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MBRS3200T3G

Onsemi

MBRS3200T3G by Onsemi

MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.

Median Price

$0.219

Lifecycle Status

Suppliers In-Stock

52

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 48,318 parts In-Stock

1+ parts

$0.900

100+ parts

$0.362

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$0.258

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$0.258

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EBV Elektronik

Germany . 1,622,500 parts In-Stock

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Canada . 195,000 parts In-Stock

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Newark

USA . 112,500 parts In-Stock

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Arrow

USA . 107,500 parts In-Stock

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Verical

USA . 107,500 parts In-Stock

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Chip1Stop

Japan . 55,000 parts In-Stock

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Master Electronics

USA . 22,240 parts In-Stock

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Rochester

USA . 20,585 parts In-Stock

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Farnell

UK . 20,425 parts In-Stock

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Element14

Singapore . 20,425 parts In-Stock

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DigiKey

USA . 20,338 parts In-Stock

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UK . 4,630 parts In-Stock

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Digiode

USA . 1,391 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Component Electronics Inc.

Canada . 4,700 parts In-Stock

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Voyager Components

USA . 90 parts In-Stock

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90

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TME

Poland . 2,028 parts In-Stock

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$0.218

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2,028

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Mobius Materials

USA . 1,031 parts In-Stock

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Maritex

Poland . 19 parts In-Stock

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IBS Electronics

USA . 5,624,375 parts In-Stock

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NAC Semi

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Sensible Micro Corp

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Electro Sonic

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Component Sense

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Tectiva GmbH

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Cyclops Electronics Ltd

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Infinite Electronics LLP

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Diverse Electronics

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Kronex Distribution GmbH

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Holdelec - ElecDif-Pro

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LittleDiode

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Aztec Data Supply Inc.

USA . 4,698 parts In-Stock

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Ampacity Inc.

Singapore . 57,858 parts In-Stock

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Semicontronic

India . 56,907 parts In-Stock

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Corohmni

South Africa . 97 parts In-Stock

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Corphita

USA . 2,484 parts In-Stock

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Decca Corp

Germany . 57,211 parts In-Stock

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Continental Prestige Electronics

USA . 1,720 parts In-Stock

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Argo Parts USA

USA . 604 parts In-Stock

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Modulus Dynamics

Lithuania . 18,331 parts In-Stock

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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Perfect Parts

USA . 3,809,958 parts In-Stock

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RC Electronics

USA . 87,021 parts In-Stock

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$0.320

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$0.280

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Formix International (Excess)

India . 46,251 parts In-Stock

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GreenTree Electronics

Israel . 40,000 parts In-Stock

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Brazil . 12,280 parts In-Stock

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Lucentia Tech

USA . 12,280 parts In-Stock

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S.R.D Solutions

India . 11,756 parts In-Stock

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Latvia . 7,230 parts In-Stock

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iodParts Technologies Inc.

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Netroflash

USA . 1,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 846 parts In-Stock

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Austria . 714 parts In-Stock

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Türkiye . 279 parts In-Stock

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Overview

Discover the MBRS3200T3G by Onsemi, a top-of-the-line rectifier diode designed for power applications. Manufactured with precision and expertise by Onsemi, this diode offers unparalleled quality and reliability. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 200V, this diode is perfect for a wide range of power-related tasks. Its Schottky technology ensures efficiency and durability, while its small outline package makes it easy to integrate into any project. Trust in Onsemi's reputation for excellence and choose the MBRS3200T3G for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and facilitating automated assembly processes.

Maximum Operating Temperature: 175 °C

Ensures reliable performance even in high-temperature environments.

Diode Type: RECTIFIER DIODE

Designed specifically for rectifying alternating current, making it ideal for power applications.

Maximum Forward Voltage (VF): 0.59 V

Low forward voltage drop helps in reducing power loss and increasing efficiency.

Maximum Output Current: 3 A

Capable of handling high current loads, suitable for power applications.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage drop, making them efficient for power applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

Suitable for applications requiring high reverse voltage protection.

Diode Element Material: SILICON

Provides good electrical conductivity and performance characteristics for the diode.

Technical Specifications

Diodes & Rectifiers MBRS3200T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.59 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRS3200T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-601-3889, 5961016013889

NIIN

016013889

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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