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MICROFC-30050-SMT-TR1

Onsemi

MICROFC-30050-SMT-TR1 by Onsemi

MICROFC-30050-SMT-TR1 by Onsemi is a 3mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 914nA. Ideal for optoelectronic applications requiring surface mount configuration.

Median Price

$46.615

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 117 parts In-Stock

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$46.210

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$38.060

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DigiKey

USA . 1 parts In-Stock

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$47.020

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Digiode

USA . 2,470 parts In-Stock

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$42.874

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Vyrian

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Flip Electronics

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Corphita

USA . 2,371 parts In-Stock

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$40.617

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Corohmni

South Africa . 298 parts In-Stock

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$45.130

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Problanco Electronics

Mexico . 7,635 parts In-Stock

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SupplyDigital Components

Austria . 5,473 parts In-Stock

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Kulean Microsystems

USA . 4,593 parts In-Stock

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TANS Electronics

Latvia . 3,869 parts In-Stock

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UHIMA Technologies

Türkiye . 798 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 90 parts In-Stock

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Overview

Discover the superior quality and precision of the MICROFC-30050-SMT-TR1 by Onsemi, a cutting-edge photodiode that stands out in its category. Manufactured by Onsemi, a trusted leader in the industry, this avalanche photodiode offers unmatched reliability and performance. With a peak wavelength of 420nm and a minimum reverse breakdown voltage of 24.2V, this square-shaped photodiode is ideal for a wide range of applications. From industrial automation to medical equipment, this versatile component provides value and benefits like no other. Experience the advantages of advanced technology with the MICROFC-30050-SMT-TR1.

Feature Benefit Bullets

Configuration: COMPLEX

Complex configuration allows for advanced functionality and precise performance in various applications.

Size: 3 mm

Compact size enables easy integration into different devices and systems.

Peak Wavelength (nm): 420

Peak wavelength of 420nm makes this photodiode suitable for applications requiring sensitivity to blue light.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and low noise characteristics, making them ideal for low light detection applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures the photodiode can withstand demanding environmental conditions.

Minimum Reverse Breakdown Voltage: 24.2 V

High reverse breakdown voltage provides protection against voltage surges and ensures reliable operation.

Shape: SQUARE

Square shape facilitates easy alignment and mounting for accurate optical detection.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows the photodiode to function effectively in cold environments.

Maximum Dark Current: 914 nA

Low dark current results in minimal noise and accurate light measurements in low light conditions.

Packing Method: TR

TR packing method ensures secure and convenient handling during transportation and storage.

Semiconductor Material: Silicon

Silicon semiconductor material offers high sensitivity and reliability for light detection applications.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies installation and allows for space-saving integration in compact devices.

Technical Specifications

Photodiodes MICROFC-30050-SMT-TR1 attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

COMPLEX

Maximum Dark Current:

914 nA

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Semiconductor Material:

Silicon

Shape:

SQUARE

Size:

3 mm

Trade Compliance

MICROFC-30050-SMT-TR1 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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