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MICROFC-30020-SMT-TR

Onsemi

MICROFC-30020-SMT-TR by Onsemi

MICROFC-30020-SMT-TR by Onsemi is a 3mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a reverse breakdown voltage of 24.2V, and dark current of 142nA. Ideal for optoelectronic applications requiring surface mount configuration in silicon semiconductor materials.

Median Price

$16.950

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,734 parts In-Stock

1+ parts

$16.950

100+ parts

$13.814

1k+ parts

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10k+ parts

$11.708

1,734

$16.950

$13.814

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$11.708

Distributors (In-Stock)

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Digiode

USA . 2,186 parts In-Stock

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$23.560

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$23.560

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Vyrian

USA . 2,071 parts In-Stock

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$24.800

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2,071

$24.800

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Distributors (Availability)

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Corphita

USA . 1,160 parts In-Stock

1+ parts

$22.320

100+ parts

-

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1,160

$22.320

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Corohmni

South Africa . 76 parts In-Stock

1+ parts

$31.250

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76

$31.250

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Kulean Microsystems

USA . 5,209 parts In-Stock

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5,209

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TANS Electronics

Latvia . 5,029 parts In-Stock

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5,029

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SupplyDigital Components

Austria . 3,556 parts In-Stock

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Problanco Electronics

Mexico . 2,011 parts In-Stock

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UHIMA Technologies

Türkiye . 376 parts In-Stock

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Overview

Enhance your optical sensing applications with the MICROFC-30020-SMT-TR by Onsemi. As a leading manufacturer in the industry, Onsemi's photodiodes are renowned for their superior quality and reliability. This complex configuration avalanche photodiode offers peak performance with a peak wavelength of 420nm, making it ideal for a wide range of optoelectronic applications. With a compact 3mm size and surface mounting feature, this photodiode is perfect for space-constrained designs. Experience the value and benefits of Onsemi's cutting-edge technology with the MICROFC-30020-SMT-TR.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for improved performance and flexibility in various applications.

Size: 3 mm

The compact size makes it suitable for applications where space is limited.

Peak Wavelength (nm): 420

The peak wavelength of 420nm makes it ideal for applications requiring sensitivity in the blue light spectrum.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and low noise, making them suitable for low light applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows for reliable performance in harsh environments.

Minimum Reverse Breakdown Voltage: 24.2 V

The high reverse breakdown voltage ensures the photodiode can handle higher voltages without damage.

Shape: SQUARE

The square shape simplifies mounting and integration into electronic systems.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for use in cold environments without compromising performance.

Maximum Dark Current: 142 nA

The low dark current minimizes noise and improves the signal-to-noise ratio of the photodiode.

Packing Method: TR

The TR packing method ensures safe and secure transportation and storage of the photodiode.

Semiconductor Material: Silicon

Silicon is a commonly used semiconductor material known for its high sensitivity and low noise characteristics.

Mounting Feature: SURFACE MOUNT

The surface mount feature allows for easy and secure mounting on circuit boards for simplified integration.

Technical Specifications

Photodiodes MICROFC-30020-SMT-TR attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

COMPLEX

Maximum Dark Current:

142 nA

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Semiconductor Material:

Silicon

Shape:

SQUARE

Size:

3 mm

Trade Compliance

MICROFC-30020-SMT-TR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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