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MICROFC-30035-SMT-TR

Onsemi

MICROFC-30035-SMT-TR by Onsemi

MICROFC-30035-SMT-TR by Onsemi is a 3mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, has reverse breakdown voltage of 24.2V, and dark current of 443nA. Ideal for optoelectronic applications requiring high sensitivity in surface mount configurations.

Median Price

$16.195

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,403 parts In-Stock

1+ parts

$15.440

100+ parts

-

1k+ parts

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10k+ parts

$11.810

3,403

$15.440

-

-

$11.810

DigiKey

USA . 1,508 parts In-Stock

1+ parts

$16.950

100+ parts

$13.814

1k+ parts

-

10k+ parts

$11.708

1,508

$16.950

$13.814

-

$11.708

Avnet

USA . 6,000 parts In-Stock

1+ parts

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$11.959

6,000

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$11.959

Verical

USA . 3,000 parts In-Stock

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$17.322

3,000

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$17.322

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$18.589

100+ parts

-

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50

$18.589

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-

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Digiode

USA . 253 parts In-Stock

1+ parts

$27.750

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253

$27.750

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Flip Electronics

USA . 36,000 parts In-Stock

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36,000

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Chip Stock

USA . 8,000 parts In-Stock

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8,000

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Vyrian

USA . 2,017 parts In-Stock

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2,017

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,420 parts In-Stock

1+ parts

$0.700

100+ parts

-

1k+ parts

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2,420

$0.700

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Corohmni

South Africa . 472 parts In-Stock

1+ parts

$18.218

100+ parts

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472

$18.218

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Continental Prestige Electronics

USA . 4,738 parts In-Stock

1+ parts

$18.589

100+ parts

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1k+ parts

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10k+ parts

$18.218

4,738

$18.589

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-

$18.218

Ampacity Inc.

Singapore . 1,735 parts In-Stock

1+ parts

$18.860

100+ parts

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1,735

$18.860

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Corphita

USA . 991 parts In-Stock

1+ parts

$26.289

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991

$26.289

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SupplyDigital Components

Austria . 5,113 parts In-Stock

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5,113

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Kulean Microsystems

USA . 4,570 parts In-Stock

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4,570

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TANS Electronics

Latvia . 2,373 parts In-Stock

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2,373

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UHIMA Technologies

Türkiye . 887 parts In-Stock

1+ parts

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887

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Argo Parts USA

USA . 687 parts In-Stock

1+ parts

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687

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Problanco Electronics

Mexico . 562 parts In-Stock

1+ parts

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562

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Overview

Discover the cutting-edge MICROFC-30035-SMT-TR by Onsemi, a top-tier photodiode that redefines excellence in optoelectronics. Manufactured by industry leader Onsemi, this advanced device boasts unparalleled quality and precision engineering. With a peak wavelength of 420nm and a square shape, this avalanche photodiode is ideal for a wide range of applications. From industrial automation to medical imaging, this versatile photodiode delivers superior performance in every setting. Experience the value of reliability and innovation with the MICROFC-30035-SMT-TR by Onsemi.

Feature Benefit Bullets

Configuration: COMPLEX

Complex configuration provides advanced functionality and versatility, making this photodiode suitable for a wide range of applications.

Size: 3 mm

Compact size allows for easy integration and installation in various equipment or devices.

Peak Wavelength (nm): 420

Operates at a specific peak wavelength of 420nm, suitable for applications requiring precise light detection or measurement at this wavelength.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiode design provides high sensitivity and fast response time, ideal for applications requiring high performance and accuracy in light detection.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures of up to 85°C, ensuring reliability and stability in challenging thermal conditions.

Minimum Reverse Breakdown Voltage: 24.2 V

High reverse breakdown voltage of 24.2V helps protect the photodiode from damage due to reverse biases, enhancing its durability and lifespan.

Shape: SQUARE

Square shape facilitates easy alignment and positioning in optical systems, contributing to accurate light detection and measurement.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold temperatures as low as -40°C, making it suitable for applications in harsh environmental conditions.

Maximum Dark Current: 443 nA

Low dark current of 443 nA ensures minimal noise and interference in light detection, improving the sensitivity and accuracy of the photodiode.

Packing Method: TR

TR packing method provides secure packaging and protection during transportation and handling, ensuring the integrity of the photodiode upon delivery.

Semiconductor Material: Silicon

Silicon semiconductor material offers high efficiency and sensitivity in light detection, making this photodiode a reliable and high-performance component.

Mounting Feature: SURFACE MOUNT

Surface mount design allows for easy and secure mounting on PCBs or other surfaces, simplifying integration into electronic systems or devices.

Technical Specifications

Photodiodes MICROFC-30035-SMT-TR attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

COMPLEX

Maximum Dark Current:

443 nA

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Semiconductor Material:

Silicon

Shape:

SQUARE

Size:

3 mm

Trade Compliance

MICROFC-30035-SMT-TR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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