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MICROFR-10010-MLP-TA

Onsemi

MICROFR-10010-MLP-TA by Onsemi

MICROFR-10010-MLP-TA by Onsemi is a single avalanche photodiode with a peak wavelength of 635nm. It operates b/w -40 to 85 °C, has a min reverse breakdown voltage of 24.25V, and max dark current of 6nA. Ideal for surface mount applications in optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,026 parts In-Stock

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Digiode

USA . 775 parts In-Stock

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Kulean Microsystems

USA . 6,584 parts In-Stock

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SupplyDigital Components

Austria . 6,507 parts In-Stock

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Corphita

USA . 755 parts In-Stock

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UHIMA Technologies

Türkiye . 743 parts In-Stock

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TANS Electronics

Latvia . 526 parts In-Stock

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Corohmni

South Africa . 389 parts In-Stock

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Problanco Electronics

Mexico . 111 parts In-Stock

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Overview

Enhance your optical sensing applications with the MICROFR-10010-MLP-TA photodiode by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in every product they offer. This avalanche photodiode boasts a peak wavelength of 635nm and operates flawlessly in temperatures ranging from -40 to 85 °C. With a low dark current of 6nA and a minimum reverse breakdown voltage of 24.25V, this photodiode is perfect for precise light detection in various applications. Trust Onsemi to deliver exceptional performance and value with the MICROFR-10010-MLP-TA.

Feature Benefit Bullets

Configuration: SINGLE

Having a single configuration simplifies the setup and operation of the photodiode, making it easier to use in various applications.

Size: 1 mm

Compact size allows for easy integration into smaller devices or systems without taking up much space.

Peak Wavelength (nm): 635

Specific peak wavelength of 635 nm makes this photodiode suitable for applications requiring precise detection or response to light at that wavelength.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer higher sensitivity and faster response times compared to traditional photodiodes, making them ideal for applications requiring high performance.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows this photodiode to withstand a wide range of environmental conditions, making it suitable for use in both indoor and outdoor settings.

Minimum Reverse Breakdown Voltage: 24.25 V

Having a relatively high minimum reverse breakdown voltage ensures the photodiode can handle higher voltages without failure, increasing its reliability and durability.

Shape: SQUARE

Square shape simplifies mounting and alignment of the photodiode, making it easier to integrate into various systems or devices.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows this photodiode to function reliably in cold environments, expanding its potential use cases in different settings.

Maximum Dark Current: 6 nA

Low maximum dark current ensures minimal noise in the photodiode signal, improving the accuracy and reliability of light detection in various applications.

Packing Method: TAPE

Tape packing method facilitates automated assembly processes, streamlining production and reducing the risk of damage during handling or transportation.

Mounting Feature: SURFACE MOUNT

Surface mount option simplifies installation and allows for secure attachment to circuit boards or other surfaces, enhancing the photodiode's usability in different electronic devices.

Technical Specifications

Photodiodes MICROFR-10010-MLP-TA attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

6 nA

Infrared (IR) Range:

NO

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TAPE

Peak Wavelength (nm):

635

Minimum Reverse Breakdown Voltage:

24.25 V

Shape:

SQUARE

Size:

1 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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