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IRF5806TRPBF

Infineon Technologies

IRF5806TRPBF by Infineon Technologies

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Operating Mode: ENHANCEMENT MODE; Maximum Time At Peak Reflow Temperature (s): 30;

Median Price

$0.164

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 57,000 parts In-Stock

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-

100+ parts

$0.170

1k+ parts

$0.141

10k+ parts

$0.125

57,000

-

$0.170

$0.141

$0.125

Verical

USA . 57,000 parts In-Stock

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$0.157

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$0.157

Distributors (In-Stock)

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Chip Stock

USA . 39,500 parts In-Stock

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39,500

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QIE Inc.

USA . 3,090 parts In-Stock

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3,090

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Connect4Technologies Inc.

Canada . 2,715 parts In-Stock

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2,715

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Global Solutions Electronics Company

USA . 2,268 parts In-Stock

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2,268

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Digiode

USA . 784 parts In-Stock

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784

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Vyrian

USA . 406 parts In-Stock

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406

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Prism Electronics

USA . 145 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 19,971 parts In-Stock

1+ parts

$1.756

100+ parts

$1.686

1k+ parts

$1.616

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19,971

$1.756

$1.686

$1.616

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Kepictronics

USA . 306,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 17,896 parts In-Stock

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,729 parts In-Stock

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6,729

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USA . 6,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,289 parts In-Stock

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Microchip USA

USA . 4,016 parts In-Stock

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4,016

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QUARKTWIN TECHNOLOGY LTD

USA . 2,605 parts In-Stock

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2,605

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Glotronic Ltd.

UK . 1,920 parts In-Stock

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Corphita

USA . 289 parts In-Stock

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289

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Technical Specifications

Other Function Transistors IRF5806TRPBF attributes and parameters. Explore more Other Function Transistors devices from Infineon Technologies

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

2

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

IRF5806TRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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