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MICROFC-10020-SMT

Onsemi

MICROFC-10020-SMT by Onsemi

MICROFC-10020-SMT by Onsemi is a 1mm rectangular avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has reverse breakdown voltage of 24.2V, and dark current of 16nA. Ideal for surface mount applications in optoelectronics for high sensitivity light detection.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 2,019 parts In-Stock

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Vyrian

USA . 1,599 parts In-Stock

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Problanco Electronics

Mexico . 7,923 parts In-Stock

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SupplyDigital Components

Austria . 6,219 parts In-Stock

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TANS Electronics

Latvia . 4,742 parts In-Stock

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Kulean Microsystems

USA . 4,041 parts In-Stock

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UHIMA Technologies

Türkiye . 898 parts In-Stock

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Corphita

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Corohmni

South Africa . 119 parts In-Stock

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Overview

Experience unparalleled quality and reliability with the MICROFC-10020-SMT photodiode from Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology and innovation. This surface-mount avalanche photodiode offers superior performance in a compact size, making it ideal for applications in industries such as telecommunications, industrial automation, and medical equipment. Trust Onsemi to provide you with a product that not only meets but exceeds your expectations, ensuring optimal results and value for your investment.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for advanced functionality and performance, making this photodiode suitable for a wide range of applications requiring precision sensing.

Size: 1 mm

The small size makes this photodiode suitable for compact designs where space is limited, while still providing reliable and accurate performance.

Peak Wavelength (nm): 420

The peak wavelength of 420 nm makes this photodiode ideal for applications that require sensitivity in the blue spectrum, such as fluorescence detection or laser monitoring.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and low noise characteristics, making them suitable for applications that require high-speed and low-light detection capabilities.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this photodiode can withstand harsh environmental conditions and maintain consistent performance in a wide range of temperature settings.

Minimum Reverse Breakdown Voltage: 24.2 V

The high minimum reverse breakdown voltage ensures reliable and consistent operation under varying reverse bias conditions, enhancing the overall stability and longevity of the photodiode.

Shape: RECTANGULAR

The rectangular shape provides ease of integration into existing optical systems or electronic circuits, allowing for straightforward mounting and connectivity options.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature of -40 °C, this photodiode can function effectively in extremely cold environments without compromising its performance, making it suitable for a diverse range of applications.

Maximum Dark Current: 16 nA

The low maximum dark current of 16 nA ensures minimal noise levels and high signal-to-noise ratio, making this photodiode ideal for low-light and high-precision sensing applications.

Semiconductor Material: Silicon

Silicon-based photodiodes offer high responsivity and low noise characteristics, making them a popular choice for a wide range of optoelectronic applications requiring high detection efficiency and reliability.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation onto PCBs or other flat surfaces, enabling convenient integration into compact electronic devices or systems with minimal space requirements.

Technical Specifications

Photodiodes MICROFC-10020-SMT attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

COMPLEX

Maximum Dark Current:

16 nA

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Semiconductor Material:

Silicon

Shape:

RECTANGULAR

Size:

1 mm

Trade Compliance

MICROFC-10020-SMT Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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