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MICROFJ-40035-TSV-TR1

Onsemi

MICROFJ-40035-TSV-TR1 by Onsemi

MICROFJ-40035-TSV-TR1 by Onsemi is a 3.93mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, with min reverse breakdown voltage of 24.2V and max dark current of 4000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.

Median Price

$71.595

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 2,646 parts In-Stock

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$57.837

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2,646

$57.837

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Mouser Electronics

USA . 5 parts In-Stock

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$68.830

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$59.110

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5

$68.830

$59.110

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DigiKey

USA . 6 parts In-Stock

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$74.360

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$61.124

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6

$74.360

$61.124

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RS (Exports)

UK . 7 parts In-Stock

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$78.556

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$64.410

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7

$78.556

$64.410

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Distributors (In-Stock)

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Digiode

USA . 811 parts In-Stock

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$54.596

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811

$54.596

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Nova Conductors

Japan . 70 parts In-Stock

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$64.210

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70

$64.210

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Vyrian

USA . 4,584 parts In-Stock

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Flip Electronics

USA . 2,646 parts In-Stock

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2,646

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 354 parts In-Stock

1+ parts

$0.080

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354

$0.080

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Corphita

USA . 375 parts In-Stock

1+ parts

$51.723

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375

$51.723

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Ampacity Inc.

Singapore . 7 parts In-Stock

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$56.440

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7

$56.440

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Corohmni

South Africa . 390 parts In-Stock

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$57.470

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390

$57.470

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Aranea Global

USA . 2,000 parts In-Stock

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$62.926

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$60.409

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2,000

$62.926

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$60.409

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Allen Electronics Distributors

USA . 7 parts In-Stock

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$64.260

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7

$64.260

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Problanco Electronics

Mexico . 7,992 parts In-Stock

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TANS Electronics

Latvia . 7,915 parts In-Stock

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SupplyDigital Components

Austria . 3,465 parts In-Stock

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Kulean Microsystems

USA . 1,498 parts In-Stock

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1,498

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Perfect Parts

USA . 280 parts In-Stock

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280

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Argo Parts USA

USA . 194 parts In-Stock

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194

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UHIMA Technologies

Türkiye . 135 parts In-Stock

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Authorized Procurement Solutions

USA . 60 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Unleash the power of light sensing technology with the MICROFJ-40035-TSV-TR1 from Onsemi. As a leading manufacturer in the industry, Onsemi's photodiodes offer unparalleled quality and reliability. Designed for complex configurations, this avalanche photodiode boasts a peak wavelength of 420 nm and operates at temperatures ranging from -40°C to 85°C. Ideal for a wide range of applications, this square-shaped photodiode delivers exceptional performance, accuracy, and sensitivity. Experience the value and benefits of precision sensing with the MICROFJ-40035-TSV-TR1 by Onsemi.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for advanced features and functionality, making this product suitable for more specialized applications.

Size: 3.93 mm

The compact size of this photodiode makes it easy to integrate into various systems and devices without taking up much space.

Peak Wavelength (nm): 420

The peak wavelength of 420 nm indicates that this photodiode is optimized for detecting light in the blue spectrum, making it ideal for applications where blue light detection is important.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes have high sensitivity and fast response times, making this product suitable for applications requiring precise light detection and measurement.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this photodiode can withstand elevated temperatures, making it suitable for use in harsh environments or industrial applications.

Minimum Reverse Breakdown Voltage: 24.2 V

The high minimum reverse breakdown voltage ensures that the photodiode can handle reverse bias conditions without damage, making it a durable and reliable choice for long-term use.

Shape: SQUARE

The square shape of this photodiode makes it easy to align and mount in systems, providing precise and stable detection of light signals.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this photodiode can function reliably in cold environments or in applications where temperature variations are common.

Maximum Dark Current: 4000 nA

The low maximum dark current of 4000 nA ensures that the photodiode produces minimal noise in the absence of light, resulting in accurate and dependable light detection.

Technical Specifications

Photodiodes MICROFJ-40035-TSV-TR1 attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

COMPLEX

Maximum Dark Current:

4000 nA

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Shape:

SQUARE

Size:

3.93 mm

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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