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BP104F

Infineon Technologies

BP104F by Infineon Technologies

Infineon Technologies' BP104F is a PIN photodiode with max. operating temp of 80°C and min. of -40°C. Featuring max. dark current of 30nA, response time of 0.00000002s, and max. reverse voltage of 20V, it's ideal for optoelectronic applications requiring precise light detection in various environments.

Median Price

$0.663

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Bürklin Elektronik

Germany . 226 parts In-Stock

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$0.580

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$0.375

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Element14

Singapore . 780 parts In-Stock

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$0.746

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$0.497

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$0.419

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$0.497

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Distributors (In-Stock)

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Nova Conductors

Japan . 650 parts In-Stock

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$0.450

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$0.450

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Digiode

USA . 345 parts In-Stock

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$0.551

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$0.551

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VNN

France . 2,815 parts In-Stock

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Vyrian

USA . 406 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 200 parts In-Stock

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ComSIT USA

USA . 200 parts In-Stock

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Modulus Dynamics

Lithuania . 3,724 parts In-Stock

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$0.200

100+ parts

$0.192

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$0.184

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Continental Prestige Electronics

USA . 3,263 parts In-Stock

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$0.450

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$0.441

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Argo Parts USA

USA . 742 parts In-Stock

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$0.450

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$0.436

742

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Bastille Electronics

Australia . 450 parts In-Stock

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$0.450

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$0.428

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$0.406

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$0.400

450

$0.450

$0.428

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$0.400

Ampacity Inc.

Singapore . 472 parts In-Stock

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$0.493

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Corphita

USA . 130 parts In-Stock

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Kepictronics

USA . 10,880 parts In-Stock

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Metaverse IC Inc.

Canada . 10,880 parts In-Stock

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Perfect Parts

USA . 7,439 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 184 parts In-Stock

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Overview

Experience the superior quality of the BP104F photodiode by Infineon Technologies, a leading manufacturer in the industry. With applications ranging from light sensors to medical instruments, this PIN photodiode offers unmatched precision and reliability. Its wide operating temperature range and fast response time make it ideal for various projects. Trust in the value and benefits that the BP104F provides, delivering exceptional performance and accuracy for all your optoelectronic needs.

Feature Benefit Bullets

Optoelectronic Type: PIN PHOTODIODE

PIN photodiodes are known for their high speed and low noise characteristics, making this product suitable for applications requiring fast response times and accurate detection of low light levels.

Maximum Operating Temperature: 80 °C

With a high maximum operating temperature, this photodiode can withstand a wide range of environmental conditions, making it suitable for use in various industrial and outdoor applications.

Minimum Operating Temperature: -40 °C

The wide operating temperature range allows this photodiode to function effectively in extreme cold conditions, providing reliable performance in harsh environments.

Maximum Dark Current: 30 nA

The low dark current ensures that the photodiode maintains a high signal-to-noise ratio, leading to accurate and precise measurements even in low light conditions.

Maximum Response Time: 0.00000002 s

The ultra-fast response time of this photodiode enables it to quickly and accurately capture changes in light intensity, making it ideal for applications requiring rapid detection and measurement.

Maximum Reverse Voltage: 20 V

The high reverse voltage rating provides protection against voltage spikes, ensuring the reliability and longevity of the photodiode in high-voltage applications.

Semiconductor Material: Silicon

Silicon photodiodes offer high sensitivity to a wide range of wavelengths, making them versatile and suitable for various applications such as optical communications, medical devices, and industrial sensors.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and ensures secure and stable placement of the photodiode, making it easy to integrate into different electronic systems and devices.

Technical Specifications

Photodiodes BP104F attributes and parameters. Explore more Photodiodes devices from Infineon Technologies

Specs

Maximum Dark Current:

30 nA

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Maximum Response Time:

.00000002 s

Maximum Reverse Voltage:

20 V

Semiconductor Material:

Silicon

Sub-Category:

Photo Diodes

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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