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SPS501C1

Onsemi

SPS501C1 by Onsemi

SPS501C1 by Onsemi is a photodiode with max operating temp of 70 °C, min of -20°C, and max dark current of 30nA. It has a response time of 0.00000002s and max reverse voltage of 30V. Ideal for applications requiring precise light detection in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 870 parts In-Stock

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Digiode

USA . 759 parts In-Stock

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Kepictronics

USA . 8,956 parts In-Stock

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Kulean Microsystems

USA . 6,049 parts In-Stock

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Problanco Electronics

Mexico . 5,035 parts In-Stock

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TANS Electronics

Latvia . 4,235 parts In-Stock

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Corphita

USA . 2,218 parts In-Stock

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SupplyDigital Components

Austria . 2,113 parts In-Stock

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UHIMA Technologies

Türkiye . 585 parts In-Stock

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Corohmni

South Africa . 420 parts In-Stock

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Overview

Experience the superior quality and performance of the SPS501C1 photodiode by Onsemi. With a trusted manufacturer like Onsemi, you can trust in the reliability and precision of this product. Ideal for a wide range of applications, this photodiode offers unmatched value with its quick response time, low dark current, and high reverse voltage. Whether you're working on industrial automation, medical equipment, or security systems, the SPS501C1 provides the accuracy and consistency you need to excel in your projects. Elevate your designs with the SPS501C1 and see the difference for yourself.

Feature Benefit Bullets

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this photodiode can withstand harsh environmental conditions without compromising its performance.

Minimum Operating Temperature: -20 °C

The photodiode can still function effectively even in low temperatures, making it suitable for a wide range of environments.

Maximum Dark Current: 30 nA

Low dark current ensures minimal noise and accurate signal detection, making this photodiode ideal for high precision applications.

Maximum Response Time: 0.00000002 s

With an incredibly fast response time, this photodiode can capture rapid changes in light intensity with precision, making it suitable for high-speed applications.

Maximum Reverse Voltage: 30 V

The high maximum reverse voltage rating provides protection against reverse bias conditions, ensuring the longevity and reliability of the photodiode.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature makes installation easy and reliable, providing a secure connection that enhances the overall performance of the photodiode.

Technical Specifications

Photodiodes SPS501C1 attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Maximum Dark Current:

30 nA

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Maximum Response Time:

.00000002 s

Maximum Reverse Voltage:

30 V

Sub-Category:

Photo Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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