Loading...

MICROFJ-30035-TSV-TR

Onsemi

MICROFJ-30035-TSV-TR by Onsemi

MICROFJ-30035-TSV-TR by Onsemi is a 3.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, has a reverse breakdown voltage of 24.2V, and dark current of 3000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.

Median Price

$19.860

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,246 parts In-Stock

1+ parts

$18.960

100+ parts

$17.080

1k+ parts

$15.750

10k+ parts

$14.490

4,246

$18.960

$17.080

$15.750

$14.490

DigiKey

USA . 2,042 parts In-Stock

1+ parts

$20.760

100+ parts

$17.304

1k+ parts

-

10k+ parts

$14.493

2,042

$20.760

$17.304

-

$14.493

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 51 parts In-Stock

1+ parts

$17.030

100+ parts

-

1k+ parts

-

10k+ parts

-

51

$17.030

-

-

-

Digiode

USA . 2,420 parts In-Stock

1+ parts

$18.696

100+ parts

-

1k+ parts

-

10k+ parts

-

2,420

$18.696

-

-

-

Flip Electronics

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,000

-

-

-

-

Chip Stock

USA . 9,833 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,833

-

-

-

-

Vyrian

USA . 3,168 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,168

-

-

-

-

Electronics Depot

USA . 115 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

115

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 879 parts In-Stock

1+ parts

$0.350

100+ parts

-

1k+ parts

-

10k+ parts

-

879

$0.350

-

-

-

Continental Prestige Electronics

USA . 1,082 parts In-Stock

1+ parts

$16.218

100+ parts

-

1k+ parts

-

10k+ parts

$15.894

1,082

$16.218

-

-

$15.894

Corohmni

South Africa . 349 parts In-Stock

1+ parts

$16.689

100+ parts

-

1k+ parts

-

10k+ parts

-

349

$16.689

-

-

-

Ampacity Inc.

Singapore . 3,516 parts In-Stock

1+ parts

$16.730

100+ parts

-

1k+ parts

-

10k+ parts

-

3,516

$16.730

-

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

$17.030

100+ parts

-

1k+ parts

$16.179

10k+ parts

$15.838

100

$17.030

-

$16.179

$15.838

Corphita

USA . 2,047 parts In-Stock

1+ parts

$17.712

100+ parts

-

1k+ parts

-

10k+ parts

-

2,047

$17.712

-

-

-

Problanco Electronics

Mexico . 6,016 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,016

-

-

-

-

SupplyDigital Components

Austria . 5,154 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,154

-

-

-

-

TANS Electronics

Latvia . 3,789 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,789

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Argo Parts USA

USA . 2,945 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,945

-

-

-

-

Kulean Microsystems

USA . 1,099 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,099

-

-

-

-

UHIMA Technologies

Türkiye . 112 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

112

-

-

-

-

Overview

Discover the superior quality and precision of Onsemi's MICROFJ-30035-TSV-TR photodiode. Designed for a wide range of applications, this avalanche photodiode offers unmatched performance and reliability. With a peak wavelength of 420 nm and a minimum reverse breakdown voltage of 24.2 V, this complex configuration photodiode ensures accurate and efficient light detection. Whether you're in the medical, industrial, or automotive industry, this square-shaped photodiode is the perfect solution for your optoelectronic needs. Trust Onsemi to deliver cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for advanced functionality and performance, making this photodiode suitable for demanding applications.

Size: 3.07 mm

The compact size of the photodiode makes it easy to integrate into various systems and devices without taking up much space.

Peak Wavelength (nm): 420

The peak wavelength of 420nm makes this photodiode ideal for applications that require sensitivity in the blue spectrum, such as UV detection and fluorescence measurements.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and low noise operation, making them well-suited for low-light detection and high-speed applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this photodiode can withstand high-temperature environments, providing reliable performance in various conditions.

Minimum Reverse Breakdown Voltage: 24.2 V

The high reverse breakdown voltage ensures the photodiode can handle higher voltages without breakdown, enhancing its durability and robustness.

Shape: SQUARE

The square shape of the photodiode simplifies its integration into systems, allowing for easy alignment and positioning for optimal performance.

Minimum Operating Temperature: -40 °C

The photodiode can operate in extremely cold temperatures down to -40°C, making it suitable for applications in harsh environmental conditions.

Maximum Dark Current: 3000 nA

The low dark current of 3000nA ensures minimal noise in low-light conditions, making this photodiode ideal for precision measurements and high-sensitivity applications.

Technical Specifications

Photodiodes MICROFJ-30035-TSV-TR attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

COMPLEX

Maximum Dark Current:

3000 nA

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Shape:

SQUARE

Size:

3.07 mm

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19