpha & Omega Semiconductor

AOD403L

Alpha & Omega Semiconductor

Other Transistors;

BFR182W-E6327 by Infineon Technologies

BFR182W-E6327

Infineon Technologies

BFR182W-E6327 by Infineon Technologies is an NPN transistor with a single configuration, suitable for surface mount applications. It features a max power dissipation of 0.25W, min DC current gain of 50, and nominal transition frequency of 6000MHz. Ideal for high-frequency amplification in electronic circuits with operating temperatures up to 150°C.

.035 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

6000 MHz

SI3443DVTRPBF by International Rectifier

SI3443DVTRPBF

International Rectifier

SI3443DVTRPBF by International Rectifier is a P-CHANNEL FET with 4.4A max drain current and 2W power dissipation. Ideal for applications requiring single configuration, such as power management systems operating at up to 150°C.

SINGLE

4.4 A

4.4 A

METAL-OXIDE SEMICONDUCTOR

e3

2

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

2 W

Other Transistors

YES

MATTE TIN

30

IRF5810TRPBF by International Rectifier

IRF5810TRPBF

International Rectifier

IRF5810TRPBF by International Rectifier is a P-CHANNEL MOSFET with 2.9A max drain current and 0.96W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic devices requiring efficient power management.

2.9 A

2.9 A

METAL-OXIDE SEMICONDUCTOR

e3

2

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.96 W

Other Transistors

YES

MATTE TIN

30

IRF7751TRPBF by International Rectifier

IRF7751TRPBF

International Rectifier

IRF7751TRPBF by International Rectifier is a P-CHANNEL FET with 4.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring high power efficiency and thermal performance.

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

e3

2

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

1 W

Other Transistors

YES

MATTE TIN

30

2N4338-E3 by Vishay Intertechnology

2N4338-E3

Vishay Intertechnology

Vishay Intertechnology's 2N4338-E3 is an N-CHANNEL transistor with a max power dissipation of 0.3W and max operating temp of 200°C. It utilizes JUNCTION technology, has matte tin terminal finish, and can withstand peak reflow temp of 260°C. Ideal for various electronic applications requiring high temperature resistance.

JUNCTION

e3

1

200 Cel

260

N-CHANNEL

.3 W

Other Transistors

NO

MATTE TIN

40

2N4339-E3 by Vishay Intertechnology

2N4339-E3

Vishay Intertechnology

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: JUNCTION; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 200 Cel;

JUNCTION

e3

1

200 Cel

N-CHANNEL

.3 W

Other Transistors

NO

Matte Tin (Sn)

AO6405L by Alpha & Omega Semiconductor

AO6405L

Alpha & Omega Semiconductor

AO6405L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 5A max drain current and 2W power dissipation. Ideal for applications requiring single configuration, enhancement mode operation, and surface mount compatibility.

SINGLE

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

2 W

Other Transistors

YES

AOB416 by Alpha & Omega Semiconductor

AOB416

Alpha & Omega Semiconductor

Other Transistors;

BFN38-E6327 by Infineon Technologies

BFN38-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 25;

.2 A

SINGLE

25

1

1

150 Cel

260

NPN

1.5 W

Other Transistors

YES

BSP92P-E6327 by Infineon Technologies

BSP92P-E6327

Infineon Technologies

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): .26 A;

SINGLE

.26 A

.26 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

255

P-CHANNEL

1.8 W

Other Transistors

YES

BSP315P-E6327 by Infineon Technologies

BSP315P-E6327

Infineon Technologies

BSP315P-E6327 by Infineon is a P-CHANNEL transistor with 1.17A max drain current and 1.8W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic devices requiring efficient power management in compact designs.

SINGLE

1.17 A

1.17 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

255

P-CHANNEL

1.8 W

Other Transistors

YES

BSP317P-E6327 by Infineon Technologies

BSP317P-E6327

Infineon Technologies

BSP317P-E6327 by Infineon is a P-CHANNEL transistor with max drain current of 0.43A and power dissipation of 1.8W. It operates in enhancement mode, suitable for surface mount applications in temperatures up to 150°C. Ideal for compact electronic devices requiring efficient power management.

SINGLE

.43 A

.43 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

255

P-CHANNEL

1.8 W

Other Transistors

YES

BSP316P-E6327 by Infineon Technologies

BSP316P-E6327

Infineon Technologies

BSP316P-E6327 by Infineon is a P-CHANNEL transistor with max drain current of 0.68A and power dissipation of 1.8W. Ideal for enhancement mode operation in applications requiring high temperature tolerance up to 150°C, such as power management systems and automotive electronics.

SINGLE

.68 A

.68 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

235

P-CHANNEL

1.8 W

Other Transistors

YES

BFR705L3RH-E6327 by Infineon Technologies

BFR705L3RH-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .04 W; Maximum Collector Current (IC): .01 A; Maximum Operating Temperature: 150 Cel;

.01 A

SINGLE

160

1

1

150 Cel

260

NPN

.04 W

Other Transistors

YES

BC818K-25-E6327 by Infineon Technologies

BC818K-25-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1;

.5 A

SINGLE

160

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

BC818K-40-E6327 by Infineon Technologies

BC818K-40-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1;

.5 A

SINGLE

250

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

BC817K-25W-E6433 by Infineon Technologies

BC817K-25W-E6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

SINGLE

160

1

150 Cel

NPN

.25 W

Other Transistors

YES

BC856S-E6433 by Infineon Technologies

BC856S-E6433

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 200;

.1 A

200

150 Cel

PNP

.25 W

Other Transistors

YES

BC858BL3-E6327 by Infineon Technologies

BC858BL3-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

SINGLE

220

1

1

150 Cel

260

PNP

.25 W

Other Transistors

YES

BC847BF-E6327 by Infineon Technologies

BC847BF-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200;

.1 A

SINGLE

200

1

150 Cel

NPN

.25 W

Other Transistors

YES

BFP540FESD-E6327 by Infineon Technologies

BFP540FESD-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

21000 MHz

AO6804A by Alpha & Omega Semiconductor

AO6804A

Alpha & Omega Semiconductor

Other Transistors;

2SC4957-A by Renesas Electronics

2SC4957-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Maximum Collector Current (IC): .03 A; No. of Elements: 1;

.03 A

SINGLE

75

1

150 Cel

NPN

.18 W

Other Transistors

YES

2SC4957-T1-A by Renesas Electronics

2SC4957-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.18 W

Other Transistors

YES

NE687M33-A by Renesas Electronics

NE687M33-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .09 W; Maximum Collector Current (IC): .03 A;

.03 A

SINGLE

70

1

150 Cel

NPN

.09 W

Other Transistors

YES

10000 MHz

NE687M33-T3-A by Renesas Electronics

NE687M33-T3-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .09 W; Maximum Collector Current (IC): .03 A;

.03 A

SINGLE

70

1

150 Cel

NPN

.09 W

Other Transistors

YES

10000 MHz

2SC4227-T1-A by Renesas Electronics

2SC4227-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .065 A; Minimum DC Current Gain (hFE): 40;

.065 A

SINGLE

40

1

150 Cel

NPN

.15 W

Other Transistors

YES

BD243CTU by Fairchild Semiconductor

BD243CTU

Fairchild Semiconductor

BD243CTU by Fairchild Semiconductor is an NPN transistor with a max power dissipation of 65W and max collector current of 6A. With a min DC current gain of 15, it operates up to 150°C making it suitable for various applications in electronics circuits.

6 A

SINGLE

15

e3

1

150 Cel

NPN

65 W

Other Transistors

NO

Matte Tin (Sn)

FDC602P-F095 by Fairchild Semiconductor

FDC602P-F095

Fairchild Semiconductor

FDC602P-F095 by Fairchild Semiconductor is a P-CHANNEL MOSFET with 5.5A max drain current and 1.6W max power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic circuits requiring high-power switching capabilities.

SINGLE

5.5 A

5.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.6 W

Other Transistors

YES