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Photodiodes

A photodiode is a type of electronic component that uses light to generate an electric current. It is a semiconductor device that is designed to respond to the presence of light by producing a flow of electrons. Photodiodes are widely used in a variety of applications, including in cameras, optical communication systems, and medical equipment.

Photodiodes work by converting light energy into electrical energy. When light hits the photodiode, it creates an electric current that is proportional to the intensity of the light. This current can be measured and used to determine the presence, intensity, and wavelength of the light.

Photodiodes are available in different types, each with their own characteristics and applications. The most common types of photodiodes are PIN photodiodes, avalanche photodiodes, and Schottky photodiodes.

PIN photodiodes are widely used in optical communication systems and are designed for high-speed and low-noise applications. They have a wide spectral response range and are able to detect both visible and infrared light.

Avalanche photodiodes are used in applications that require high sensitivity and low noise, such as in low-light-level imaging and spectroscopy. They are able to generate high gain and high-speed signals, making them ideal for use in low-light-level applications.

Schottky photodiodes are used in applications that require high-speed and high-frequency response, such as in microwave and millimeter-wave detection. They have a low junction capacitance and are able to detect fast-changing signals.

Photodiodes

Available Parts 24

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Configuration Maximum Dark Current Infrared (IR) Range JESD-609 Code Nominal Light Current Mounting Feature No. of Functions Maximum Operating Temperature Minimum Operating Temperature Optoelectronic Type Packing Method Peak Wavelength (nm) Maximum Response Time Minimum Reverse Breakdown Voltage Maximum Reverse Voltage Semiconductor Material Shape Size Sub-Category Terminal Finish
PH305 by Renesas Electronics

PH305

Renesas Electronics

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 80 Cel; JESD-609 Code: e0; Semiconductor Material: Silicon;

30 nA

e0

THROUGH HOLE MOUNT

80 Cel

PIN PHOTODIODE

.00000005 s

20 V

Silicon

Photo Diodes

Tin/Lead (Sn/Pb)

SDP8276-001 by Honeywell Sensing And Control

SDP8276-001

Honeywell Sensing And Control

Honeywell's SDP8276-001 photodiode has a max operating temp of 85°C and min of -40°C. With max dark current of 50nA and reverse voltage of 50V, it uses silicon semiconductor material for THROUGH HOLE MOUNT applications.

50 nA

THROUGH HOLE MOUNT

85 Cel

-40 Cel

50 V

Silicon

Photo Diodes

SFH2504AN23 by Osram Opto Semiconductors

SFH2504AN23

Osram Opto Semiconductors

SFH2504AN23 by Osram Opto Semiconductors is a PIN photodiode with max operating temp of 100°C, min of -40°C, and max dark current of 5nA. Ideal for applications requiring fast response time (0.00000001s) and reverse voltage up to 30V.

5 nA

THROUGH HOLE MOUNT

100 Cel

-40 Cel

PIN PHOTODIODE

.00000001 s

30 V

Silicon

Photo Diodes

PD15-22C/TR8 by Everlight Electronics

PD15-22C/TR8

Everlight Electronics

The Everlight Electronics PD15-22C/TR8 is a single PIN photodiode with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with min reverse breakdown voltage of 32V. Ideal for applications requiring infrared detection in a compact 2.8mm rectangular shape.

SINGLE

10 nA

YES

.0065 mA

1

85 Cel

-25 Cel

PIN PHOTODIODE

940

32 V

RECTANGULAR

2.8 mm

SFH2701 by Osram Opto Semiconductors

SFH2701

Osram Opto Semiconductors

SFH2701 by Osram Opto Semiconductors is a single PIN photodiode with peak wavelength of 820 nm. It operates b/w -40 to 85°C, has max response time of 2 ns, and can handle up to 15V reverse voltage. Ideal for IR applications, it comes in a compact 1.85mm size for surface mounting.

SINGLE

5 nA

YES

.0014 mA

SURFACE MOUNT

1

85 Cel

-40 Cel

PIN PHOTODIODE

TR, 7 INCH

820

.000000002 s

15 V

Silicon

RECTANGULAR

1.85 mm

SFH2400-Z by Osram Opto Semiconductors

SFH2400-Z

Osram Opto Semiconductors

SFH2400-Z by Osram Opto Semiconductors is a single PIN photodiode with 1mm size and peak wavelength of 850nm. It operates b/w -40 to 100°C, has a reverse breakdown voltage of 50V, and nominal light current of 0.006mA. Ideal for applications requiring infrared detection in a square shape configuration.

SINGLE

5 nA

YES

.006 mA

1

100 Cel

-40 Cel

PIN PHOTODIODE

850

50 V

SQUARE

1 mm

SFH5701 by Osram Opto Semiconductors

SFH5701

Osram Opto Semiconductors

AVALANCHE PHOTODIODE;

AVALANCHE PHOTODIODE

MICROFJ-30020-TSV-TR1 by Onsemi

MICROFJ-30020-TSV-TR1

Onsemi

MICROFJ-30020-TSV-TR1 by Onsemi is a 3.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, with min reverse breakdown voltage of 24.2V and max dark current of 720nA. Ideal for optoelectronic applications requiring high sensitivity and precision in temperature-controlled environments.

COMPLEX

720 nA

NO

1

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

420

24.2 V

SQUARE

3.07 mm

MICROFJ-30035-TSV-TR1 by Onsemi

MICROFJ-30035-TSV-TR1

Onsemi

MICROFJ-30035-TSV-TR1 by Onsemi is a 3.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40°C to 85°C, has a min reverse breakdown voltage of 24.2V, and a max dark current of 3000nA. Ideal for applications requiring high sensitivity in optoelectronic systems.

COMPLEX

3000 nA

NO

1

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

420

24.2 V

SQUARE

3.07 mm

MICROFJ-40035-TSV-TR1 by Onsemi

MICROFJ-40035-TSV-TR1

Onsemi

MICROFJ-40035-TSV-TR1 by Onsemi is a 3.93mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, with min reverse breakdown voltage of 24.2V and max dark current of 4000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.

COMPLEX

4000 nA

NO

1

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

420

24.2 V

SQUARE

3.93 mm

MICROFJ-60035-TSV-TR1 by Onsemi

MICROFJ-60035-TSV-TR1

Onsemi

MICROFJ-60035-TSV-TR1 by Onsemi is a 6.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40°C to 85°C, has a min reverse breakdown voltage of 24.2V, and a max dark current of 12000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in detecting light signals.

COMPLEX

12000 nA

NO

1

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

420

24.2 V

SQUARE

6.07 mm

MICROFJ-60035-TSV-TR by Onsemi

MICROFJ-60035-TSV-TR

Onsemi

MICROFJ-60035-TSV-TR by Onsemi is a 6.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has min reverse breakdown voltage of 24.2V, and max dark current of 12000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.

COMPLEX

12000 nA

NO

1

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

420

24.2 V

SQUARE

6.07 mm

MICROFC-10010-SMT-TR1 by Onsemi

MICROFC-10010-SMT-TR1

Onsemi

MICROFC-10010-SMT-TR1 by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 3nA. Ideal for optoelectronic applications requiring high sensitivity and precision in surface mount configurations.

LOW NOISE

COMPLEX

3 nA

SURFACE MOUNT

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

420

24.2 V

Silicon

RECTANGULAR

1 mm

MICROFC-10010-SMT-TR by Onsemi

MICROFC-10010-SMT-TR

Onsemi

MICROFC-10010-SMT-TR by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 to 85 °C, has min reverse breakdown voltage of 24.2V, and max dark current of 3nA. Ideal for surface mount applications in optoelectronics due to its silicon semiconductor material and rectangular shape.

LOW NOISE

COMPLEX

3 nA

SURFACE MOUNT

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

420

24.2 V

Silicon

RECTANGULAR

1 mm

MICROFC-10020-SMT-TR1 by Onsemi

MICROFC-10020-SMT-TR1

Onsemi

MICROFC-10020-SMT-TR1 by Onsemi is a 1mm rectangular avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 16nA. Ideal for optoelectronic applications requiring surface mount configuration.

LOW NOISE

COMPLEX

16 nA

SURFACE MOUNT

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

420

24.2 V

Silicon

RECTANGULAR

1 mm

MICROFC-10020-SMT-TR by Onsemi

MICROFC-10020-SMT-TR

Onsemi

MICROFC-10020-SMT-TR by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 16nA. Ideal for surface mount applications in optoelectronics.

LOW NOISE

COMPLEX

16 nA

SURFACE MOUNT

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

420

24.2 V

Silicon

RECTANGULAR

1 mm

MICROFC-10035-SMT-TR1 by Onsemi

MICROFC-10035-SMT-TR1

Onsemi

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Configuration: COMPLEX; Additional Features: LOW NOISE; Minimum Operating Temperature: -40 Cel; Semiconductor Material: Silicon;

LOW NOISE

COMPLEX

49 nA

SURFACE MOUNT

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

420

24.2 V

Silicon

RECTANGULAR

1 mm

MICROFC-30035-SMT-TR1 by Onsemi

MICROFC-30035-SMT-TR1

Onsemi

MICROFC-30035-SMT-TR1 by Onsemi is a 3 mm square avalanche photodiode with a peak wavelength of 420 nm. It has a max operating temperature of 85°C and a min reverse breakdown voltage of 24.2 V. This photodiode is suitable for applications requiring high sensitivity in low light conditions, such as optical communication systems or medical imaging devices.

LOW NOISE

COMPLEX

443 nA

SURFACE MOUNT

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

420

24.2 V

Silicon

SQUARE

3 mm

MICROFC-30050-SMT-TR1 by Onsemi

MICROFC-30050-SMT-TR1

Onsemi

MICROFC-30050-SMT-TR1 by Onsemi is a 3mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 914nA. Ideal for optoelectronic applications requiring surface mount configuration.

LOW NOISE

COMPLEX

914 nA

SURFACE MOUNT

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

420

24.2 V

Silicon

SQUARE

3 mm

MICROFC-60035-SMT-TR1 by Onsemi

MICROFC-60035-SMT-TR1

Onsemi

MICROFC-60035-SMT-TR1 by Onsemi is a 6mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 1750nA. Ideal for optoelectronic applications requiring high sensitivity and precision in surface mount configurations.

LOW NOISE

COMPLEX

1750 nA

SURFACE MOUNT

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

420

24.2 V

Silicon

SQUARE

6 mm

SFH2401 by Osram Opto Semiconductors

SFH2401

Osram Opto Semiconductors

PIN PHOTODIODE;

PIN PHOTODIODE

K857PE-GS15 by Vishay Intertechnology

K857PE-GS15

Vishay Intertechnology

PIN PHOTODIODE;

PIN PHOTODIODE

K857PH-GS15 by Vishay Intertechnology

K857PH-GS15

Vishay Intertechnology

PIN PHOTODIODE;

PIN PHOTODIODE

MTPD2601T-100 by Marktech Optoelectronics

MTPD2601T-100

Marktech Optoelectronics

PIN PHOTODIODE;

PIN PHOTODIODE