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MICROFC-10010-SMT-TR1

Onsemi

MICROFC-10010-SMT-TR1 by Onsemi

MICROFC-10010-SMT-TR1 by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 3nA. Ideal for optoelectronic applications requiring high sensitivity and precision in surface mount configurations.

Median Price

$40.806

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 886 parts In-Stock

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$39.852

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Nova Conductors

Japan . 50 parts In-Stock

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$41.760

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$41.760

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Vyrian

USA . 5,292 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 244 parts In-Stock

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$10.271

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Ampacity Inc.

Singapore . 179 parts In-Stock

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$36.230

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Corphita

USA . 2,424 parts In-Stock

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$37.755

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Corohmni

South Africa . 316 parts In-Stock

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$40.106

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Aranea Global

USA . 500 parts In-Stock

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$40.925

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$39.288

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500

$40.925

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Continental Prestige Electronics

USA . 6 parts In-Stock

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$41.210

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SupplyDigital Components

Austria . 4,057 parts In-Stock

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Kulean Microsystems

USA . 3,116 parts In-Stock

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Argo Parts USA

USA . 1,507 parts In-Stock

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Problanco Electronics

Mexico . 518 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 135 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 2 parts In-Stock

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Overview

Enhance your optical sensing applications with the MICROFC-10010-SMT-TR1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality photodiodes like no other. The AVALANCHE PHOTODIODE configuration offers peak performance, while the compact 1 mm size makes it ideal for space-constrained designs. Whether you're working on medical devices, industrial automation, or security systems, this product guarantees accuracy and reliability. Trust Onsemi to provide cutting-edge technology that exceeds expectations. Elevate your projects with the MICROFC-10010-SMT-TR1 today.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for advanced functionality and performance in a variety of applications.

Size: 1 mm

The small size makes it suitable for compact designs and integration into tight spaces.

Peak Wavelength (nm): 420

The peak wavelength of 420 nm is ideal for applications requiring sensitivity in the blue light spectrum.

Optoelectronic Type: AVALANCHE PHOTODIODE

The avalanche photodiode type offers high sensitivity and fast response times, making it suitable for applications requiring precision detection.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliability and performance in a wide range of environmental conditions.

Minimum Reverse Breakdown Voltage: 24.2 V

The high minimum reverse breakdown voltage provides protection against reverse current flow, ensuring the photodiode's longevity.

Shape: RECTANGULAR

The rectangular shape allows for easy integration and alignment within electronic systems.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature enables usage in cold environments without compromising performance.

Maximum Dark Current: 3 nA

The low maximum dark current ensures minimal noise and high signal-to-noise ratio in low-light conditions.

Packing Method: TR

The TR packing method provides protection during transport and handling, ensuring the product arrives in optimal condition.

Semiconductor Material: Silicon

The use of silicon as the semiconductor material offers stability, reliability, and high sensitivity in a wide range of applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies installation and allows for direct PCB integration, saving space and reducing assembly time.

Technical Specifications

Photodiodes MICROFC-10010-SMT-TR1 attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

COMPLEX

Maximum Dark Current:

3 nA

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Semiconductor Material:

Silicon

Shape:

RECTANGULAR

Size:

1 mm

Trade Compliance

MICROFC-10010-SMT-TR1 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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