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MICROFC-10010-SMT

Onsemi

MICROFC-10010-SMT by Onsemi

MICROFC-10010-SMT by Onsemi is a 1mm rectangular avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has min reverse breakdown voltage of 24.2V, and max dark current of 3nA. Ideal for optoelectronic applications requiring surface mount configuration.

Median Price

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Lifecycle Status

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Digiode

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TANS Electronics

Latvia . 3,177 parts In-Stock

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Kulean Microsystems

USA . 2,252 parts In-Stock

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Problanco Electronics

Mexico . 1,077 parts In-Stock

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SupplyDigital Components

Austria . 1,035 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 375 parts In-Stock

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Corohmni

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Overview

Unlock the potential of your optoelectronic projects with the MICROFC-10010-SMT by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their photodiodes. Ideal for applications requiring precise light detection, this avalanche photodiode offers exceptional performance in a compact 1mm size. With a peak wavelength of 420nm, customers can trust in the value and benefits that this product brings, from its high reverse breakdown voltage to its low dark current. Experience the advantages of Onsemi's MICROFC-10010-SMT and take your projects to new heights.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for more advanced functionality and performance compared to simpler configurations.

Size: 1 mm

Compact size makes it suitable for applications where space is limited.

Peak Wavelength (nm): 420

Responsive to light at a specific wavelength, making it ideal for applications requiring detection at 420 nm.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer higher sensitivity and lower noise compared to traditional photodiodes.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for applications with elevated operating conditions.

Minimum Reverse Breakdown Voltage: 24.2 V

Higher reverse breakdown voltage provides better protection against voltage spikes and overloads.

Shape: RECTANGULAR

Rectangular shape allows for easier integration into various systems and configurations.

Minimum Operating Temperature: -40 °C

Capable of operating in low temperature environments, suitable for a wide range of applications.

Maximum Dark Current: 3 nA

Low dark current ensures accurate signal detection even in low light conditions.

Semiconductor Material: Silicon

Silicon photodiodes offer high sensitivity and response time, making them a reliable choice for many applications.

Mounting Feature: SURFACE MOUNT

Surface mount design simplifies the installation process and allows for efficient placement on circuit boards.

Technical Specifications

Photodiodes MICROFC-10010-SMT attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

COMPLEX

Maximum Dark Current:

3 nA

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Semiconductor Material:

Silicon

Shape:

RECTANGULAR

Size:

1 mm

Trade Compliance

MICROFC-10010-SMT Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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