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MICROFJ-60035-TSV-TR1

Onsemi

MICROFJ-60035-TSV-TR1 by Onsemi

MICROFJ-60035-TSV-TR1 by Onsemi is a 6.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40°C to 85°C, has a min reverse breakdown voltage of 24.2V, and a max dark current of 12000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in detecting light signals.

Median Price

$84.745

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Mouser Electronics

USA . 156 parts In-Stock

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$81.550

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$74.090

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DigiKey

USA . 50 parts In-Stock

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$87.940

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$72.629

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$87.940

$72.629

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Nova Conductors

Japan . 27 parts In-Stock

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$75.680

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Digiode

USA . 2,462 parts In-Stock

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$76.048

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Vyrian

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AZTECH Wire

Italy . 875 parts In-Stock

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$11.976

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$11.976

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Ampacity Inc.

Singapore . 95 parts In-Stock

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$68.010

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$68.010

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Corphita

USA . 2,322 parts In-Stock

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$72.045

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Corohmni

South Africa . 444 parts In-Stock

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$74.166

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Netroflash

USA . 1,000 parts In-Stock

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$75.680

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Continental Prestige Electronics

USA . 5 parts In-Stock

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$77.710

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Kulean Microsystems

USA . 7,219 parts In-Stock

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SupplyDigital Components

Austria . 6,361 parts In-Stock

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Problanco Electronics

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TANS Electronics

Latvia . 5,117 parts In-Stock

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Argo Parts USA

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 434 parts In-Stock

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Perfect Parts

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Overview

Unleash the power of cutting-edge technology with the MICROFJ-60035-TSV-TR1 photodiode by Onsemi. Crafted with precision and expertise, this avalanche photodiode offers unrivaled quality and reliability. From industrial automation to medical devices, this tiny yet powerful sensor is versatile enough to cater to a wide range of applications. Experience enhanced performance and accuracy with a product that delivers exceptional value, benefits, and advantages to every customer. Choose Onsemi for uncompromising quality and innovation.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for advanced functionality and customization, making this photodiode suitable for sophisticated applications.

Size: 6.07 mm

The compact size makes it easy to integrate this photodiode into various devices without taking up much space.

Peak Wavelength (nm): 420

The peak wavelength of 420nm makes this photodiode ideal for applications that require sensitivity in the blue spectrum of light.

Optoelectronic Type: AVALANCHE PHOTODIODE

The avalanche photodiode type offers high sensitivity and fast response times, making it suitable for applications where rapid detection is crucial.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this photodiode can withstand high temperatures, making it suitable for harsh environments.

Minimum Reverse Breakdown Voltage: 24.2 V

The high minimum reverse breakdown voltage of 24.2V ensures reliable performance and protection against overvoltage conditions.

Shape: SQUARE

The square shape of this photodiode allows for easy alignment and installation in systems that require precise positioning.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures that this photodiode can perform reliably even in cold environments.

Maximum Dark Current: 12000 nA

The low maximum dark current of 12000nA indicates that this photodiode has minimal noise and can provide accurate measurements even in low light conditions.

Technical Specifications

Photodiodes MICROFJ-60035-TSV-TR1 attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

COMPLEX

Maximum Dark Current:

12000 nA

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Shape:

SQUARE

Size:

6.07 mm

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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