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IRF5810TRPBF

International Rectifier

IRF5810TRPBF by International Rectifier

IRF5810TRPBF by International Rectifier is a P-CHANNEL MOSFET with 2.9A max drain current and 0.96W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic devices requiring efficient power management.

Median Price

$0.221

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Nova Conductors

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Overview

Boost your electronic designs with the IRF5810TRPBF from International Rectifier. This P-CHANNEL enhancement mode transistor offers high-quality performance and reliability for a wide range of applications. With a maximum drain current of 2.9A and maximum power dissipation of 0.96W, this transistor is perfect for your surface mount projects. Trust in International Rectifier's field-effect transistor technology and experience the value and benefits that the IRF5810TRPBF can bring to your next design.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low resistance and high efficiency, making them ideal for power management applications.

Surface Mount: YES

Surface mount technology allows for compact and efficient circuit designs, making this transistor easy to integrate into various electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and can be easily controlled by varying the gate voltage, providing flexibility in circuit design.

Maximum Drain Current (Abs) (ID): 2.9 A

With a high maximum drain current, this transistor can handle demanding applications requiring significant power output.

Maximum Power Dissipation (Abs): 0.96 W

The low power dissipation of this transistor helps in reducing heat generation and improving overall efficiency of the circuit.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low on-state resistance, making this transistor suitable for high frequency applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range ensures reliable performance even in challenging thermal environments.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and ensures reliable connections, enhancing the durability of the transistor.

Moisture Sensitivity Level (MSL): 2

MSL 2 indicates that this transistor has moderate sensitivity to moisture, making it suitable for a wide range of indoor and outdoor applications.

Maximum Time At Peak Reflow Temperature (s): 30

The short time required for peak reflow temperature helps in efficient and reliable soldering process during manufacturing.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand rigorous soldering processes without compromising its performance.

Technical Specifications

Other Function Transistors IRF5810TRPBF attributes and parameters. Explore more Other Function Transistors devices from International Rectifier

Specs

Maximum Drain Current (Abs) (ID):

2.9 A

Maximum Drain Current (ID):

2.9 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

IRF5810TRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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