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MICROFJ-30035-TSV-TR1

Onsemi

MICROFJ-30035-TSV-TR1 by Onsemi

MICROFJ-30035-TSV-TR1 by Onsemi is a 3.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40°C to 85°C, has a min reverse breakdown voltage of 24.2V, and a max dark current of 3000nA. Ideal for applications requiring high sensitivity in optoelectronic systems.

Median Price

$55.990

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 27 parts In-Stock

1+ parts

$51.680

100+ parts

$44.750

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27

$51.680

$44.750

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DigiKey

USA . 49 parts In-Stock

1+ parts

$55.990

100+ parts

$45.645

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49

$55.990

$45.645

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RS (Exports)

UK . 19 parts In-Stock

1+ parts

$61.447

100+ parts

$55.303

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19

$61.447

$55.303

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Distributors (In-Stock)

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Nova Conductors

Japan . 47 parts In-Stock

1+ parts

$48.900

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47

$48.900

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Digiode

USA . 954 parts In-Stock

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$53.190

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954

$53.190

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Vyrian

USA . 5,630 parts In-Stock

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5,630

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Flip Electronics

USA . 2,692 parts In-Stock

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2,692

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,141 parts In-Stock

1+ parts

$0.410

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1,141

$0.410

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AZTECH Wire

Italy . 498 parts In-Stock

1+ parts

$7.819

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498

$7.819

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Ampacity Inc.

Singapore . 35 parts In-Stock

1+ parts

$47.590

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35

$47.590

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Continental Prestige Electronics

USA . 5,378 parts In-Stock

1+ parts

$47.745

100+ parts

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$46.790

5,378

$47.745

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$46.790

Corohmni

South Africa . 196 parts In-Stock

1+ parts

$47.922

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196

$47.922

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Allen Electronics Distributors

USA . 19 parts In-Stock

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$48.410

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19

$48.410

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Netroflash

USA . 100 parts In-Stock

1+ parts

$48.900

100+ parts

$47.922

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100

$48.900

$47.922

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Corphita

USA . 730 parts In-Stock

1+ parts

$50.391

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730

$50.391

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Lixinc

USA . 11,670 parts In-Stock

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11,670

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Problanco Electronics

Mexico . 6,795 parts In-Stock

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6,795

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Kulean Microsystems

USA . 5,186 parts In-Stock

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5,186

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TANS Electronics

Latvia . 4,489 parts In-Stock

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4,489

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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SupplyDigital Components

Austria . 2,405 parts In-Stock

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2,405

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Argo Parts USA

USA . 726 parts In-Stock

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726

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UHIMA Technologies

Türkiye . 495 parts In-Stock

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495

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Perfect Parts

USA . 45 parts In-Stock

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45

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Overview

Discover the unparalleled quality and reliability of the MICROFJ-30035-TSV-TR1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers photodiodes that set the standard for performance and precision. Ideal for applications requiring sensitive light detection, this avalanche photodiode offers unmatched sensitivity and accuracy. From medical devices to industrial automation, the MICROFJ-30035-TSV-TR1 provides exceptional value and benefits for customers seeking top-notch optoelectronic components. Trust Onsemi to provide cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for advanced performance and functionality compared to simpler photodiode designs.

Size: 3.07 mm

The compact size makes it suitable for applications where space is limited.

Peak Wavelength (nm): 420

The peak wavelength of 420 nm makes this photodiode ideal for applications that require sensitivity in the blue light spectrum.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer higher sensitivity and lower noise compared to traditional photodiodes, making them suitable for low light detection applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this photodiode can be used in a wide range of environments without degradation in performance.

Minimum Reverse Breakdown Voltage: 24.2 V

The high reverse breakdown voltage ensures the photodiode can handle higher voltages without damage, increasing its durability and reliability.

Shape: SQUARE

The square shape allows for easier integration into systems and provides a more uniform light collection area.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this photodiode can function reliably in extreme cold environments.

Maximum Dark Current: 3000 nA

The low maximum dark current of 3000 nA ensures minimal noise and accurate detection of low light levels.

Technical Specifications

Photodiodes MICROFJ-30035-TSV-TR1 attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

COMPLEX

Maximum Dark Current:

3000 nA

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Shape:

SQUARE

Size:

3.07 mm

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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